S6204 series is a thermoelectrically cooled Si photodiode developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and
feedback resistor (10 G
) are integrated into a single package. A thermistor is also included in the same package for temperature control so that
the photodiode and I-V conversion circuit can be cooled for stable operation. S6204 series also features low noise and low NEP, and is especially
suitable for NOx detection.
Features
l Large active area size
S6204/-01: 10 10 mm
S6204-03 :
15.6 mm (lens)
l UV to NIR Si photodiode optimized for precision photometry
l Compact hermetic package with sapphire window
l High precision FET input operational amplifier
l High gain: Rf=10 G
l Low noise and NEP
l High cooling efficiency
S6204/-03:
T=50 C
S6204-01 :
T=30 C
l High stability with thermistor
Applications
l NOx detection
l Low-light-level measurement
P H O T O D I O D E
Si photodiode with preamp
Large area photodiode integrated with op amp and TE-cooler
S6204 series
S6204 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
s Absolute maximum ratings s Recommended operating conditions
Parameter
Symbol
Value
Parameter
Symbol
S6204/-01
S6204-03
Supply voltage (preamp)
Vcc
18 V
Supply voltage (preamp)
Vcc
5 to 15 V
R ev erse v oltage (S 620 4-0 3, ph otodio de )
V
R
30 V
R everse voltage (photodiode)
V
R
0 V
15 V
Operating temperature
Topr
-30 to +60
C
TE-cooler current
Ite
0.8 A Max.
Storage temperature
Tstg
-40 to +80
C
Thermistor power dissipation
Pth
0.03 mW Max.
O p era ting te m pe ratu re (ph o tod iod e)
Tdopr
-30 to +60
C
Load resistance
R
L
100 k
Min.
TE-cooler allowable voltage *
1
Vte
5 V
TE-cooler allowable current
Ite
1 A
Thermistor power dissipation
Pth
0.2 mW
*1: Max ripple: 10 %
s Electrical and optical characteristics (Typ. Ta=25 C, Vcc=
15 V, R
L
=1 M
)
S6204
S6204-01
S6204-03
Parameter
Symbol
Condition
T= -25
C
V
R
=0 V
T= -5
C
V
R
=0 V
T= -25
C
V
R
=15 V
Unit
Spectral response range
190 to 1100
320 to 1100
nm
Peak sensitivity wavelength
p
960
nm
Feedback resistance
Rf
10
G
=200 nm
-0.9
-0.9
Photo sensitivity
S
=p
-5.1
-5.1
-6.5
V/nW
Output noise voltage
Vn
D ark state, f=10 H z
42
50
13Vrms/Hz
1/2
Noise equivalent power
NEP
=p, f=10 Hz
9
10
2
fW/Hz
1/2
Output offset voltage
Vos
Dark state
2
2
3
mV
Cut-off frequency
fc
-3 dB
130
Hz
Output voltage swing
Vo
-13V
Supply current
Icc
Dark state
0.6
mA
Thermistor resistance
Rth
86
30
86
k
1
Si photodiode with preamp
S6204 series
0
200
WAVELENGTH (nm)
PHO
T
O
SENSITIVITY (V/nW)
400
600
800
1000
(Typ. Ta=25 C, Vcc=15 V, S6204/-01: V
R
=0 V, S6204-03: V
R
=15 V)
-1
-2
-3
-4
-5
-8
-7
-6
S6204 (T= -25 C)
S6204-01 (T= -5 C)
S6204-03 (T= -25 C)
s Spectral response
KSPDB0147EA
-30
1
FREQUENCY (Hz)
RELA
TIVE OUTPUT PO
WER (dB)
10
100
10000
1000
(Typ. Ta=25 C, Vcc=15 V, S6204/-01: V
R
=0 V, S6204-03: V
R
=15 V)
-20
-10
10
0
S6204 (T= -25 C)
S6204-01 (T= -5 C)
S6204-03 (T= -25 C)
s Frequency response
KSPDB0148EA
10
-15
1
FREQUENCY (Hz)
NEP (fWr
m
s/Hz
1/2
)
10
100
10000
1000
(Typ. Ta=25 C, Vcc=15 V, S6204/-01: V
R
=0 V, S6204-03: V
R
=15 V)
10
-14
10
