Features
l Large area
l Low noise
l Low dark current, excellent bias voltage tolerance
l High radiation tolerance
l 2-D position detection
(double-sided and double-metal readout)
l Suitable for ladder assembly
Applications
l Tracking detector in high energy physics experiment:
collider experiment, fix target experiment
l Charged particle position detection
l X-ray detection
S S D
Si strip detector
AC-coupled double-sided Si strip detector for particle tracking
S6936 series
S6936 series is SSD (Si Strip Detector) developed for DELPHI project of CERN. (See Reference)
s
Specifications
Parameter
P side
N side
Unit
Chip size
57.5 33.5
mm
Active area
54.5 32.025
53.76 32.04
mm
Thickness
300 15
m
Readout (bias) method
AC (Poly-Si)
AC (Poly-Si)
-
Strip pitch
25
42
m
Number of strips
1281
1280
-
Number of readout strips
641
640 (2 strips ganging) *
-
Strip width
8
14
m
Readout AL width
8
8
m
DML insulator material, thickness
-
SiO
2
, 5
m
DML trace AL pitch, width
-
48, 8
m
Passivation
SiO
2
SiO
2
-
Supply
Chip only
-
* Method of 2 strips ganging
S6936 : (1, 2), (3, 4), (5, 6), (1277, 1278), (1279, 1280)
S6936-01: (1, 641), (2, 642), (3, 643), (639, 1279), (640, 1280)
s
Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Full depletion voltage
Vfd
-
-
80
V
Breakdown voltage
V
BR
100
-
-
V
Leakage current
-
at Vfd, total
-
-
2000
nA
P side
N side
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Bias resistance
-
10
-
-
20
-
-
M
Coupling capacitance
-
f=10 kHz
-
55
-
-
40
-
pF
Breakdown voltage of
coupling capacitor
-
20
-
-
100
-
-
V
Load capacitance
-
at Vfd
f=1 MHz
-
8
-
-
S6936 : 20
S6936-01: 23
-
pF
Number of NG channel
-
-
-
19
-
-
19
-
Si strip detector
S6936 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
2100
400 400 400
47900
2600
50
(
READOUT
PITCH
)
750
(4 ) P BIAS PAD 200 100
(5124 ) READOUT PAD 120 50
550
400 400 400
2100
LEFT EDGE
53718 (P42 1279)
830
50
(
READOUT
PAD
PITCH
)
775
(4 ) N BIAS PAD
200 100
(2560 ) READOUT PAD
120 50
450
200
200
200
501
790
200
200
200
790
501
LEFT EDGE
s
Details of readout portion (unit: m)
Cat. No. KSPD1049E01
Apr. 2001 DN
s Reference
V. Chabaud, et al., "The DELPHI silicon strip microvertex detector with double-sided readout",
Nucl. Instr. Meth. A368 (1996) 314-332
KSPDA0140EA
KSPDA0141EA
N side
P side
PDF 
ZIP