PHOTOMULTlPLlER TUBES
S-1 Spectral Response(QE 0.05% at 1.06
m <R632-01>)
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter
Value
Description/Value
Unit
Spectral Response
400 to 1200
nm
Wavelength of Maximum Response
800
nm
Photocathode
MateriaI
Ag O Cs
Structure
Number of Stages
Minimum Effective Area
15
mm dia.
Window Material
Borosilicate glass
Dynode
Base
SuitabIe Socket
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1500
250
Average Anode Current
Ambient Temperature
-80 to +50
0.01
Unit
Vdc
Vdc
mA
Linear focused
10
12 pin glass base
E678 12L(supplied)
19mm(3/4 Inch) Diameter, 10stage, HeadOn Type
R632, R632- 01
CHARACTERISTlCS (at 25 )
Parameter
Max.
Typ.
Min.
Cathode
Sensitivity
Sensitivity
Gain
Anode Dark Current(at 4A/lm)
5
0.05
0.02
0.14
%
%
Luminous(2856K)
10
Radiant at 800nm
Red/White Ratio
R632
R632 01
R632
R632 01
R632
150
R632 01
800
500
2000
(with Toshiba IR D80A)
Quantum Efficiency
at 1.06 m
Luminous(2856K)
10
0.1
A/lm
Radiant at 800nm
950
A/W
5
1 0
5
Anode Pulse Rise Time
2.2
ns
nA
nA
Electron Transit Time
20
Time Response
Electrode
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Ratio
1.5
1
1
1
1
1
1
1
1
1
1
Anode characteristics are measured with the voItage distribution ratio shown below.
SuppIy Voltage : 1250Vdc, K:Cathode, Dy:Dynode, P:Anode
NOTE:
Anode
25
1.9
Unit
A/lm
mA/W
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
ns
lnformation furnished by HA MAM ATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or commission. Specifications are
subjected to change without notice. No patent right are granted to any of the circuits described herein.
1996 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
PHOTOMULTlPLlER TUBES R632, R63201
Figure 1: Typical Spectral Response
Figure 2: Typical Gain and Anode Dark Current
Figure 3: Typical Temperature Characteristics
of Dark Current
Figure 4: Dimensional Outline and Basing Diagram
(Unit : mm)
BOTTOM VIEW
(BASING DIAGRAM)
Socket
(E678 12L)
TPMHB0356EA
200
1000
400
600
0.01
100
0.1
1
10
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
R632-01
R632
800
TPMHB0357EA
500
600
700
800
1000
1500
10
0
10
1
10
3
10
4
10
6
10
7
SUPPLY VOLTAGE (V)
GAIN
10
2
10
5
10
-10
10
-9
10
-7
10
-6
10
-4
10
-3
10
-8
10
-5
ANODE DARK CURRENT (A)
GAIN
R632
DARK
CURRE
NT
R632-01
DARK
CUR
RE
NT
TPMHB0358EA
-40
30
AMBIENT TEMPERATURE (
C)
ANODE DARK CURRENT (A)
10-
12
10-
11
10-
9
10-
8
10-
6
10-
5
10-
10
10-
7
-30
-20
-10
0
10
20
TUBE TYPE: R632-01
TPMHA0360EA
TACCA0047EA
FACEPLATE
18.6 0.7
15MIN.
PHOTOCATHODE
13MAX.
88 2
12 PIN BASE
DY3
DY5
DY7
DY9
P
SHORT PIN
1
2
3
4
5
6
7
8
9
10
11
12
DY10
DY8
DY6
DY4
DY2
K
DY1
35
360
13
2 3.2
3.7
(23.6)
9
6.7
28.6
13
18
13
18
2
9.5
3.3
10.5
(8)
7
2
2-R4
TPMH1142E01
FEB. 1996
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
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North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
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