S8377/S8378 series

Features

l Wide active area

Pixel pitch: 50 祄 (S8377 series)

25 祄 (S8378 series)

Pixel height: 0.5 mm

l On-chip charge amplifier with excellent input/output

characteristics

l Built-in timing generator allows operation with only

start and clock pulse inputs

l Maximum operating clock frequency: 500 kHz

l Spectral response range: 200 to 1000 nm

l Single 5 V power supply operation

l 8-pin small package, S8377 and S8378 series are pin

compatible.

Applications

l Image input devices

l Optical sensing devices

I M A G E S E N S O R

CMOS linear image sensor

Built-in timing generator and signal processing circuit; single 5 V supply operation

S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate from
single 5 V supply with only start and clock pulse inputs, making them easy to use. The signal processing circuit has a charge amplifier with
excellent input/output characteristics and allows signal readout at 500 kHz.
The photodiodes of S8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 祄. The photodiodes of S8378 series also
have a height of 0.5 mm but are arrayed at a spacing of 25 祄. The photodiodes are available in 3 different pixel quantities for each series: 128
(S8377-128Q), 256 (S8377-256Q, S8378-256Q), 512 (S8377-512Q, S8378-512Q) and 1024 (S8378-1024Q). Quartz glass is the standard window
material.

I Absolute maximum ratings

Parameter

Symbol

Value

Unit

Supply voltage

Vdd

-0.3 to +10

Gain selection terminal voltage

-0.3 to +10

Clock pulse voltage

V (CLK)

-0.3 to +10

Start pulse voltage

V (ST)

-0.3 to +10

Operating temperature *

Topr

-20 to +60

癈

Storage temperature

Tstg

-20 to +80

癈

*1: No condensation

I Shape specifications

Parameter

S8377-

128Q

S8377-

256Q

S8377-

512Q

S8378-

256Q

S8378-

512Q

S8378-

1024Q

Unit

Number of pixels

128

256

512

256

512

1024

Package length

15.8

22.2

35.0

15.8

22.2

35.0

Number of pins

Window material

Quartz

CMOS linear image sensor

S8377/S8378 series

WAVELENGTH (nm)

RELATIVE SENSITIVITY (%)

200

400

1200

(Typ. Ta=25 癈)

100

1000

800

600

I Spectral response (typical example)

KMPDB0213EA

I Recommended terminal voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

Vdd

4.75

5.25

High gain

0.4

Gain selection
terminal voltage

Low gain

Vdd-0.25

Vdd

Vdd+0.25

High

Vdd-0.25

Vdd

Vdd+0.25

Clock pulse voltage

Low

V (CLK)

0.4

High

Vdd-0.25

Vdd

Vdd+0.25

Start pulse voltage

Low

V (ST)

0.4

I Electrical characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Clock pulse frequency *

f (CLK)

0.1

500

kHz

Output impedance

Power consumption

*2: Ta=25 癈, Vdd=5 V, V (CLK)=V (ST)=5 V, Vg=5 V (Low gain)

I Electrical and optical characteristics [Ta=25 癈, Vdd=5 V, V (CLK)=V (ST)=5 V]

S8377 series

S8378 series

Parameter

Symbol

Min.

Typ.

Max.

Min.

Typ.

Max.

Unit

Spectral response range

200 to 1000

Peak sensitivity wavelength

500

High gain

Photo sensitivity

Low gain

4.4

V/lx

�

Dark current

0.08

0.24

0.04

0.12

Saturation charge

Qsat

12.5

6.3

High gain

0.5

F e e d b a c k c a p acitanc e *

of charg e a m plifier

Low gain

2.5

High gain

8.0

Dark output voltage *

Low gain

1.6

4.8

1.6

4.8

High gain

2.8

3.2

2.8

3.2

Saturation output
voltage

Low gain

Vsat

2.1

2.5

2.1

2.5

High gain

145

Saturation exposure *

Low gain

Esat

570

mlx

�

0.1 (-128 Q)

0.2 (-256 Q)

0.15 (-256 Q)

0.3 (-512 Q)

Low gain

0.2 (-512 Q)

0.4 (-1024 Q)

0.4 (-128 Q)

0.9 (-256 Q)

0.5 (-256 Q)

1.3 (-512 Q)

Readout noise

High gain

0.8 (-512 Q)

2.1 (-1024 Q)

mV-rms

Photo response non-uniformity *

PRNU

�3

*3: Vg=5 V (Low gain), Vg=0 V (High gain)
*4: Storage time Ts=100 ms
*5: Measured with a tungsten lamp of 2856 K.
*6: Uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation
exposure level as follows:
PRNU=

X/X � 100 (%)

Where X is the average output of all pixels and

X is the difference from the maximum or minimum output and X.

