Features
l Higher sensitivity and low dark current than conventional type
l Sensitivity matching with BGO and CsI (TI) scintillators
l High quantum efficiency QE=85 % (=540 nm)
l Low capacitance
l High-speed response
l High stability
l Good energy resolution
Applications
l Scintillation detectors
l Calorimeters
l Hodoscopes
l TOF counters
l Air shower counters
l Particle detectors, etc.
P H O T O D I O D E
Si PIN photodiode
Large area sensors for scintillation detection
S3204/S3584 series
S3204/S3584 series are large area Si PIN photodiodes having an epoxy resin window. These photodiodes are also available without window.
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Type No.
Dimensional
outline
Window
material
Active area
(mm)
Reverse voltage
V
R
Max.
Power
dissipation
P
(mW)
Operating
temperature
Topr
(C)
Storage
temperature
Tstg
(C)
S3204-05
Epoxy resin
S3204-06
Window-less
150
S3204-08
Epoxy resin
S3204-09
Window-less
18 18
100
S3584-05
Epoxy resin
S3584-06
Window-less
150
S3584-08
Epoxy resin
S3584-09
Window-less
28 28
100
100
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
Dark
current
I
D
V
R
= 1 0 0 V
=p
Type No.
S p e ctral
res p o n s e
ran g e
(nm)
P eak
sensitivity
wavelength
p
(nm)
(A/W)
LSO
420 nm
(A/W)
BGO
480 nm
(A/W)
CsI(Tl)
540 nm
(A/W)
S h ort
circuit
current
Isc
100 lx
(A)
Typ.
(nA)
M ax.
(nA)
Temp.
coefficient
of I
D
T
CID
(ti m e s/ C)
Cut-off
Frequency
fc
V
R
= 1 0 0 V
-3 dB
(MHz)
Ter minal
capacitance
Ct
f= 1 M H z
V
R
=100 V
(pF)
NEP
V
R
=100 V
(W/Hz
1/2
)
S3204-05
0.62
0.19
0.25
0.3
S3204-06
320 to 1120
980
0.64
0.23
0.32
0.39
310
15
50
20
80
1. 2 10
-13
S3204-08
0.66
0.20
0.3
0.36
S3204-09
320 to 1100
960
0.66
0.22
0.33
0.41
340
6 * 20 *
20 *
130 *
6. 6 10
14
*
S3584-05
0.62
0.19
0.25
0.3
S3584-06
320 to 1120
980
0.64
0.23
0.32
0.39
740
20 100
10
200
1. 3 10
-13
S3584-08
0.66
0.20
0.3
0.36
S3584-09
320 to 1100
960
0.66
0.22
0.33
0.41
780
10 * 30 *
1.12
10 *
300 *
8. 6 10
14
*
*1: V
R
=70 V
Si PIN photodiode
S3204/S3584 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
s
s
s
s
s Dimensional outlines (unit: mm)
S3204 series
S3584 series
10 nA
10 A
1 A
1 pA
100 pA
1 nA
100 nA
10 pA
DARK CURRENT
(Typ.)
AMBIENT TEMPERATURE (C)
-20
60
80
0
20
40
S3584-08/-09 (V
R
=70 V)
S3204-08/-09 (V
R
=70 V)
S3584-05/-06 (V
R
=100 V)
S3204-05/-06 (V
R
=100 V)
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10 pF
0.1
1
10
1000
100
100 pF
1 nF
10 nF
(Typ. Ta=25 C, f=1 MHz)
S3584-08/-09
S3204-05/-06
S3204-08/-09
S3584-05/-06
0
TEMPERATURE COEFFICIENT (
%
/
C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-08
S3204/S3584-05
KPINA0040EA
KPINA0041EA
s Spectral response
KPINB0227EA
KPINB0093EC
s Dark current vs. ambient
temperature
s Photo sensitivity temperature characteristic
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
DARK CURRENT
0.1
1
10
1000
100
100 pA
1 nA
100 nA
10 nA
(Typ. Ta=25 C)
S3584-08/-09
S3204-05/-06
S3204-08/-09
S3584-05/-06
Cat. No. KPIN1051E03
May 2003 DN
KPINB0228EB
KPINB0229EB
KPINB0230EB
WHITE CERAMIC
ACTIVE AREA
0.45
LEAD
18.0
3.4
25.5
18.0
25.5
PHOTOSENSITIVE
SURFACE
10
2.54
0.2
1.2
5.0
0.2
1.75
+
0
-
0.5
+0
-
0.5
WHITE CERAMIC
0.45
LEAD
+
0
-
0.5
+0
-
0.5
3.4
28.0
35.6
1.75
10
2.54
0.2
28.0
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
35.6
1.2
5.0
0.2
s Spectral response (without window)
KPINB0264EA
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1200
1000
0.6
0.7
(Typ. Ta=25 C)
S3204/S3584-09
S3204/S3584-06
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