Features
l Surface-mount plastic package (9 9.6 mm)
l Large active area: 5 5 mm
l Operating temperature range: -40 to +100 C
Storage temperature range : -40 to +125 C
l High sensitivity: 0.72 A/W (=960 nm)
l Visible-cut type (S7478-01) available
Applications
l Automobile sensor
(Vehicle and traffic information system, laser radar,
front window frost sensor, rain sensor)
l Spatial light transmission
P H O T O D I O D E
Si PIN photodiode
Large active area (5 5 mm) photosensor with high reliability
S7478 series
S7478 series is a PIN photodiode having a large active area (5 5 mm) and surface-mount flat package with leads. S7478 series offers high
sensitivity and improved characteristics in temperature cycle tests.
s
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.20
V
Operating temperature
Topr
-40 to +100
C
Storage temperature
Tstg
-40 to +125
C
s
Electrical and optical characteristics (Ta=25 C)
S7478
S7478-01
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
-
320 to
1100
-
-
780 to
1100
-
nm
Peak sensitivity wavelength
p
-
960
-
-
960
-
nm
Photo sensitivity
S
=p
0.6
0.72
-
0.6
0.7
-
A/W
Short circuit current
Isc
100 lx , 2856 K
-
26
-
-
16
-
A
Dark current
I
D
V
R
=10 V
-
0. 4
5
-
0. 4
5
nA
Cut-off frequency
fc
V
R
=10 V, R
L
=50
-3 dB *
10
20
-
8
15
-
MHz
Terminal capacitance
Ct
V
R
=10 V, f=1 MHz
-
40
80
-
40
80
pF
* S7478 : =780 nm
S7478-01: =850 nm
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si PIN photodiode
S7478 series
Cat. No. KPIN1034E02
Mar. 2001 DN
s Spectral response
KPINB0190EA
s Dark current vs. reverse voltage
KPINB0191EA
s Terminal capacitance vs. reverse voltage
KPINB0192EA
200
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
400
600
800
1000
1200
(Typ. Ta=25 C)
S7478
S7478-01
QE=100 %
0.01
REVERSE VOLTAGE (V)
DARK CURRENT
10 pA
100 pA
1 nA
0.1
1
10
100
(Typ. Ta=25 C)
0.1
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
1 pF
100 pF
10 pF
1 nF
1
10
100
(Typ. Ta=25 C)
s Dimensional outline (unit: mm)
9.0*
(6
)
0.4
1.5 0.4
1.5 0.4
INDEX
(C0.7)
0.7 0.3
0.2
(2 ) 10
(2 ) 10
0.7 0.3
0.1 0.1
12.0 0.3
2.54
2.54
9.6*
0.55
0.85
1.5
(2
) 10
(2
) 10
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
5 5
ANODE
CATHODE
NC
NC
CATHODE
NC
Tolerance unless otherwise noted: 0.1
Chip position accuracy
with respect to the
package dimensions marked *
X, Y
0.2
2
KPINA0062EA
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