Features
l Spectral response analogous to CIE luminous spectral
efficiency
Spectral response range: 480 to 660 nm
Peak sensitivity wavelength: 550 nm
l Ceramic package for reliability
l Active area: 2.4 2.8 mm
l High-speed response: 0.5 s (V
R
=0 V, R
L
=1 k
)
l fs value: 8 % Typ. (vertical light input)
Applications
l Illuminometer
l Luminance meter
P H O T O D I O D E
Si photodiode
Photodiode with sensitivity close to the human eye
S7686
S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (luminous spectral efficiency)
than our conventional visual-compensated sensors (S1133, etc.).
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.
10
V
Operating temperature
Topr
-10 to +60
C
Storage temperature
Tstg
-20 to +70
C
I Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
480 to 660
-
nm
Peak sensitivity wavelength
lp
-
550
-
nm
Photo sensitivity
S
l=lp
-
0.38
-
A/W
Short circuit current
Isc
100 lx, 2856 K
-
0.45
-
A
Dark current
I
D
V
R
=1 V
-
2
20
pA
Rise time
tr
V
R
=0 V, R
L
=1 kW
-
0.5
-
s
Terminal capacitance
Ct
V
R
=0 V, f=10 kHz
-
200
-
pF
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Si photodiode
S7686
Cat. No. KSPD1040E02
Oct. 2002 DN
8.0
CATHODE
TERMINAL MARK
6.0
0.6
9 1
1.5 0.2
5.0 0.2
0.1
+0
- 0.25
+
0.1
-
0.3
ACTIVE AREA
2.8 2.4
PHOTOSENSITIVE
SURFACE
FILTER
0.45
LEAD
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
800
1000
1200
(Typ. Ta=25 C)
0.1
0.2
0.3
0.4
0.6
0.5
QE=100 %
I Spectral response
I Spectral response (relative value)
KSPDB0133EB
S7686
(Typ. Ta=25 C)
CIE LUMINOUS
SPECTRAL EFFICIENCY
300
0
10
20
30
40
50
60
70
80
90
100
400
500
600
WAVELENGTH (nm)
RELATIVE SENSITIVITY (%)
700
800
900
KSPDB0092EB
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse voltage
I
I
I
I
I Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.15)
KSPDA0089EA
KSPDB0144EA
KSPDB0145EA
0.1
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
10 pF
1 nF
100 pF
10 nF
1
10
(Typ. Ta=25 C)
2
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