P H O T O D I O D E
PRELIMINARY DATA
Sep. 2000
S7911, S7912
Si PIN photodiode
High-speed response at low reverse voltage
Features
l
High-speed response at low reverse voltage
S7911: fc=2 GHz (V
R
=2 V)
S7912: fc=1.5 GHz (V
R
=2 V)
l
Low terminal capacitance
S7911: Ct=0.45 pF (V
R
=2 V)
S7912: Ct=0.85 pF (V
R
=2 V)
l
3-pin TO-18 package
Applications
l
Optical fiber communications
s
Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
20V
Operating temperature
Topr
-40 to +100
C
Storage temperature
Tstg
-55 to +125
C
s
Specifications (Ta=25 C)
S7911
S7912
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Active area
A
-
0.1
-
-
0.2
-
mm
Spectral response range
-
320 to 1000
-
-
320 to 1000
-
nm
Peak sensitivity wavelength
p
-
740
-
-
740
-
nm
Photo sensitivity
S
=
p
-
0.47
-
-
0.47
-
A/W
Dark current
I
D
V
R
=2 V
-
1
100
-
1
100
pA
Cut-off frequency
fc
V
R
=2 V, R
L
=50
,
-3 dB
-
2
-
-
1.5
-
GHz
Terminal capacitance
Ct
V
R
=2 V, f=1 MHz
-
0.45
-
-
0.85
-
pF
Si
PIN photodiode
S7911, S7912
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2000 Hamamatsu Photonics K.K.
Cat. No. KPIN1041E01
Sep. 2000 DN
0.1
0
200
400
600
800
1000
0.3
0.2
(Typ. Ta =25 C)
0.4
0.5
0.6
0.7
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
10 fA
100 fA
1 pA
10 pA
0.01
0.1
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
10
1
100
S7912
S7911
100 fF
1 pF
10 pF
0.1
1
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
10
100
S7911
S7912
100 MHz
1 GHz
10 GHz
0.1
1
REVERSE VOLTAGE (V)
CUT-OFF FREQUENCY
10
100
S7912
S7911
(Typ. Ta=25 C,
R
L
=50 W)
0.45
LEAD
The glass window does not protrude
beyond the upper edge of the cap,
but may be a maximum of 0.1 mm
below the upper edge of the cap.
CASE
2.54 0.2
13.5
2.8
3.6 0.2
4.7 0.1
5.4 0.2
WINDOW
3.0 0.1
PHOTOSENSITIVE
SURFACE
s
Spectral response
KPINB0137EA
KPINB0138EA
KPINA0071EA
s
Dimensional outline (unit: mm)
KPINB0139EA
KPINB0140EA
s
Dark current vs. reverse voltage
s
Terminal capacitance vs. reverse voltage
s
Cut-off frequency vs. reverse voltage
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