Features
l Large area
l Low dark current
l Excellent about bias voltage tolerance
l High position linearity
Applications
l Heavy ions energy detection
l Heavy ions position detection
l E/E detection
P S D
PSD
Large area PSD for direct detection
S5378 series
S5378 series are 2-D PSD (Position Sensitive Detector) for the position of incident particles. Based on the conventional "pin-cushion type PSD",
S5378 series has been improved to reduce the dead area in the Si chip. These detectors are mounted on PC boards with openings for the
purpose of
E detection of charged particles. Other Si detectors and PSDs with different configurations, thicknesses and surface areas are also
available upon request.
s
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
120
V
Current
-
2
mA
Operating tem perature
Topr
0 to +60 *
1
C
Storage temperature
Tstg
0 to +80 *
1
C
*1: No condensation
s
Specifications (Ta=25 C)
S5378-02
S5378-03
Parameter
Typ.
Max.
Typ.
Max.
Unit
Active area
45 45
-
45 45
-
mm
Chip thickness
325 15
-
280 15
-
m
Uniform thickness
5.0
-
5.0
-
m
Surface orientation
(111)
-
(111)
-
-
Front side
-
1.0
-
1.0
m
Dead layer
thickness *
2
Rear side
-
20
-
2
m
*2: Estim ated value
s
Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
S5378-02
S5378-03
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Full depletion voltage
Vfd
-
-
100
-
-
100
V
Interelectrode resistance
Rie
1.0
2.0
4.0
1.0
2.0
4.0
k
ZONE a
-
-
900
-
-
900
m
Position detection
Error *
3
ZONE b
E
-
-
1800
-
-
1800
m
Dark current
I
D
V
R
=Vfd
-
30
150
-
200
1000
nA
Term inal capacitance
Ct
V
4
=Vfd, f=10 kHz
-
780
-
-
820
-
pF
Position resolution *
"
-
-
200
-
-
200
-
m
*3: As the ideal position linearity curve of this type of PSD is a slight pin-cushion pattern, position detection error is the
difference between the actual linearity and the ideal curve shown below (The electrical center point is set at the origin).
*4: Light source: LED (900 nm)
Light spot size
: 200 m
Frequency range
: 10 kHz
Photocurrent
: 1 A
Input noise of circuits
: 10 V (B=10 kHz)
Interelectrode resistance: typical value (See characteristics table)
s Ideal curve of position linearity
(Scan interval: 3.6 mm on active surface)
0
-22.5
-22.5
22.5
0
22.5
KPSDA0037EA
21.6
43.2
ZONE b
21.6
43.2
ZONE a
KPSDA0038EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
PSD
S5378 series
Cat. No. KPSD1019E01
Apr. 2001 DN
CATHODE
(COMMON)
2.75
2.75
61.0 0.2
3.0 MAX.
CATHODE
(COMMON)
AI-WIRE 3.0 MAX.
.6
ANODE 2
ANODE 3
HOLE
o
45.0 0.2
56.0 0.2
1.6
(4 ) R1.0
HOLE (4 ) 2.3 0.1
o45
ACTIVE AREA
ANODE 1 ANODE 4
s Dark current vs. reverse voltage (S5378-02)
0
20
40
60
80
100
0
1500
1000
500
2500
2000
3000
120
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE (pF)
(Typ. Ta=25 C)
s Terminal capacitance vs. reverse voltage (S5378-02)
s Dimensional outline [unit: mm, tolerance unless otherwise noted: 0.2, material of PCB G10 (black)]
0
20
40
60
80
100
120
0
10
20
40
30
50
REVERSE VOLTAGE (V)
DARK CURRENT (nA)
(Typ. Ta=25 C)
s Reference
1) Tadayoshi DOKE, et al., "A NEW TWO-DIMENSIONAL POSITION SENSITIVE DETECTOR WITH A GOOD LINEAR
RESPONSE", Nucl. Instr. Meth. A261 (1987) 605-609
2) K. Munakata, et al., "Performances of a Two-Dimensional Position-Sensitive Si Detector with a Large Effective Area.",
RIKEN Accel. Prog. Rep. 22 (1988)
3) T. YANAGIMACHI, et al., "NEW TWO-DIMENSIONAL POSITION SENSITIVE SILICON DETECTOR WITH GOOD
POSITION LINEARITY AND RESOLUTION", Nucl. Instr. Meth. A275 (1989) 307-314
4) K. leki, et al., "A new method of position determination for a two-dimensional position-sensitive detector", Nucl. Instr.
Meth. A297 (1990) 312-314
KPSDB0089EA
KPSDB0088EA
KPSDA0036EC
s Position linearity
(
=830 nm, spot light size=200 m, scan interval=3.6 mm)
0
X-POSITION (mm)
-22.5
-22.5
22.5
0
Y-POSITION (mm)
22.5
KPSDA0056EA
I
2
I
3
I
1
y
x
I
4
x = (Lx / 2) {(I
3
+ I
4
) - (I
1
+ I
2
)} / (I
1
+ I
2
+ I
3
+ I
4
)
y = (Ly / 2) {(I
2
+ I
3
) - (I
1
+ I
4
)} / (I
1
+ I
2
+ I
3
+ I
4
)
I
1
, I
2
, I
3
, I
4
: Output current of each electrode
Lx = Ly = 45 mm (S5378 series)
KPSDC0083EA
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