FEATURES

GENERAL

NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.

POSITION SENSITIVE
PHOTOMULTIPLIER TUBES

R8520-00-C12
R8520U-00-C12

I 6 (X) + 6 (Y) Cross Plate Anode

I Flangeless Type

I High Speed Response

APPLICATIONS

I PET (Positron Emission Tomography)

I Compact Gamma Camera

I Scintillation Mammography

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

CHARACTERISTICS (at 25

°C)

MAXIMUM RATINGS (Absolute Maximum Values)

0.5

1.5

Dy2

Dy1

Dy3

Dy4

Dy5

Dy6

Dy7

Dy8

Dy9

Dy10 Dy11

Supply Voltage: 800 V dc, K: Cathode, G: Grid, Dy: Dynode, P: Anode

VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE

Electrodes

Ratio

0.5

PRELIMINARY DATA

OCT. 2001

Parameter

Spectral Response

Wavelength of Maximum Response

Photocathode

Window Material

Dynode

Anode

Weight

Suitable Socket

300 to 650

420

Bialkali

× 22

Borosilicate glass

Metal channel dynode

6 (X) + 6 (Y) Cross plate anode

Approx. 28

E678-32B (sold separately)

Material

Minimum Effective Area

Structure

Number of Stages

Description

Unit

Parameter

Cathode Sensitivity

Anode Sensitivity

Gain

Anode Dark Current in Total of Anodes

(after 30 min storage in darkness)

Time Response

8.5

× 10

1.4

µA/lm

A/lm

Luminous (2856 K)

Blue Sensitivity Index (CS 5-58)

Luminous (2856 K)

Anode Pulse Rise Time

Typ.

Min.

Max.

Unit

Parameter

Supply Voltage

Average Anode Current in Total

1000

0.1

V dc

Between Anode and Cathode

Value

Unit

POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12

Figure 2: Typical Gain and Anode Dark Current

TPMHB0671EA

Figure 1: Typical Spectral Response

TPMHB0670EA

400

600

1000

800

SUPPLY VOLTAGE (V)

GAIN

ANODE DARK CURRENT (A)

-11

-10

-9

-8

-7

-6

-5

-4

GAIN

ANODE DARK CURRENT
IN TOTAL OF ANODES

Figure 4: Position Response Using PX-anodes

TPMHB0673EA

Figure 3: Pulse Height Distribution

TPMHB0672EA

WAVELENGTH (nm)

100

200

300

400

500

600

700

800

900

0.01

0.1

100

CATHODE RADIANT SENSITIVITY (mA/W)

QUANTUM EFFICIENCY (%)

QUANTUM
EFFICIENCY

CATHODE
RADIANT
SENSITIVITY

100

ADC CHANNEL

RELATIVE COUNTS

200

300

400

500

600

700

800

900

1000

SUPPLY VOLTAGE
CRYSTAL
SOURCE
P.H.R.

: -800 V
: 1" CUBE Nal (Tl)
:

Co (122 keV)

: 16.9 %

-10

-15

200

400

600

800

1000

1200

INCIDENT POSITION (mm)

CALCULATED POSITION (channel)

-5

SUPPLY VOLTAGE
LIGHT SOURCE

A STEP OF SCANNING

: -800 V
: 2 mm

× 2 mm × 20 mm BGO CRYSTAL

(irradiated by

137

Cs)

: 0.5 mm

TPMHB0675EA

Figure 5: Spatial Resolution

X-Axis

Y-Axis

TPMHB0674EA

Figure 6: Circuit Diagram Example and Positioning Histogram

TPMHC0205EA

POSITION (mm)

RELATIVE OUTPUT (%)

100

SUPPLY VOLTAGE
LIGHT SOURCE
SPOT DIAMETER

: -800 V
: W-LAMP
: 1 mm

PX4

PX5

PX6

PX3

PX2

PX1

* Output of each anode under a light spot scanning at a center.

Positioning histogram of a 10

× 10 array of

2.0 mm

× 2.0 mm × 20 mm GSO elements

for 511 keV

-rays.

