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Электронный компонент: S7018-1010

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S7018-1010 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image
sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.
By operating this image sensor in MPP mode, the dark signal can be exceedingly reduced. Moreover, use of the low-noise readout amplifier
enables low-light-level detection and long integration time, thus achieving a wide dynamic range.
S7018-1010 has an effective pixel size of 24 24 m and is available in active area of 24.576 (H) 24.576 (V) mm.
Features
Applications
I M A G E S E N S O R
CCD area image sensor
1024 1024 pixels, front-illuminated FFT-CCD
S7018-1010
I Selection and order guide
Type No.
Cooling
Number of
total pixels
Number of
active pixels
Active area
[mm (H) mm (V)]
S7018-1010
Non-cooled
1048 1032
1024 1024
24.576 24.576
A window material can be selected upon need, and the following is available.
Temporary window (standard) : expressed by N #
FOP: expressed by F #
# This should be added at the end of a type No. when ordered.
ex. S7018-1010N: temporary window
I General ratings
Parameter
Specification
CCD structure
Full frame transfer
Fill factor
100 %
Number of active pixels
1024 (H) 1024 (V)
Pixel size
24 (H) 24 (V) m
Active area
24.576 (H) 24.576 (V) mm
Vertical clock phase
2 phase and 2line
Horizontal clock phase
2 phase and 2line
Output circuit
Bi-directional readout
Two-stage MOSFET source follower with load resistance for high speed readout
One-stage MOSFET source follower for low noise readout
Package
48 pin metal package
Window
Temporary window
FOP is available upon request
G 1024 (H) 1024 (V) pixel format
G Pixel size: 24 24 m
G 100 % fill factor
G Wide dynamic range
G Low dark current
G Low readout noise
G MPP operation
G Astronomy
G Scientific measuring instrument
G Fluorescence spectrometer
G Raman spectrophotometer
G Optical and spectrophotometric analyzer
G For low-light-level detection requiring
1
CCD area image sensor
S7018-1010
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Operating temperature
Topr
-50
-
+30
C
Storage temperature
Tstg
-50
-
+70
C
OD voltage
V
ODA
, V
ODB
-0.5
-
+25
V
RD voltage
V
RDA
, V
RDB
-0.5
-
+18
V
ISV voltage
V
ISV
-0.5
-
+18
V
IGV voltage
V
IG1V
, V
IG2V
-10
-
+15
V
SG voltage
V
SGA
, V
SGB
-10
-
+15
V
OG voltage
V
OGA
, V
OGB
-10
-
+15
V
RG voltage
V
RGA
, V
RGB
-10
-
+15
V
TG voltage
V
TGA
, V
TGB
-10
-
+15
V
Vertical clock voltage
V
P1AV
, V
P2AV
V
P1BV
, V
P2BV
V
P1CV
, V
P2CV
V
P1DV
, V
P2DV
-10
-
+15
V
Horizontal clock voltage
V
P1AH
, V
P2AH
V
P3AH
, V
P4AH
V
P1BH
, V
P2BH
V
P3BH
, V
P4BH
-10
-
+15
V
I Operating conditions (MPP mode, Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
High speed readout
12
15
18
Output transistor
drain voltage
Low noise readout
V
ODA
, V
ODB
18
20
22
V
Reset drain voltage
V
RDA
, V
RDB
11.5
12
12.5
V
Output gate voltage
V
