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Электронный компонент: S5768

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S5767 and S5768 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all
integrated in a single chip and molded into a clear plastic package.
Features
l Low-voltage operation: 2.2 to 7 V
l Clear plastic package with lens
l Low current consumption
l Transistor output with built-in pull-up resistor
l S5767: "H" level output at light input
S5768: "L" level output at light input
Applications
l Low-speed optical links
l Rotary encoders
P H O T O I C
Low-voltage operation photo IC
Operation at low voltage from 2.2 V
S5767, S5768
s
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 to +7
V
Output voltage
Vo
-0.5 to Vcc
V
Low level output current
Io
8
mA
Power dissipation
P
250
mW
Operating temperature
Topr
-25 to +85
C
Storage temperature
Tstg
-40 to +100
C
Soldering
-260 C, 3 s, at least 2.5 mm away from package surface
-
s
Electrical and optical characteristics (Ta=25 C, Vcc=5 V, light source: p=660 nm LED, unless otherwise noted)
S5767
S5768
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Supply voltage
Vcc
2.2
-7
2.2
-7
V
Low level output voltage
V
OL
I
OL
=4 mA *
1
-
0.1
0.4
-
0.1
0.4
V
High level output voltage
V
OH
*
2
4.9
--4.9
-- V
Low level current consumption
I
CCL
*
1
-
1.4
3
-
1.4
3
mA
High level current consumption
I
CCH
*
2
-
1.2
3
-
1.2
3
mA
LH Threshold illuminance
E
LH
-
1
3
-
-
-
W/mm
2
HL Threshold illuminance
E
HL
-
-
-
-
1
3
W/mm
2
Hysterisis
-*
3
-0.85
- - 0.9
-
-
LH Propagation delay time
t
PLH
-
1
5
-
1.5
8
s
HL Propagation delay time
t
PHL
3 W/mm
2
*
4
-1.5
8
- 1
5
s
Peak sensitivity wavelength
p
-
850
-
-
850
-
nm
Rise time
tr
-0.03
- -0.03
- s
Fall time
tf
3 W/mm
2
*
4
-
0.07
-
-
0.07
-
s
*1: S5767: E (illuminance) =0 W/mm
2
, S5768: E=3 W/mm
2
*2: S5767: E=3 W/mm
2
, S5768: E=0 W/mm
2
*3: S5767: E
HL
/E
LH
, S5768: E
LH
/E
HL
*4: S5767: R
L
=2.2 k, S5768: R
L
=2.2 k
Low-voltage operation photo IC
S5767, S5768
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KPIC1037E01
Mar. 2001 DN
POWER DISSIPATION (mW)
AMBIENT TEMPERATURE (C)
300
(Typ.)
200
100
0
-25
0
25
50
75
100
s
Spectral response
s
Threshold illuminance vs. ambient temperature
KPICB0029EA
s
Dimensional outline (unit: mm)
s
Response time measurement circuit
KPICC0005EA
KPICB0027EA
KPICB0024EA
KPICA0024EA
(Typ. Ta=25 C)
1200
200
400
600
800
1000
0
WAVELENGTH (nm)
RELA
TIVE SENSITIVITY (%)
20
40
60
80
100
THRESHOLD ILLUMINANCE (RELATIVE VALUE)
AMBIENT TEMPERATURE (C)
1.5
1
0.5
0
-50
-25
0
25
50
75
100
(Typ. Vcc=5 V, normalized at Ta=25 C, S5767: L
H, S5768: HL)
S5767: L
H
S5768: H
L
S5767: H
L
S5768: L
H
S5767
KPICC0038EA
I
F
PULSE INPUT
5 V
Vo
GND
R
L
0.01
mF
I
F
t
PHL
tf
tr
V
OL
10 %
1.5 V
90 %
V
OH
50 %
t
PLH
S5768
I
F
PULSE INPUT
5 V
Vo
GND
R
L
0.01 F
I
F
t
PLH
Vo
tr
tf
V
OL
10 %
1.5 V
90 %
V
OH
50 %
t
PHL
4.3 0.3
(INCLUDING BURR)
4.15
3.0
2.4
R 0.9
0.45
0.6
10
5
10
5
2.5 MAX.
0.45
2.54 0.5
(SPECIFIED AT THE LEAD ROOT)
Tolerance unless otherwise noted: 0.2, 2
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
0.6 0.3
(0.8)
(1.2)
1.43
4.43
15 MIN.
1.4
1.7
(INCLUDING BURR)
4.6
+0.6 -0.3
(1.27)
GND
V
O
Vcc
s Power dissipation vs. ambient temperature