High Sensitivity with Low Noise Photocathode
PHOTOMULTlPLlER TUBES
R7518
R7518P
(For Photon Counting)
Figure 1: Typical Spectral Response
TPMSB0177EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1998 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
PRELIMINARY DATA
NOV. 1998
FEATURES
Spectral Response ......................................
High Cathode Sensitivity
APPLICATIONS
Chemiluminescence Detection
Bioluminescence Detection
Fluorescence Spectrometer
SO
2
Monitor (UV Fluorescence)
Luminous .................................................. ....
Radiant at 410nm ............................................
High Anode Sensitivity (at 1000V)
Low Dark Current .......................................................
Luminous ................................................... ....
Radiant at 410nm ....................................
185 to 730 nm
0.2nA
Low Dark Counts (R7518P) ...................................... 10 cps
130
A/lm
85 mA/W
1560 A/lm
10.2
10
5
A/W
GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
185 to 730
nm
nm
Photocathode
MateriaI
410
Structure
4
pF
Anode to Last Dynode
6
pF
Anode to All Other Electrodes
Minimum Effective Area
Low noise bialkali
Secondary Emitting Surface
Low noise bialkali
mm
Window Material
Weight
8
24
g
45
Dynode
Direct Interelectrode Capacitances
Base
SuitabIe Socket Assembly
UV glass
Circular-cage
Number of Stages
9
11-pin base
JEDEC No. B11-88
E71721 (option)
SuitabIe Socket
E67811A (option)
0.01
0.1
100
1000
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
10
1
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter
Min.
Typ.
R7518 for General Purpose
Max.
Unit
Value
Supply Voltage
Cathode Sensitivity
Anode Sensitivity
Gain
E
Anode Dark Current
F
(After 30 minutes Storage in the darkness)
Anode Dark Counts
F
ENI (Equivalent Noise Input)
G
Time Response
E
Anode Current Stability
K
Quantum Efficiency at 300nm (Peak)
Luminous
B
Radiant at 410nm (Peak)
Blue
C
Luminous
D
Radiant at 400nm
Anode Pulse Rise Time
H
Electron Transit Time
Transit Time Spread (TTS)
J
Light Hysteresis
Voltage Hysteresis
--
120
--
--
1200
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2.0
--
--
--
--
--
--
--
%
A/lm
mA/W
A/lm-b
A/lm
A/W
--
nA
cps
W
ns
ns
ns
%
%
29
130
85
10
1560
10.2
10
5
1.2
10
7
0.2
--
2.7
10
-17
2.2
22
1.2
0.1
1.0
Min.
Typ.
R7518P for Photon Counting
Max.
--
120
--
--
1200
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.5
50
--
--
--
--
--
--
29
130
85
10
1560
10.2
10
5
1.2
10
7
0.2
10
2.7
10
-17
2.2
22
1.2
0.1
1.0
Between Anode and Cathode
Between Anode and Last Dynode
1250
250
0.1
Vdc
Vdc
mA
Average Anode Current
A
Unit
CHARACTERISTlCS (at 25
C)
PHOTOMULTlPLlER TUBES R7518, R7518P (For Photon Counting)
NOTES
A:
B:
C:
D:
E:
F:
G:
H:
J:
Averaged over any interval of 30 seconds maximum.
The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856K. Supply voltage is 150 volts between the cathode and all
other electrodes connected together as anode.
The value is cathode output current when a blue filter(Corning CS-5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
Measured with the same light source as Note B and with the anode-to-
cathode supply voltage and voltage distribution ratio shown in Table 1 be-
low.
Measured with the same supply voltage and voltage distribution ratio as
Note D after removal of light.
Measured at the voltage producing the gain of 1 10
6
.
ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
where q = Electronic charge (1.60 10
-19
coulomb).
ldb = Anode dark current(after 30 minute storage) in amperes.
G = Gain.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photo-
cathode is illuminated.