OGA
, V
OGB
1
3
5
V
Substrate voltage
V
SS
-
0
-
V
Test point (vertical input source)
V
ISV
-
V
RDA
V
RDB
-
V
Test point (vertical input gate)
V
IG1V,
V
IG2V
-8
0
-
V
High
V
P1AVH
, V
P2AVH
V
P1BVH
, V
P2BVH
V
P1CVH
, V
P2CVH
V
P1DVH
, V
P2DVH
4
6
8
Vertical shift register
clock voltage
Low
V
P1AVL
, V
P2AVL
V
P1BVL
, V
P2BVL
V
P1CVL
, V
P2CVL
V
P1DVL
, V
P2DVL
-9
-8
-7
V
High
V
P1AHH
, V
P2AHH
V
P3AHH
, V
P4AHH
V
P1BHH
, V
P2BHH
V
P3BHH
, V
P4BHH
4
6
8
Horizontal shift register
clock voltage
Low
V
P1AHL
, V
P2AHL
V
P3AHL
, V
P4AHL
V
P1BHL
, V
P2BHL
V
P3BHL
, V
P4BHL
-9
-8
-7
V
High
V
SGAH
, V
SGBH
4
6
8
Summing gate voltage
Low
V
SGAL
, V
SGBL
-9
-8
-7
V
High
V
RGAH
, V
RGBH
4
6
8
Reset gate voltage
Low
V
RGAL
, V
RGBL
-9
-8
-7
V
High
V
TGAH
, V
TGBH
4
6
8
Transfer gate voltage
Low
V
TGAL
, V
TGBL
-9
-8
-7
V
2
CCD area image sensor
S7018-1010
3
I Electrical characteristics (Ta=25 C)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
High speed readout
-
-
10,000
Signal output requency Low noise readout
fc
-
-
80
2,000
kHz
High speed readout
-
-
10,000
Reset clock frequency
Low noise readout
frg
-
-
80
2,000
kHz
Vertical shift register capacitance
C
P1AV
, C
P2AV
C
P1BV
, C
P2BV
C
P1CV
, C
P2CV
C
P1DV
, C
P2DV
-
-
22,000
-
pF
Horizontal shift register capacitance
C
P1AH
, C
P2AH
C
P3AH
, C
P4AH
C
P1BH
, C
P2BH
C
P3BH
, C
P4BH
-
-
90
-
pF
Summing gate capacitance
C
SGA
, C
SGB
-
-
5
-
pF
Reset gate capacitance
C
RGA
, C
RGB
-
-
5
-
pF
Transfer gate capacitance
C
TGA
, C
TGB
-
-
150
-
pF
Transfer efficiency
CTE
*
1
0.99995
0.99999
-
-
High speed readout
5
8
11
DC output level
Low noise readout
V
out
*
2
12
15
18
V
High speed readout
-
500
-
Output impedance
Low noise readout
Zo
*
2
-
3 k
-
W
High speed readout
-
60
-
Power dissipation
Low noise readout
P
*
2,
*
3
-
15
-
mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: For high speed readout, V
OD
=15 V. For low noise readout, V
OD
=20 V, Load resistance=22 kW.
*3: Power dissipation of the on-chip amplifier.
I Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
-
-
Fw Sv
-
V
Vertical
150
300
-
Full well capacity
Horizontal
Fw
-
200
450
-
ke-
High speed readout
1.2
1.6
-
CCD conversion
efficiency
Low noise readout
Sv
*
4
1.3
1.7
-
V/e-
25 C
-
1,000
3,000
Dark current
(MPP mode)
0 C
DS
*
5
-
50
150
e-/pixel/s
High speed readout
-
60
120
Readout noise
Low noise readout
Nr
*
6
-
6
12
e-rms
Dynamic range (area scanning)
DR
*
7
12,500
50,000
-
-
Spectral response range
l
-
-
400 to
1,100
-
nm
Photo response non-uniformity
PRNU
*
8
-
-
10
%
Point defects
*
9
-
-
10
Cluster defects
*
10
-
-
0
Blemish
(grade: 0 *
12
)
Column defects
-
*
11
-
-
0
-
*4: For high speed readout, V
OD
=15 V. For low noise readout, V
OD
=20 V, Load resistance=22 kW.
*5: Dark current nearly doubles for every 5 to7 C increase in temperature.
*6: For high speed readout, -40 C, operating frequency is 1 MHz.
For low noise readout, -40 C, operating frequency is 80 kHz.
