P H O T O D I O D E
PRELIMINARY DATA
Jan. 2002
S8463
Si PIN photodiode
Miniature, thin plastic package photodiode
Features
l Clear plastic package: 3 4 1.3
t
mm
l Active area: 0.8 mm
l High sensitivity: 0.48 A/W Typ. (=780 nm)
l High-speed response: 200 MHz Typ. (V
R
=5 V)
Applications
l Front monitors for optical disk laser diodes
l Sensors for red laser diodes (650 nm) and near IR laser diodes
(780 nm)
s Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.20
V
Operating temperature
Topr
-25 to +85
C
Storage temperature
Tstg
-40 to +100
C
s Electrical and optical characteristics (Ta=25
C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
-
320 to 1060
-
nm
Peak sensitivity wavelength
p
-
900
-
nm
Photo sensitivity
S
=780 nm
0.43
0.48
-
A/W
Short circuit current
Isc
100 lx, 2856 K
0.55
0.7
-
A
Dark current
I
D
V
R
=5 V
-
0.01
1
nA
Terminal capacitance
Ct
V
R
=5 V, f=1 MHz
-
3
6
pF
Cut-off frequency
fc
V
R
=5 V, R
L
=50
-3 dB
100
200
-
MHz
1
Si PIN photodiode
S8463
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPIN1060E01
Jan. 2002 DN
4.0
2.54
3.4
3.9
3.8
(0.4)
(0.4)
3.0
2.4
1.5 0.2
2
3.0
0.05
1.3
0.45
0.75
0.15
2.8
2.9
3.0 0.3
0.45
0.35
4.2 0.2
(INCLUDING BURR)
ACTIVE AREA
0.8
3.2 0.2
(INCLUDING BURR)
4.0
CHIP POSITION ACCURACY
Tolerance unless otherwise
noted: 0.1, 2
Shared area indicates burr
.
2.0 0.2
PHOTOSENSITIVE
SURFACE
s Dimensional outline (unit: mm)
KPINA0087EA
s Spectral response
KPINB0247EA
0
0.1
0.2
0.3
0.4
0.6
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY
(A/W)
(Typ. Ta=25 C)
0.5
QE=100 %
s Dark current vs. reverse voltage
KPINB0248EA
100 fA
1 pA
10 pA
100 pA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
KPINB0249EA
10
100
1000
1
10
100
REVERSE VOLTAGE (V)
CUT-OFF FREQUENCY (MHz)
(Typ. Ta=25 C,
=780 nm, R
L
=50
)
KPINB0250EA
1 pF
10 pF
100 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
s Cut-off frequency vs. reverse voltage
s Terminal capacitance vs. reverse voltage
2
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