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Электронный компонент: S4276-02

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Features
l Large area
l Low dark current
l Excellent about bias voltage tolerance
Applications
l Heavy ions energy detection
l X-ray detection
l E/E detection
P H O T O D I O D E
Si PIN photodiode
Large area Si PIN photodiode for direct detection
S5377/S4276 series
S5377/S4276 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays.
These detectors are mounted on PC boards with openings for the purpose of
E detection of charged particles. Other Si detectors and PSDs with
different configurations, thicknesses and surface areas are also available upon request.
s
Specifications / Absolute maximum ratings
Absolute maximum ratings
Dead layer
thickness *
1
Active area
Chip
thickness
Uniform
thickness
Surface
orientation Front
side
Rear
side
Reverse
voltage
V
R
Current
Operating
temperature *
2
Topr
Storage
temperature *
2
Tstg
Type No.
(mm)
(m)
(m)
(m) (m)
(V)
(mA)
(C)
(C)
S5377-04
325 15
20
S5377-05
280 15
2
120
S5377-02
500 15
20
S5377-03
28 28
450 15
4.0
2
200
S4276-02
325 15
20
S4276-03
48 48
280 15
5.0
(111)
1.5
2
120
2
0 to +60
0 to +80
*1: Estimated value
*2: No condensation
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Dark current
I
D
Full depletion voltage
V
D
Max.
Typ.
Max.
Rise time *
3
tr
Terminal capacitance
Ct
V
R
= V
D
f=100 kHz
Type No.
(V)
(nA)
(nA)
(ns)
(pF)
S5377-04
10
50
300
S5377-05
100
60
300
70
320
S5377-02
30
150
190
S5377-03
170
200
1000
40
200
S4276-02
20
100
860
S4276-03
100
200
1000
100
900
*3: Rise time is the time required for transition from 10 % to 90 % of the peak output value. The light source is a dalta function
pulse of a laser diode (800 nm) and the load resistance is 50.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S5377/S4276 series
Cat. No. KPIN1058E01
Mar. 2001 DN
s Dark current vs. reverse voltage
0
20
40
60
80
100
0
300
200
100
500
400
800
700
600
1000
900
120 140 160 180 200
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE (pF)
(Typ. Ta=25 C)
S5377-05
S5377-02
s Terminal capacitance vs. reverse voltage
s Dimensional outlines [unit: mm, tolerance unless otherwise noted: 0.2, material of PCB: G10 (black)]
44.0 0.2
44.0 0.2
10.0
3.0
3.0
CATHODE
RESIN FOR
FIXING OF CHIP
10.0
ANODE
CATHODE
1.6
3.0 MAX.
PROTECTION RESIN
FOR AI WIRE
HOLE
o
27.0 0.2
HOLE
(4 ) 2.3 0.1
o28.0
ACTIVE AREA
(4 ) R1.0
0
20
40
60
80
100 120 140 160 180
0
10
20
40
30
50
200
REVERSE VOLTAGE (V)
DARK CURRENT (nA)
(Typ. Ta=25 C)
S5377-05
S5377-02
s Reference
T. MOTOBAYASHI, et al., "PARTICLE IDENTIFICATION OF HEAVY IONS WITH LARGE SILICON DETECTORS", Nucl. Instr.
Meth. A284 (1989) 526-528
CATHODE ANODE
2.75
2.75
61.0 0.2
3.0 MAX.
11.0
ANODE
CATHODE
WIRE
PROTECTION
RESIN
HOLE
o
45.0 0.2
56.0 0.2
1.6
(4 ) R1.0
HOLE
(4 ) 2.3 0.1
o48
ACTIVE AREA
KPINB0236EA
KPINB0235EA
S5377 series
S4276 series
KSPDA0023EC
KSPDA0024EB