*7: DR=Fw / Nr, In case of low noise readout
*8: Measured at half of the full well capacity. PRNU (%)=noise / signal 100, noise: fixed pattern noise (peak to peak)
*9: White spots > 3 % of full well at 0 C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels
*10: continuous 2 to 9 point defects
*11: continuous > 10 point defects
*12: Please make contact with sales office about other grades.
CCD area image sensor
S7018-1010
I Pin connections
Pin No.
Symbol
Description
Remark
1
NC
-
-
2
NC
-
-
3
NC
-
-
4
P1CV
CCD vertical register clock C-1
Same timing as P1AV
5
P2CV
CCD vertical register clock C-2
Same timing as P2AV
6
P1AV
CCD vertical register clock A-1
-
7
P2AV
CCD vertical register clock A-2
-
8
TGA
Transfer gate A
Same timing as P2AV
9
RDA
Reset drain A
-
10
ODA
Output transistor drain A (high speed readout)
-
11
OSA
Output transistor source A (high speed readout)
-
12
RGA
Reset gate A
-
13
OGA
Output gate A
-
14
SGA
Summing gate A
-
15
P4AH
CCD horizontal register clock A-4
-
16
P3AH
CCD horizontal register clock A-3
-
17
P2AH
CCD horizontal register clock A-2
-
18
P1AH
CCD horizontal register clock A-1
-
19
NC
-
-
20
P4BH
CCD horizontal register clock B-4
Same timing as P4AH
21
P3BH
CCD horizontal register clock B-3
Same timing as P3AH
22
P2BH
CCD horizontal register clock B-2
Same timing as P2AH
23
P1BH
CCD horizontal register clock B-1
Same timing as P1AH
24
SGB
Summing gate B
-
25
OGB
Output gate B
Shorted to OGA
26
RGB
Reset gate B
Shorted to RGA
27
OSB
Output transistor source B (low noise readout)
-
28
ODB
Output transistor drain B (low noise readout)
-
29
RDB
Reset drain B
Shorted to RDA
30
TGB
Transfer gate B
Shorted to TGA
31
P2BV
CCD vertical register clock B-2
Shorted to P2AV
32
P1BV
CCD vertical register clock B-1
Shorted to P1AV
33
P2DV
CCD vertical register clock D-2
Shorted to P2CV
34
P1DV
CCD vertical register clock D-1
Shorted to P1CV
35
NC
-
-
36
NC
-
-
37
NC
-
-
38
NC
-
-
39
NC
-
-
40
NC
-
-
41
NC
-
-
42
NC
-
-
43
SS
Substrate (GND)
-
44
NC
-
-
45
NC
-
-
46
ISV
Test point (vertical input source)
shorted to RDA
47
IG2V
Test point (vertical input gate-2)
shorted to 0 V
48
IG1V
Test point (vertical input gate-1)
shorted to 0 V
4
CCD area image sensor
S7018-1010
50
40
30
20
10
0
400
500
600
700
WAVELENGTH (nm)
800
900
1000 1100 1200
QUANTUM EFFICIENCY (%)
(Typ. Ta=25 C)
KMPDB0051EA
I Spectral response without window
0
400
500
600
700
800
WAVELENGTH (nm)
TRANSMITT
ANCE (%)
900
1000 1100 1200
(Typ. Ta=25 C)
10
20
30
40
50
60
70
80
90
100
FOP
KMPDB0109EA
KMPDA0100EA
I Dimensional outline (unit: mm)
ACTIVE AREA 24.576
33.53
36.07
PIN No. 1 *
1
48 47
2
3
OPEN AREA 28.0
A
CTIVE AREA 24.576
R1.52
R2.79
OPEN AREA 28.0
30.48
5.21
7.49
2.54
0.46
33.53
36.07
30.48
0.56
TEMPORARY WINDOW
1.02
2.54
CAP
* PIN No. 1: BROWN GLASS SEAL
PIN No. 2 to 48: GREEN GLASS SEAL
I Spectral transmittance characteristic
of window material
5