Features
q Higher sensitivity and low dark current than conventional type
q Sensitivity matching with BGO and CsI (TI) scintillators
q High quantum efficiency QE=85 % (
=540 nm)
q Low capacitance
q High-speed response
q High stability
q Good energy resolution
Applications
q Scintillation detectors
q Calorimeters
q Hodoscopes
q TOF counters
q Air shower counters
q Particle detectors, etc.
P H O T O D I O D E
Si PIN photodiode
Large area sensors for scintillation detection
S2744/S3588-08, -09
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Type No.
Dimensional
outline
Window
material
Active area
(mm)
Reverse
voltage
V
R
Max.
Power
dissipation
P
(mW)
Operating
temperature
Topr
(C)
Storage
temperature
Tstg
(C)
S2744-08
Epoxy resin
S2744-09
Window-less
10 20
S3588-08
Epoxy resin
S3588-09
Window-less
3 30
100
100
-20 to +60
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
Dark
current
I
D
V
R
=70 V
=p
Type No.
S p e ctral
res p o n s e
ran g e
(nm)
P e a k
sensitivity
wavelength
p
(nm)
(A/W)
LSO
420 nm
(A/W)
BGO
480 nm
(A/W)
CsI(Tl)
540 nm
(A/W)
S h ort
circuit
current
Isc
100 lx
(A)
Typ.
(nA)
Max.
(nA)
Temp.
coefficient
of I
D
T
CID
(times/ C)
Cut-off
Frequency
fc
V
R
= 7 0 V
(MHz)
Terminal
capacitance
Ct
f= 1 M H z
V
R
= 7 0 V
(pF)
NEP
V
R
= 7 0 V
(W/Hz
1/2
)
S2744-08
0.66
0.20
0.30
0.36
S2744-09
0.66
0.22
0.33
0.41
200
25
85
S3588-08
0.66
0.20
0.30
0.36
S3588-09
320 to 1100
960
0.66
0.22
0.33
0.41
90
3
10
1.12
40
40
4.7 10
-14
Si PIN photodiode
S2744/S3588-08, -09
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
s
s
s
s
s Dimensional outlines (unit: mm)
S2744-08/-09
S3588-08/-09
10 nA
1 A
1 pA
100 pA
1 nA
100 nA
10 pA
DARK CURRENT
(Typ. V
R
=70 V)
AMBIENT TEMPERATURE (C)
-20
60
80
0
20
40
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10 pF
0.1
1
10
100
100 pF
1 nF
10 nF
(Typ. Ta=25 C, f=1 MHz)
S2744-08/-09
S3588-08/-09
0
TEMPERATURE COEFFICIENT (
%
/
C)
200
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH (nm)
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
0.1
0.2
0.3
0.4
0.5
800
1000
1200
0.6
0.7
(Typ. Ta=25 C)
S2744/S3588-08
S2744/S3588-09
KPINA0039EB
KPINA0042EB
s Spectral response
KPINB0265EB
KPINB0093EC
s Dark current vs. ambient temperature
s Photo sensitivity temperature characteristic
s Dark current vs. reverse voltage
s Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
DARK CURRENT
1 pA
0.1
1
10
100
10 pA
100 pA
1 nA
10 nA
(Typ. Ta=25 C)
Cat. No. KPIN1049E03
May 2003 DN
KPINB0220EA
KPINB0221EA
KPINB0222EB
+
0
-
0.4
+0
-
0.6
0.45
LEAD
PHOTOSENSITIVE
SURFACE
5.0 0.2
2.5
10
2.0 0.2
0.5
10.0
20.0
WHITE CERAMIC
2.0
14.2
27.0
ACTIVE AREA
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
0.45
LEAD
3.0
30.0
1.2
5.8
34.0
10
1.52 0.2
WHITE CERAMIC
0.45
2.5 0.2
1.1
+
0
-
0.4
+0
- 0.8
The coating resin may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
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