K:
L:
Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
Hysteresis is temporary instability in anode current after light and voltage
are applied.
ENI =
S
2q.ldb.G. f
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000Vdc
K : Cathode, Dy : Dynode, P : Anode
Table 1:Voltage Distribution Ratio
Hysteresis =
100(%)
lmax.
li
lmin.
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-ampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
TPMSB0002EA
TIME
max.
l
min.
l
i
l
ANODE
CURRENT
0
5
6
7 (minutes)
Figure 2: Typical Gain and Anode Dark Current
Figure 3: Typical Time Response
Figure 5: Typical Single Photon Pulse Height
Distribution for R7518P
Figure 6: Typical Temperature Characteristics
of Dark Count for R7518P
Figure 4: Typical ENI vs. Wavelength
TPMSB0011EA
TPMSB0004EB
TPMSB0178EA
TPMSB0179EA
TPMSB0015EA
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
TIME (ns)
1
2
4
6
8
10
20
40
60
80
100
RISE TIME
TRANSIT TIME
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
10-
17
10-
16
10-
15
10-
14
10-
13
EQUIVALENT NOISE INPUT (W)
10-
1
-20
0
+20
+40
+60
TEMPERATURE (
C)
DARK COUNT (cps)
10
0
10
1
10
2
10
3
10
4
10-
5
10-
10
10-
11
10-
12
300
400
500
600
800
1000
1500
SUPPLY VOLTAGE (V)
ANODE DARK CURRENT (A)
10-
9
10-
8
10-
7
10-
6
GAIN
10
8
10
3
10
2
10
1
10
4
10
5
10
6
10
7
GAIN
ANODE DARK CURRENT
1.0
0.8
0.2
0
200
400
600
800
1000
CHANNEL NUMBER (CH)
COUNT PER CHANNEL
0.4
0.6
FULL SCALE 10
4
(PHOTON+DARK)
FULL SCALE 10
3
(DARK)
PHOTON+DARK
DARK
WAVELENGTH OF INCIDENT LIGHT: 450 (nm)
SUPPLY VOLTAGE
LOWER LEVEL DISCRI.
PHOTON + DARK COUNT
DARK COUNT
AMBIENT TEMPERATURE
: 722 (V)
: 67 (ch)
: 6021 (cps)
: 10 (cps)
: 25 (
C)
LOWER LEVEL DISCRI.
PHOTOMULTlPLlER TUBES R7518, R7518P (For Photon Counting)
TPMS1060E01
NOV. 1998
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 8: Socket E678-11A (Option)
Figure 9: D Type Socket Assembly E717-21 (Option)
WarningPersonal Safety Hazards
Electrical ShockOperating voltages applied to this
device present a shock hazard.
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series
DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0002ED
TPMSA0001EA
TACCA0064EA
Bottom View
(Basing Diagram)
POTTING
COMPOUND
R to R10
C1 to C3
: 330k
: 0.01
F
3.5
33.0
0.3
49.0
0.3
29
38.0
0.3
4.8
41
0.5
450
10
5
31.0
0.5
HOUSING
(INSULATOR)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
C3
C2
C1
SIGNAL GND
SIGNAL OUTPUT RG-174/U
(BLACK)
-HV
AWG22 (VIOLET)
P
K
10
POWER SUPPLY GND
AWG22 (BLACK)
SOCKET
PIN No.
PMT
9
8
7
6
5
4
3
2
1
11
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
1
2
4
3
5
7
6
8
9
10
K
DY1
DY2
DY3
DY4
DY5
DY6
DY7
DY8
DY9
P
DIRECTION OF LIGHT
28.5
1.5
8MIN.
PHOTOCATHODE
24MIN.
49.0
2.5
80MAX.
94MAX.
11
32.2
0.5
11 PIN BASE
JEDEC No. B11-88
33
5
49
3.5
38
29
4
18
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