Features
l Subminiature plastic package with lens
l Visible-cut package
l High sensitivity: 1.0 mA (1000 lx)
Applications
l Tape start/end mark sensor for VTRs, cassette tape
recorders, etc.
l Rotary encoders
l Touch screen
P H O T O T R A N S I S T O R
Phototransistor
Subminiature package phototransistor
S2829
S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package.
I
F
Vcc
V
O
R
L
PULSE INPUT
tr
V
O
I
F
90 %
10 %
tf
KPTRC0001EA
s
Response time measurement circuit
s
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
35
V
Emitter-collector voltage
V
ECO
4
V
Collector current
Ic
20
mA
Collector dissipation
Pc
80
mW
Operating temperature
Topr
-25 to +85
C
Storage temperature
Tstg
-40 to +100
C
Soldering
-
260 C, 3 s, at least 2.5 mm away from package surface
-
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Photocurrent *
Ic
V
CE
=5 V, 1000 lx
0.3
1.0
-
mA
Dark current
I
CEO
V
CE
=20 V, 0 lx
-
-
100
nA
Collector-emitter saturation voltage
V
CE
(sat) Ic=0.3 mA, 1000 lx
-
-
0.4
V
Peak sensitivity wavelength
p
-
850
-
nm
Rise time
tr
-
2
-
s
Fall time
tf
Vcc=5 V, Ic=1 mA
R
L
=100
-
3
-
s
* Measured with a CIE standard A light source at 2856 K
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Phototransistor
S2829
Cat. No. KPTR1001E02
Mar. 2001 DN
3.5
5
10
VISIBLE-CUT RESIN
(BLACK)
3.5
0.6
0.4
2.54
(SPECIFIED AT THE LEAD ROOT)
(1.0)
(1.15)
1.6
6.0 1.0
1.3
1.6
0.72
0.57
0.16
R0.45
10
5
Tolerance unless otherwise noted: 0.2, 2
Shaded area indicates burr.
Values in parentheses are not guaranteed,
but for reference.
EMITTER
COLLECTOR
BURR
(Typ. V
CE
=5 V, E=1000 lx)
RELATIVE PHOTOCURRENT (%)
AMBIENT TEMPERATURE (C)
-25
0
25
50
75
100
140
160
120
100
80
60
40
20
(Typ. Ta=25 C)
RELATIVE SENSITIVITY
(%)
WAVELENGTH (nm)
100
80
60
40
20
0
400
500
600
700
800
900
1000 1100 1200
s
Spectral response
KPTRB0005EA
s
Dimensional outline (unit: mm)
s
Collector power dissipation
vs. ambient temperature
COLLECTOR POWER DISSIPATION (mW)
AMBIENT TEMPERATURE (C)
100
80
60
40
20
0
-25
0
25
50
75
100
KPCB0001EA
s
Photocurrent vs. ambient temperature
KPTRB0002EA
s Dark current vs. ambient temperature
(Typ. V
CE
=20 V)
DARK CURRENT
AMBIENT TEMPERATURE (C)
-25
0
25
50
75
100
10 pA
100 pA
1 nA
10 nA
100 nA
1
A
KPTRB0003EA
KPTRA0001EA
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