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Электронный компонент: S1723-05

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S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of
4.1 mm (S1722-02) or 10 10 mm (S1723-05). Using quartz
glass as the light input window, these photodiodes deliver high sensitivity extending to the far UV region and are suitable for optical power meters.
Features
l Quartz glass window
l High UV sensitivity
l Large active area
S1722-02:
4.1 mm
S1723-05: 10 10 mm
l High-speed response
S1722-02: 60 MHz (V
R
=100 V)
S1723-05: 15 MHz (V
R
=30 V)
Applications
l Optical power meter
l Radiation detector
P H O T O D I O D E
Si PIN photodiode
Large area, high-speed PIN photodiodes for UV to near IR photometry
S1722-02, S1723-05
I General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
4
Max.
Power
dissipation
P
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
(mm)
(mm)
(mm
2
)
(V)
(mW)
(C)
(C)
S1722-02
/Q
TO-8
f4.1
13.2
120
50
-55 to +80
S1723-05
/Q
Ceramic
10 10
100
50
100
-20 to +60 -20 to +80
I Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
l
Peak
sensitivity
wavelength
lp
lp
He-Ne
Laser
Temp.
coefficient
of I
,
T
+1,
Cut-off
frequency
fc
Terminal
capacitance
Ct
NEP
Type No.
(nm)
(nm)
633 nm
Dark current
I
,
Max.
(nA)
(times/C)
(MHz)
(pF)
(W/Hz
1/2
)
S1722-02
30 *
2
60 *
2
10 *
2
1.1 10
-14
*
2
S1723-05
190 to 1100 960
0.5
0.33
10 *
3
1.15
15 *
3
100 *
3
2.3 10
-14
*
3
*1: Window material Q: Quartz glass
*2: V
4
=100 V
*3: V
4
=30 V
Si PIN photodiode
S1722-02, S1723-05
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPIN1045E02
Aug. 2002 DN
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 0.2
15.0 0.15
ACTIVE AREA
2.15 0.1
10.5
1.1
0.3
15.1 0.3
12.5 0.2
13.7 0.3
0.1
15
5.0 0.2
2.7
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
PHOTOSENSITIVE
SURFACE
CASE
0.5 MAX.
1.0 MAX.
INDEX MARK
1.4
The glass window may extend a
maximum of 0.3 mm above the
upper surface of the cap.
KPINA0027EC
S1722-02
I Spectral response
KPINB0181EA
I Photo sensitivity temperature characteristic
KPINB0182EA
I Dark current vs. reverse voltage
KPINB0183EA
I Terminal capacitance vs. reverse voltage
KPINB0184EA
I Dimensional outlines (unit: mm)
KPINA0077EA
S1723-05
0.1
190
400
600
800
1000
0.3
0.2
(Typ. Ta
=25 C)
0.4
0.5
0.6
0.7
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (%/

C)
190
400
600
800
1000
WAVELENGTH (nm)
0
(Typ. )
+0.5
+1.0
-0.5
+1.5
REVERSE VOLTAGE (V)
DARK CURRENT
1 pA
0.01
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25 C)
S1722-02
S1723-05
S1722-02
S1723-05
(Typ. Ta=25 C, f=1 MHz)
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
1 pF
0.1
1
10
100
10 pF
100 pF
10 nF
1 nF