S8656 and S8657 are large area, low-noise FT-CCD area image sensors developed for direct X-ray detection. These sensors provide extremely
low noise and a thick depletion layer impossible to obtain with conventional CCD sensors and therefore deliver an excellent X-ray energy
resolution of 150 eV or less (FWHM of Fe-55 energy spectrum) when cooled to about -100 C.
These CCD sensors were designed and developed by a joint effort with Osaka University and Kyoto University under a project entitled
"Development of small pixel CCD for X-ray detection" and adapted as Core Research for Evolutional Science Technology (CREST) in 1995.
I M A G E S E N S O R
PRELIMINARY DATA
Jan. 2002
S8656, S8657
CCD area image sensor
CCD for direct X-ray detection (joint development with CREST *
1
)
Features
l FT (Frame Transfer) CCD
l Buttable structure on 3 sides
Dead space: within 150 m from chip edge
l Bi-directional readout
l Readout noise: 4 e-rms Typ.
l FWHM: 150 eV or less (Fe-55 radioisotope) *
2
l Depletion layer thickness: Up to 30 m or more *
2
Applications
l X-ray spectroscopy
l X-ray crystallography
l X-ray astronomy
Buttable arrangement example of S8657
PHOTON ENERGY (keV)
(Typ. T= -100 C)
QUANTUM EFFICIENCY (%)
1
1
100
10
10
PHOTON COUNTING MODE
FLUX MODE
0
100
200
300
400
500
0
1
2
3
4
5
6
7
8
PHOTON ENERGY (keV)
NUMBER OF COUNT
FWHM=140 eV
(T= -70 C)
s X-ray spectrum measurement example using
Fe-55 radioisotope *
3
s Quantum efficiency vs. photon energy *
3
KMPDB0197EA
KMPDB0154EA
*1: Core Research for Evolutional Science Technology (Strategic Basic Research Promotion Project by Japan Science and
Technology Corporation)
*2: Depends on the research & development results of the "Development of small pixel CCD for X-ray detection" project.
*3: Reference: Study on satellite-borne X-ray CCD (I); Master's degree thesis, 1996, Department of Earth & Space Science,
Graduate School of Science, Osaka University
s Selection guide
Type No.
Number of active pixels
(H V)
Pixel size
[m (H) m (V)]
Active area
[mm (H) mm (V)]
Chip size
[mm (H) mm (V)]
S8656
1024 1024
24 24
24.576 24.576
S8657
2000 1800
12 12
24.000 21.600
24.87 44.4
1
CCD area image sensor
S8656, S8657
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KMPD1055E01
Jan. 2002 DN
10.50 0.10
100
26.50 0.10
7.48 0.10
7.48 0.10
26.50 0.10
CHIP SIZE 44.40
63.00 0.05
1.50
10.50 0.10
CHIP SIZE 24.87
4.00 0.03
24.97 0.05
FPC
R0.3
ALUMINIUM NITRIDE
CONNECTOR:
KYOCERA ELCO 6212040
FPC
PHOTOSENSITIVE
SURFACE
ACTIVE AREA
2
29.45 0.10
20.4
KMPDA0139EA
s Dimensional outline (unit: mm)
2
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
S8656
S8657
Parameter
Symbol Remark
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
-
-
Fw Sv
-
-
Fw Sv
-
V
Vertical
-
300
-
-
60
-
Full well capacity
Horizontal
Fw
-
-
360
-
-
72
-
ke
-
CCD node sensitivity
Sv
*
1
-
2.5
-
-
2.8
-
V/e
-
Dark current (MPP mode)
Element
temperature:
-70 C
DS
*
2
-
0.03
-
-
0.015
-
e
-
/pixel/s
Readout noise
Nr
*
3
-
4
8
-
4
8
e
-
rms
Dynamic range (area scanning)
DR
*
4
-
75,000
-
-
15,000
-
-
Spectral energy range (X-ray)
E
-
0.5
10
-
0.5
10
-
keV
*1: V
OD
=20 V, load resistance=22 k
.
*2: Dark current nearly doubles for every 5 to 7 C increase in temperature.
*3: -70 C, operating frequency is 80 kHz.
*4: Dynamic range=Full well capacity/Readout noise
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