S8593 is a 2-D Si photodiode array formed by micro-machining techniques to provide exceptionally low cross-talk. (Patent pending)
P H O T O D I O D E
PRELIMINARY DATA
Jan. 2002
S8593
Si photodiode array
2-D photodiode array with low cross-talk
Features
l
Low cross-talk
l
5 5 element photodiode array
l
28-pin DIP ceramic package
l
Active area size: 1.3 1.3 mm [ (5 5 elements)]
Element pitch: 1.5 mm (XY directions)
Applications
l
Low-light-level detection
l
Spectrophotometers
l
Position detection
Patent Pending
s Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max.5
V
Operating temperature
Topr
-20 to +60
C
Storage temperature
Tstg
-20 to +80
C
s Electrical and optical characteristics (Ta=25
C, unless otherwise noted, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
-
320 to 1000
-
nm
Peak sensitivity wavelength
p
-
720
-
nm
Photo sensitivity
S
=410 nm
-
0. 28
-
A/W
Dark current
I
D
V
R
=10 mV
-
1
20
pA
Terminal capacitance
Ct
V
R
=0 V, f=10 kHz
-
80
-
pF
Rise time
tr
V
R
=0 V, R
L
=1 k
-
0.2
-
s
1
Si photodiode array
S8593
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KMPD1064E01
Jan. 2002 DN
P 2.54 13 = 33.02
ACTIVE AREA
35.56 0.4
15.49 0.25
15
16
27
2
1
14
13
2.16 0.25
2.54
0.46
28
(4.5)
GLASS
0.5
15.10 0.25
PIN No.
15.24 0.3
(SPECIFIED AT THE LEAD ROOT)
1.21 0.2
FROM GLASS UPPER SIDE
P1.5
0.2
0.25
P1.5 4
DETAILS OF ACTIVE AREA
P1.5
4
PHOTOSENSITIVE
SURFACE
a1 a2 a3 a4 a5
b1 b2 b3 b4 b5
c1 c2 c3 c4 c5
d1 d2 d3 d4 d5
e1 e2 e3 e4 e5
GLASS
( 15.0)
( 1.3)
s
Dimensional outline (unit: mm)
s
Spectral response
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO SENSITIVITY
(A/W)
800
400
200
600
0
0.1
0.2
0.6
0.5
0.4
0.3
1000
1200
QE=100 %
s
Dark current vs. reverse voltage
s
Terminal capacitance vs. reverse voltage
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
TERMINAL CAPACITANCE
10
0.1
1
1 pF
1 nF
10 pF
10 nF
100 pF
100
s
Cross-talk characteristic
POSITION ON PHOTOSENSITIVE SURFACE (mm)
(Ta=25 C,
=680 nm, spot light size: 7 m (1/e
2
), V
R
=0 V,
Terminals of elements not under measurement are left open.)
RELATIVE SENSITIVITY (%)
+1
+2
0
-2
-1
0
100
80
60
20
120
40
S8593
CONVENTIONAL
TYPE
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
10
0.1
0.01
1
100 fA
1 pA
10 pA
1 nA
100 pA
100
KMPDB0198EA
KMPDB0202EA
KMPDB0203EA
KMPDB0204EA
KMPDA0117EA
s Pin connection
Pin No.
Ele ment No.
Pin No.
Ele ment No.
1
Cathode
15
Cathode
2
c1
16
c5
3
d1
17
b5
4
e1
18
a5
5
c2
19
c4
6
e2
20
a4
7
d2
21
b4
8
e3
22
a3
9
e4
23
a2
10
e5
24
a1
11
d3
25
b3
12
d5
26
b1
13
d4
27
b2
14
c3
28
NC
2
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