PHOTOMULTlPLlER TUBES
UV to Near IR (R63610:185 to 930 nm, R75810:160 to 930nm) Spectral Response
GENERAL
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Parameter
Value
R63610
R75810
Unit
Spectral Response
185 to 930
160 to 930
nm
Wavelength of Maximum Response
300 to 800
nm
Photocathode
MateriaI
GaAs (Cs)
Structure
Number of Stages
Minimum Effective Area
3
12
mm
pF
pF
Window Material
UV glass
Fused silica glass
Dynode
Direct Interelectrode
Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1500
Average Anode Current
0.001
250
Unit
Vdc
Vdc
mA
Circularcage
9
4
6
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
R63610, R75810
CHARACTERISTlCS (at 25 )
Parameter
Max.
Typ.
Min.
Cathode Sensitivity
Anode Dark Current at 10A/lm
0.1
nA
Luminous(2856K)
400
at 350nm
at 632.8nm
at 852.1nm
Radiant
Red/White Ratio (with R68 filter)
100
63
48
0.53
250
A/lm
Luminous(2856K)
Radiant
4 . 5
1 0
5
A/W
2 . 8 1 0
4
Anode Pulse Rise Time
2
2
ns
Electron Transit Time
550
Time Response
Electrodes
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
P
Ratio
1
1
1
1
1
1
1
1
1
1
Anode characteristics are measured with the voItage distribution ratio shown below.
After 30min. storage in darkness
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
NOTE:
Anode Sensitivity
20
62
Unit
A/lm
mA/W
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Gain
Base
SuitabIe Socket
JEDEC No.B1188
E67811A(option)
ns
2 . 8 1 0
4
2 . 2 1 0
4
at 350nm
at 632.8nm
at 852.1nm
lnformation furnished by HA MAM ATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
1994 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
PHOTOMULTlPLlER TUBES R63610, R75810
Figure 1: Typical Spectral Response
Figure 2: Typical Anode Sensitivity and
Typical Gain
Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)
BOTTOM VIEW
(BASING DIAGRAM)
Socket
(E678 11A)
TPMSB0069EA
TPMSB0070EB
200
400
600
800
1000
0.01
0.1
1
10
100
WAVELENGTH(nm)
CATHODE RADIANT SENSITIVITY(mA/W)
QUANTUM EFFICIENCY(%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
R758-10
R636-10
R758-10
R636-10
500
700
1000
1500
10-
3
10-
2
10-
1
10
0
10
1
10
2
10
3
SUPPLY VOLTAGE(V)
GAIN
ANODE LUMINOUS SENSITIVITY(A/lm)
10
1
10
2
10
3
10
4
10
5
10
6
10
7
ANODE LUMINOUS SENSITIVITY (TYP.)
GAIN (TYP.)
TPMSA0027EC
TACCA0008EA
1
2
4
3
5
7
6
8
9
10
K
DY1
DY2
DY3
DY4
DY5
DY6
DY7
DY8
DY9
P
DIRECTION
OF LIGHT
11
8MIN.
PHOTOCATHODE
12MIN.
80MAX.
94MAX.
49.0 2.5
11 PIN BASE
JEDEC No. B11-88
HA COATING
34MAX.
16MIN.
3MIN.
49
38
29
3.5
33
5
18
4
TPMS1016E03
JUN. 1994
29.0 1.7
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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