CMOS linear image sensor

S8377/S8378 series

I Timing chart

KMPDC0149EA

Parameter

Symbol

Min.

Typ.

Max.

Unit

Start pulse width

tpw (ST)

600

Start pulse rise and fall time

tr (ST), tf (ST)

Clock pulse width

tpw (CLK)

1000

Clock pulse rise and fall time

tr (CLK), tf (CLK)

Clock pulse-start pulse timing

t (CLK-ST)

400

Video delay time 1

tvd1

300

Video delay time 2

tvd2

150

STORAGE TIME

CLK

Video

CLK

Video

EOS

n-1

tf (ST)

t (CLK-ST)

tpw (CLK)

tvd1

tr (ST)

tr (CLK)

tf (CLK)

tvd2

tpw (ST)

* The storage time is determined by the start pulse intervals. However, since the charge

storage of each pixel is carried out between the signal readout of that pixel and the next
signal readout of the same pixel, the start time of charge storage differs depending on each
pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is
completed.

Vout

CMOS linear image sensor

S8377/S8378 series

I Block diagram

KMPDC0150EA

I Pin connections

Pin No.

Symbol

Name of pin

Function

CLK

Clock pulse

Pulse input to operate the shift register. The readout time (data rate)
equals the clock pulse frequency.

Start pulse

Starts the shift register operation. The start pulse intervals determine the
signal storage time.

Gain selection voltage

Input of 5 V selects "Low gain" and 0 V selects "High gain"

Vdd

Supply voltage

5 V Typ.

Open

Video

Signal output. Positive-going output from 1 V

EOS

End of scan

Negative-going signal output obtained at a timing following the last pixel
scan.

Vss

Ground

CHARGE

AMP

CLAMP

CIRCUIT

DIGITAL SHIFT REGISTER

ADDRESS SWITCH

PHOTODIODES

TIMING GENERATOR

N-1

CLK

Vdd

Vss

EOS

Video

CLK

Vdd

Vss

EOS

Video

KMPDC0151EA

CMOS linear image sensor

S8377/S8378 series

I Dimensional outlines (unit: mm)

KMPDA0150EB

S8377-128Q, S8378-256Q

S8377-256Q, S8378-512Q

KMPDA0151EB

KMPDA0152EB

S8377-512Q, S8378-1024Q

0.51

7.62

2.54

3.0

ACTIVE AREA
6.4 � 0.5

7.87

3.935 � 0.2

3.2 � 0.3

15.8

* Optical distance from the outer surface

of the quartz window to the chip surface

7.62

1.3 � 0.2 *

0.25

CHIP

3.0

7.87

3.935 � 0.2

ACTIVE AREA
12.8 � 0.5

6.4 � 0.3

22.2

7.62

2.54

0.51

* Optical distance from the outer surface

of the quartz window to the chip surface

7.62

1.3 � 0.2 *

0.25

CHIP

3.0

7.87

3.935 � 0.2

ACTIVE AREA
25.6 � 0.5

12.8 � 0.3

35.0

7.62

2.54

0.51

* Optical distance from the outer surface

of the quartz window to the chip surface

7.62

1.3 � 0.2 *

0.25

CHIP

CMOS linear image sensor

S8377/S8378 series

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv鋑en 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. �2002 Hamamatsu Photonics K.K.

Cat. No. KMPD1066E02
Apr. 2002 DN

I Handling precautions
(1) Electrostatic countermeasures

Although the CMOS linear image sensor is protected against static electricity, proper electrostatic countermeasures must be
provided to prevent device destruction by static electricity. For example, such measures include wearing non-static gloves
and clothes, and grounding the work area and tools.

(2) Incident window

If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be
taken in handling the window. Avoid touching it with bare hands.
The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window
surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft
paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface.

(3) UV exposure

The CMOS linear image sensor is designed to suppress performance deterioration due to UV exposure. Even so, avoid
unnecessary UV exposure to the device.
Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass.

(4) Operating and storage environments

Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively
high temperature and humidity may cause variations in performance characteristics and must be avoided.

协谢械泻褌褉芯薪薪褘泄 泻芯屑锌芯薪械薪褌: S8378-512Q

协谢械泻褌褉芯薪薪褘泄泻芯屑锌芯薪械薪褌: S8378-512Q