Features
Applications
P H O T O D I O D E
Si PIN photodiode
l Clear plastic package with 1.7 mm lens
l High-speed response S8359: fc=200 MHz Typ. (V
R
=5 V)
S8701: fc=550 MHz Typ. (V
R
=2 V)
l High sensitivity
l Laser diode monitor (high-speed APC) in laser disk equipment
l Spatial light transmission
l Optical communications
High-speed photodiode with lens
S8359 and S8701 are Si PIN photodiodes molded into a clear plastic package with a
1.7 mm lens.
S8359, S8701
PRELIMINARY DATA
Aug. 2002
1
1
I Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
V
R
Max
10
V
Operating temperature
Topr
-25 to +85
C
Storage temperature
Tstg
-40 to +100
C
I Electrical and optical characteristics (Ta=25 C)
S8359
S8701
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
l
-
320 to
1060
-
-
320 to
1000
-
nm
Peak sensitivity wavelength
lp
-
900
-
-
760
-
nm
Photo sensitivity
S
l=660 nm
-
0.4
-
-
0.48
-
A/W
Dark current
I
D
-
0.01 *
1 *
-
-
0.3 *
nA
Cut-off frequency
fc
R
L
=50 W
l=780 nm, -3 dB
100 *
200
-
350 *
!
550 *
!
-
MHz
Terminal capacitance
Ct
f=1 MHz
-
3 *
5 *
-
3.5 *
!
7 *
!
pF
Half angle
-
-
25
-
-
20
-
degree
*1: V
R
=5 V
*2: V
R
=3 V
*3: V
R
=2 V
Si PIN photodiode
S8359, S8751
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KPIN1063E01
Aug. 2002 DN
2
I Dimensional outline (unit: mm)
I Spectral response
KPINB0266EA
KPINA0089EA
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
0
200
400
600
800
1000
1200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
(Typ. Ta=25 C)
QE=100 %
S8359
S8701
I Dark current vs. reverse voltage
KPINB0267EA
I Cut-off frequency vs. reverse voltage
KPINB0268EA
REVERSE VOLTAGE (V)
DARK CURRENT
100 fA
100 pA
10 pA
1 pA
1
0.1
0.01
10
100
S8359
S8701
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
CUT-OFF FREQUENCY (MHz)
10
1000
100
1
10
(Typ. Ta=25 C,
=780 nm, R
L
=50
)
S8701
S8359
I Terminal capacitance vs. reverse voltage
KPINB0269EA
I Directivity
KPINB0270EA
4.3 0.3
(INCLUDING BURR)
4.15
3.0
2.4
R 0.9
0.45
0.6
10
5
10
5
0.45
2.54 0.5
(SPECIFIED AT THE LEAD ROOT)
0.6 0.3
(0.8)
(1.2)
1.43
4.43
15 MIN.
1.4
Shaded area indicates burr.
Tolerance unless otherwise
noted: 0.2, 2
Values in parentheses indicate
reference value.
1.7
(INCLUDING BURR)
4.6
+0.6 -0
.
3
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 fF
100 pF
10 pF
1 pF
1
0.1
10
100
S8359
S8701
(Typ. Ta=25 C)
RELATIVE RADIANT OUTPUT (%)
(Typ. Ta=25 C)
80
%
40
%
60
%
20
%
20
10
0
10
20
90
80
50
40
30
70
60
90
80
50
40
30
70
60
100
%
S8701
S8359
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