These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk.
S7547 is specifically developed for violet laser detection, providing greatly improved sensitivity at
=410 nm.
Custom-designed devices (with different element shapes, number of elements, characteristics and packages) are also available to meet your
specific needs. Feel free to contact our sales office.
P H O T O D I O D E
Si PIN photodiode
Quadrant photodiode / plastic package
Features
l Clear plastic package (4 4.8 mm)
l High sensitivity
l Uniform element characteristic
l Low cross-talk
l Low noise
Applications
l Signal readout for CD, DVD and MO (Magneto Optical) disc
l Laser beam alignment
l Position detection, etc.
l Violet laser detection (S7547)
l Optical disc (DVD, etc.) pickup using violet laser (S7547)
S7379-01, S6695-01, S6058, S7547
s General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area
Elements gap
Reverse voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline
(mm)
(m)
(V)
(C)
(C)
S7379-01
1.0/4 element
20
S6695-01
2.0 2.0/4 element
15
S6058
S7547
0.6 1.2/4 element
10
20
-25 to +85
-40 to +100
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted, per 1 element)
Spectral
response
range
Peak
sensitivity
wavelength
p
Photo sensitivity
S
Dark current
I
D
V
R
=10 V
All elements
Temp.
coefficient
of
I
D
T
CID
Cut-off
frequency
fc
V
R
=10 V
R
L
=50
=830 nm
Terminal
capacitance
Ct
V
R
=10 V
f=1 MHz
NEP
V
R
=10 V
Type No.
(nm)
(nm)
=p
(A/W)
=410 nm
(A/W)
Typ.
(nA)
Max.
(nA)
(times/C)
(MHz)
(pF)
(W/Hz
1/2
)
S7379-01
0.55
0.19
0.04
0.2
80
1
6.5 10
-15
S6695-01
320 to
1060
900
0.65
0.18
0.1 *
1
1 *
1
40 *
1
3 *
1
8.7 10
-15
*
1
S6058
800
0.55
0.21
0.04 *
2
0.2 *
2
150 *
2
1 *
2
6.5 10
-15
*
2
S7547
320 to
1000
760
0.5
0.27
0.01 *
2
0.2 *
2
1.15
500 *
2
2 *
2
3.6 10
-15
*
2
*1: V
R
=5 V
*2: V
R
=3 V
1
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO SENSITIVITY (A/W)
200
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
400
600
800
1000
S7379-01
S6058
S6695-01
QE=100 %
S7547
WAVELENGTH (nm)
(Typ. )
TEMPERATURE COEFFICIENT (%/
C)
200
-0.5
+1.5
+1.0
+0.5
0
400
600
800
1000
S7379-01, S6695-01
S6058
S7547
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
0.01
100 fA
1 nA
100 pA
10 pA
1 pA
0.1
1
10
100
S6058
S6695-01
S7547
S7379-01
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, f=1 MHz)
TERMINAL CAPACITANCE
0.1
100 fF
100 pF
10 pF
1 pF
1
10
100
S6058
S6695-01
S7547
S7379-01
s Spectral response
KMPDB0145EA
s Photo sensitivity temperature characteristics
KMPDB0146EA
s Dark current vs. reverse voltage
KMPDB0147EA
s Terminal capacitance vs. reverse voltage
KMPDB0148EA
2
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
1.27
ELECTRODE
1.27
d
a
c
b
4.1 0.2
(INCLUDING BURR)
4.0 *
1.5 0.4
1.5 0.4
(2 ) 10
0.8
1.8
(2 ) 5
PHOTOSENSITIVE
SURFACE
5.0 0.2
(INCLUDING BURR)
4.7 *
4.8 *
(2
) 5
(2
) 10
0.5
ANODE a
CATHODE COMMON
ANODE b
ANODE c
CATHODE COMMON
ANODE d
2.0
2.0
b
c
a
d
0.015
0.25
0.7 0.3
0.7 0.3
7.0 0.3
0.1 0.1
0.5
0.015
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
0.2
2
s Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1)
KMPDA0121EA
NC
ANODE a
ANODE b
CATHODE COMMON
NC
ANODE c
ANODE d
CATHODE COMMON
a
d
b
c
0.02
0.02
1.0
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
0.2
2
1.27
ACTIVE AREA
1.27
1.27
4.1 0.2
(INCLUDING BURR)
4.0 *
3.4 0.4
3.4 0.4
(1.25)
(1.25)
(0.8)
(0.8)
(2 ) 10
0.8
0.25
1.8
(2 ) 5
10.8 0.3
5.0 0.2
(INCLUDING BURR)
4.7 *
4.8 *
(2
) 5
(2
) 10
0.5
0.4
PHOTOSENSITIVE
SURFACE
a
b
d
c
0.3 MAX
0.3 MAX
KMPDA0137EA
S6695-01
S7379-01
3
Si PIN photodiode
S7379-01, S6695-01, S6058, S7547
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KMPD1053E04
Sep. 2001 DN
1.27
ACTIVE AREA
1.27
1.27
4.1 0.2
(INCLUDING BURR)
4.0 *
3.4 0.4
3.4 0.4
(1.25)
(1.25)
(0.8)
(0.8)
(2 ) 10
0.8
0.25
1.8
(2 ) 5
10.8 0.3
0.01
1.2
ELECTRODE
0.6
0.01
a
c
b
d
5.0 0.2
(INCLUDING BURR)
4.7 *
4.8 *
(2
) 5
(2
) 10
0.5
0.4
NC
ANODE a
ANODE b
CATHODE COMMON
NC
ANODE c
ANODE d
CATHODE COMMON
PHOTOSENSITIVE
SURFACE
DETAILS OF PHOTODIODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
0.2
2
d
a
c
b
S6058, S7547
KMPDA0007EB
4
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