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Электронный компонент: S3071

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S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from
1.5 to 5.0 mm yet they offer excellent
frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
Features
l Active area size
S3071:
5.0 mm
S3072:
3.0 mm
S3399:
3.0 mm
S3883:
1.5 mm
l Cut-off frequency
S3071: 40 MHz (V
R
=24 V)
S3072: 45 MHz (V
R
=24 V)
S3399: 100 MHz (V
R
=10 V)
S3883: 300 MHz (V
R
=20 V)
l High reliability: TO-5/8 metal package
Applications
l Spatial light transmission
l High-speed pulsed light detection
P H O T O D I O D E
Si PIN photodiode
Large area, high-speed Si PIN photodiodes
S3071, S3072, S3399, S3883
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Power
dissipation
P
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
(mm)
(mm)
(mm
2
)
(V)
(mW)
(C)
(C)
S3071
/K
TO-8
5.0
19.6
S3072
/K
3.0
7.0
50
S3399
/K
3.0
7.0
S3883
/K
TO-5
1.5
1.7
30
50
-40 to +100 -55 to +125
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short
circuit
current
Isc
100 lx
Dark
current
I
D
(nA)
Temp.
coefficient
of I
D
T
CID
Cut-off
frequency
fc
R
L
=50
Terminal
capacitance
Ct
f=1 kHz
NEP
Type No.
(nm)
(nm)
p 660 nm780 nm830 nm
(A)
Typ. Max. (times/C) (MHz)
(pF)
(W/Hz
1/2
)
S3071
17
0.5*
3
10 *
3
40 *
3
18 *
3
2.1 10
-14
*
3
S3072
320 to 1060 920
0.6 0.47 0.54 0.56
6.5
0.3*
3
10 *
3
1.15
45 *
3
7 *
3
1.7 10
-14
*
3
S3399
5.6
0.1*
4
1.0 *
4
100 *
4
20 *
4
9.4 10
-15
*
4
S3883
320 to 1000 840
0.6 0.45 0.58 0.6
1.4
0.05*
2
1.0 *
2
1.12
300 *
2
6 *
2
6.7 10
-15
*
2
*1: Window material K: borosilicate glass
*2: V
R
=20 V
*3: V
R
=24 V
*4: V
R
=10 V
Si PIN photodiode
S3071, S3072, S3399, S3883
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1000
0.6
0.7
(Typ. Ta=25 C)
S3399, S3883
S3071, S3072
s
Spectral response
s
Photo sensitivity temperature characteristics
KPINB0147EA
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (%/

C)
-0.5
200
400
600
(Typ.)
800
1000
0
+0.5
+1.0
+1.5
S3399, S3883
S3071, S3072
KPINB0148EA
REVERSE VOLTAGE (V)
DARK CURRENT
1 pA
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25 C)
S3071
S3399
S3883
S3072
s
Dark current vs. reverse voltage
s
Terminal capacitance vs. reverse voltage
KPINB0149EA
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
1 pF
0.1
1
10
100
10 pF
100 pF
1 nF
(Typ. Ta=25 C, f=1 MHz)
S3071
S3072
S3883
S3399
KPINB0150EA
Si PIN photodiode
S3071, S3072, S3399, S3883
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KPIN1044E01
Mar. 2001 DN
KPINA0027EC
The glass window may extend a
maximum of 0.2 mm above the
upper surface of the cap.
20
4.2 0.2
2.4
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.25
CASE
0.4 MAX.
1.5 MAX.
KPINA0024EA
15
5.0 0.2
2.7
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
PHOTOSENSITIVE
SURFACE
CASE
0.5 MAX.
1.0 MAX.
INDEX MARK
1.4
The glass window may extend a
maximum of 0.3 mm above the
upper surface of the cap.
20
4.2 0.2
0.45
LEAD
8.1 0.2
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.25
CASE
WINDOW
5.9 0.1
2.6
0.4 MAX.
1.5 MAX.
The glass window may extend a
maximum of 0.2 mm above the
upper surface of the cap.
KPINA0026EA
20
4.75 0.2
2.6
0.45
LEAD
8.2 0.2
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.25
CASE
WINDOW
3.0 MIN.
0.4 MAX
1.5 MAX.
KPINA0025EB
S3399
S3883
s
Dimensional outline (unit: mm)
S3071
S3072
Si PIN photodiode
S3071, S3072, S3399, S3883