-12
10
-13
S6204-01 (T= -5 C)
S6204 (T= -25 C)
S6204-03 (T= -25 C)
s NEP vs. frequency
KSPDB0149EB
10
-7
10
-6
1
FREQUENCY (Hz)
OUTPUT NOISE
V
O
L
T
A
GE (Vr
ms/Hz
1/2
)
10
100
10000
1000
(Typ. Ta=25 C, Vcc=15 V, S6204/-01: V
R
=0 V, S6204-03: V
R
=15 V)
10
-5
10
-3
10
-4
S6204-01 (T= -5 C)
S6204 (T= -25 C)
S6204-03 (T= -25 C)
s Output noise voltage vs. frequency
KSPDB0150EC
-30
0
TE-COOLER CURRENT Ite (A)
DETECT
OR TEMPERA
TURE T
(
C)
TE-COOLER V
O
L
T
A
GE Vte
(V)
0.4
0.2
0.6
1.0
0.8
(Typ. Ta=25 C)
-10
30
10
20
0
-20
0
2
6
4
5
3
1
T vs. Ite
Vte vs. Ite
s Detector temperature vs. TE-cooler current
KSPDB0151EA
S6204/-03
S6204-01
-30
0
TE-COOLER CURRENT Ite (A)
DETECT
OR TEMPERA
TURE T
(
C)
TE-COOLER V
O
L
T
A
GE Vte
(V)
0.4
0.2
0.6
1.0
0.8
(Typ. Ta=25 C)
-10
30
10
20
0
-20
0
2
6
4
5
3
1
T vs. Ite
Vte vs. Ite
KSPDB0172EA
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si photodiode with preamp
S6204 series
Cat. No. KSPD1031E03
Jul. 2001 DN
0.9 0.2
42.0 0.4
34.0 0.2
16.0 0.2
24.3 0.2
(2
) 4
15.6
13.5 0.3
7.2
19 1
17.8 0.3
7.6 0.3
INDEX MARK
7.6 0.3
17.8 0.3
(12
) 1.0 0.2
PLASTIC LENS
27.4 0.3
42.0 0.4
34.0 0.2
WINDOW
16.0 0.2
(2 ) 4
7.0 0.3
19 1
0.9 0.2
ACTIVE AREA
SAPPHIRE WINDOW (t=0.5)
PHOTOSENSITIVE
SURFACE
17.8 0.3
7.6 0.3
(4.7)
INDEX MARK
24.3 0.2
27.4 0.3
S6204-01
KSPDA0079EA
KSPDA0088EB
S6204-03
A tantalum or ceramic capacitor of 0.1 to 10
F must be connected to the supply voltage leads
(pins and ) as a bypass capacitor used to prevent the device from oscillation.
Precautions for use
s ESD
S6204 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the
human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a
countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the
same potential. The following precautions must be observed during use:
To protect the device from electro static discharge which accumulate on the operator or the operator
,
s clothes, use a wrist
strap or similar tools to ground the operator
,
s body via a high impedance resistor (1 M
).
A semiconductive sheet (1 M
to 10 M) should be laid on both the work table and the floor in the work area.
When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 10 M
.
For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 M
/cm
2
to 1 G
/cm
2
.
s Strength
Thermoelectrically-cooled devices may be damaged if subjected to shock, for example drop impact. Take sufficient care
when handling these devices.
s Lead forming
When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the
hermetic sealing, possibly degrading the cooling capacity.
To form the leads, hold the roots of the leads securely with a pair of pliers and bend them.
s Heatsink
Use a heatsink with thermal resistance less than 1.3 C/W. Apply thermal grease between the heatsink and detector
package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the
detector package at this point.
s Wiring
Be careful not to misconnect the plus and minus leads of the thermoelectric cooler or preamplifier. Supplying a voltage or
current while these connections are reversed may damage the device.
4
PDF 
ZIP