Features
l Uniform element characteristics
Quadrant format on one chip with
1 mm active area
ensures uniform characteristics between elements.
l Single power supply operation
Allows easy and simple operation.
Applications
l Low-light-level detection
l Laser beam positioning
P H O T O D I O D E
Si APD
1 mm quadrant APD
S4402
s
General ratings
Parameter
Symbol
Value
Unit
Window material
-
Borosilicate glass
-
Active area size
A
1 mm/4
mm
Effective active area
-
0.17 (per 1 element)
mm
2
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-55 to +100
C
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
-
400 to 1000
-
nm
Peak sensitivity wavelength
p
M=100
-
800
-
nm
Photo sensitivity
S
=800 nm, M=1
-
0.5
-
A/W
Quantum efficiency
QE
=800 nm, M=1
-
75
-
%
Breakdown voltage
V
BR
I
R
=100 A
-
150
200
V
Temperature coefficient of V
BR
-
0.65
-
V/C
Dark current
I
D
M=100
-
0.4
2.0
nA
Cut-off frequency
fc
M=100, =800 nm
R
L
=50 , -3 dB
-
310
-
MHz
Terminal capacitance
Ct
M=100, f=1 MHz
-
8
-
pF
Excess noise figure
x
M=50, f=10 kHz
Io=10 nA
-
0.35
-
-
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si APD
S4402
Cat. No. KAPD1002E02
Mar. 2001 DN
0.07
1
DETAILS OF ACTIVE AREA
(DESIGN DIMENSION)
CASE GND
0.07
13
4.6 0.2
1.3
0.45
LEAD
STAND OFF
8.2 0.1
PHOTOSENSITIVE
SURFACE
9.2 0.2
3.5
5.8
WINDOW
3.0 MIN.
0.8
(Ta=25 C,
=800 nm, M=100)
0.1
0
POSITION (m)
RELATIVE SENSITIVITY (%)
600
200
400
800
1000
1200
1
10
100
(Typ. Ta=25 C, f=1 MHz)
1 pF
10
-2
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10
0
10
-1
10
1
10
2
10
3
10 pF
100 pF
1 nF
0
50
100
150
200
10
-1
10
0
10
1
10
2
10
3
REVERSE VOLTAGE (V)
GAIN
(Typ. Ta=25 C)
(Typ. Ta=25 C)
0
200
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
400
600
800
1000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
s
Dimensional outline (unit: mm)
KAPDA0021EA
s
Spectral response
KAPDB0046EA
s
Dark current vs. reverse voltage
KAPDB0047EA
(Typ. Ta=25 C)
10 pA
0
REVERSE VOLTAGE (V)
DARK CURRENT
50
100
150
200
100 pA
1 nA
10 nA
100 nA
s
Terminal capacitance vs. reverse voltage
KAPDB0048EA
s
Gain vs. reverse voltage
KAPDB0049EA
s
Cross-talk example
KAPDB0050EA
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