(crystal pitch is 2.2 mm)

POSITION (mm)

RELATIVE OUTPUT (%)

100

SUPPLY VOLTAGE
LIGHT SOURCE
SPOT DIAMETER

: -800 V
: W-LAMP
: 1 mm

PY4

PY5

PY6

PY3

PY2

PY1

Sum

EVENT SIGNAL

X ADDRESS

Y ADDRESS

PX6

PX5

PX4

PX1

PY6

PY3

PY2

PY1

× 10 GSO ARRAY

R8520-00-C12

PX3

PX2

A/D

INTEGRATION

TIMING PICK-OFF

and

ENERGY WINDOW

PY5

PY4

Xa + Xb

Yc + Yd

Figure 7: R8520-00-C12 Dimensional Outline and Basing Diagram (Unit: mm)

Figure 8: R8520U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm)
(R8520-00-C12 with an Insulation Cover)

TPMHA0483EA

TPMHA0484EA

Basing Diagram

Anode Pattern (

Top View)

Basing Diagram

Bottom View

PX-ANODE

PY-ANODE

2.28

PX2

PX4

PX3

PX5
PX6

PX1

2.5

0.5

3.5

2.5

2.63

2.28

2.5

0.5

3.5

2.5

PY2

PY3

PY4

PY5

PY6

PY1

1 2 3 4 5 6 7 8 9

12
13

14
15

16
17

PY6 PY5 PY4

PY3 PY2

PX6

PX5

PX4

PY1

PX3

PX2

PX1

Dy11

Dy9

Dy7

Dy5

Dy3

Dy1

Dy2

Dy4

Dy6

Dy10

Dy8

Basing Diagram

Bottom View

K
Dy
P

: Photocathode
: Dynode (Dy1-Dy11)
: Anode (PX1-PX6)
(PY1-PY6)
: Grid

25.7 ± 0.5

27.2 ± 1.0

7.0 ± 0.5

5 MAX.

25- 0.45

Side View

Top View

1.2 MAX.

5 MAX.

2.54 PITCH

34- 1.5

4-R3.5

Bottom View

° ± 10°

GUIDE
MARK

PHOTOCATHODE

EFFECTIVE AREA

30 ± 0.5

Top View

EFFECTIVE AREA

2.54 PITCH

25- 0.45

Bottom View

GUIDE

CORNER

1 2 3 4 5 6 7 8 9

12
13

14
15

16
17

PY6 PY5 PY4

PY3 PY2

PX6

PX5

PX4

PY1

PX3

PX2

PX1

Dy11

Dy9

Dy7

Dy5

Dy3

Dy1

Dy2

Dy4

Dy6

Dy10

Dy8

Basing Diagram

Bottom View

K
Dy
P

: Photocathode
: Dynode (Dy1-Dy11)
: Anode (PX1-PX6)
(PY1-PY6)
: Grid

29.0 ± 0.5

4 MAX.

1 MAX.

12.0 ± 0.5

PHOTOCATHODE

INSULATION COVER

Side View

4.4 ± 0.7

[ACCESSORIES] (Unit: mm)

G Socket E678-32B

G D Type Socket Assembly E7514

TACCA0094ED

SOLD SEPARATELY

22.86

20.32

22.86

12.7

2.92

4.45

1.57

0.51

2.54

TACCA0236EB

25.4 ± 0.5

PIN No. 1

25.4 ± 0.5

-H.V
: RG-174/U (RED)

SIGNAL OUTPUT
: 0.8D-QEV (GRAY)

: 110 k

: 330 k

: 220 k

: 1 M

: 51

: 0.01 µF

R1, R14

R3 to R13

R15

R16 to R18

C1 to C3

PX4

PY4

PX3

PY3

PX2

PY2

PX1

PY1

PX4

PY4

PX3

PY3

PX2

PY2

PX1

PY1

DY11

DY10

DY9

DY8

DY7

DY6

DY5

DY4

DY3

DY2

DY1

R11

R10

R14

R13

R12

R18

R17

R16

R15

15.0 ± 0.5

450

POM HOUSING

ORIENTATION
BY MARKING

POTTING
COMPOUND

-H.V
: RG-174/U (RED)

PY3

PY2

PY4
PY5
PY6

PX3

PX4

PX1

PX2

PY1

PX6

PX5

PX6

PY6

PX5

PY5

PX6

PY6

PX5

PY5

TPMH1276E01
OCT. 2001 IP
Printed in Japan (1000)

POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12

HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it

HOMEPAGE URL http://www.hamamatsu.com

WARNING

~High Voltage~

* PATENT: USA Pat. No. 5410211 PATENT PENDING: JAPAN 12, USA 8, EUROPE 9

The product is operated at high voltage potential. Further, the metal housing of the product is
connected to the photocathode (potential) so that it becomes a high voltage potential when the
product is operated at a negative high voltage (anode grounded).
Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or
the damage to the other instruments.

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