Features
l High sensitivity
l Uniform element sensitivity
l Low cross-talk
l Low noise
Applications
l CD, DVD, MO (Magneto-Optical disc) signal pickups
l Laser beam alignment
l Various position detection applications
P H O T O D I O D E
Si PIN photodiode
Dual-element, plastic package photodiode
S2721-02, S3096-02, S4204
S2721-02, S3096-02 and S4204 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise,
these photodiodes have very low cross-talk between the elements.
Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs.
Please feel free to contact our sales office.
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
Element gap
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline
(mm)
(
m)
(V)
(C)
(C)
S2721-02
1 3 / 2 elements
5
S3096-02
1.2 3 / 2 elements
30
S4204
1 2 / 2 elements
20
20
-25 to +85
-40 to +100
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted, per 1 element)
Spectral
response
range
Peak
sensitivity
wavelength
p
Photo
sensitivity
=p
Dark
current
I
D
V
R
=10 V
all elements
Temp.
coefficient
of
I
D
T
CID
Cut-off
frequency
fc
V
R
=10 V
R
L
=50
=780 nm
-3 dB
Terminal
capacitance
Ct
V
R
=10 V
f=1 MHz
NEP
V
R
=10 V
Type No.
(nm)
(nm)
(A/W)
Typ.
(nA)
Max.
(nA)
(times/C)
(MHz)
(pF)
(W/Hz
1/2
)
S2721-02
320 to 1060
900
0.56
0.1
2.0
50
6.4 10
-15
S3096-02
0.58
0.05
0.5
25
5
7.2 10
-15
S4204
320 to 1100
960
0.65
0.1
1.0
1.15
30
3
8.7 10
-15
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S2721-02, S3096-02, S4204
Cat. No. KMPD1039E02
Jun. 2001 DN
4.6 0.2
(INCLUDING BURR)
ACTIVE AREA
Chip position accuracy with respect
to the package dimensions marked *
X, Y
0.2
2
0.7
0.5
2.54
(0.8)
(1.0)
5.0 0.4
4.5 *
(1.0)
(0.8)
5.0 0.4
14.5 0.3
PHOTOSENSITIVE
SURFACE
5
0.25
3
0.7
1.0
2.0
5.6 0.2
(INCLUDING BURR)
5.4 *
3
10
DETAILS OF
PHOTODIODE
3.0
0.005
1.0
5.5 *
a
b
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY
(A/W)
(Typ. Ta=25 C)
S4204
S2721-02
S3096-02
0
TEMPERATURE COEFFICIENT (%/
C)
200
400
600
800
1000
WAVELENGTH (nm)
+1.0
+0.5
(Typ.)
+1.5
-0.5
S3096-02, S4204
S2721-02
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
100 pA
1 nA
10 pA
1 pA
0.01
0.1
1
10
100
S2721-02
S3096-02
S4204
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
100 pF
1 pF
10 pF
0.1
1
10
100
S2721-02
S3096-02
S4204
ACTIVE AREA
4.1 0.2
(INCLUDING BURR)
0.02
2.0
2.54
(0.8)
(1.25)
4.9 0.4
4.0 *
(1.25)
(0.8)
13.8 0.3
4.9 0.4
5
0.25
10
0.5
0.8
1.8
5.0 0.2
(INCLUDING BURR)
4.7
*
4.8
*
5
10
DETAILS OF
PHOTODIODE
1.0
0.6
0.5
PHOTOSENSITIVE
SURFACE
a
b
Chip position accuracy with respect
to the package dimensions marked *
X, Y
0.2
2
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
ACTIVE AREA
4.1 0.2
(INCLUDING BURR)
0.5
2.54
5.2 0.2
4.0 *
0.8
0.25
4.5 0.3
PHOTOSENSITIVE
SURFACE
5
10
5.0 0.2
(INCLUDING BURR)
4.8 *
4.7 *
DETAILS OF
PHOTODIODE
3.0
1.2
0.03
7.5 5
1.8
0.6
0.5
a
b
10
5
Chip position accuracy with respect
to the package dimensions marked *
X, Y
0.2
2
ANODE a
CATHODE COMMON
ANODE b
CATHODE COMMON
s Spectral response
KMPDA0118EA
s Photo sensitivity temperature
characteristics
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
KMPDB0137EA
s Dimensional outlines (unit: mm, tolerance unless
otherwise noted: 0.1)
KMPDA0119EA
KMPDA0120EA
KMPDB0134EA
KMPDB0136EA
KMPDB0135EB
S2721-02
S4204
S3096-02
2
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