Features
l Large area
l Low noise
l Low dark current, excellent bias voltage tolerance
l High radiation tolerance
l 2-D position detection
(diagonal intersecting readout from both N and P sides of
stripe detector)
l Suitable for ladder assembly
Applications
l Tracking detector in high energy physics experiment:
collider experiment, fix target experiment
l Charged particle position detection
l X-ray detection
S S D
Si strip detector
AC-coupled double-sided Si strip detector for particle tracking
S6935
S6935 is SSD (Si Strip Detector) developed for SDC experiment of SSC project. (See Reference)
s
Specifications
Parameter
P (stereo) side
N (axial) side
Unit
Chip size
60.0 34.1mm
Active area
58.8 32.7
mm
Thickness
300 15
m
Readout (bias) method
AC (Poly-Si)
AC (Poly-Si)
-
Strip pitch
50 (10 mrad titled)
50
m
Number of strips
640 + 28 (dummy)
640 + 14 (dummy)
-
Number of readout strips
640 + 28 (dummy)
640 + 14 (dummy)
-
Strip width
12
12
m
Readout AL width
6
6
m
Passivation
SiO
2
SiO
2
-
Supply
Chip only
-
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Full depletion voltage
Vfd
-
-
80
V
Breakdown voltage
V
BR
150
-
-
V
Leakage current
-
at Vfd, total
-
-
2000
nA
P (stereo) side
N (axial) side
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Bias resistance
-
0.3
-
0.7
0.3
-
0.7
M
Coupling capacitance
-
f=10 kHz
-
60
-
-
60
-
pF
Breakdown voltage of
coupling capacitor
-
100
-
-
100
-
-
V
Load capacitance
-
at Vfd
f=1 MHz
-
10
-
-
13
-
pF
Number of NG channel
-
-
-
19
-
-
19
-
Si strip detector
S6935
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
DICING LINE CENTER
825
350
57650
350
825
600
597.5
(4 ) P BIAS PAD 140 135
(1310 ) READOUT PAD 142 54
10 mrad
50
(
STRIP &
READOUT
PITCH
)
UP EDGE
DICING LINE CENTER
825
350
57650
350
825
600
597.5
725
(4 ) N BIAS PAD 140 135
(1308 ) READOUT PAD 142 46
50
(
STRIP &
READOUT PITCH
)
UP EDGE
s
Details of readout portion (unit: m)
Cat. No. KSPD1048E01
Apr. 2001 DN
N (axial) side
P (stereo) side
s Reference
T. Ohsugi, et al., "Double-sided microstrip sensors for the barrel of the SDC silicon tracker",
Nucl. Instr. Meth. A342 (1994) 16-21
KSPDA0138EA
KSPDA0139EA
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