S8844-0909
S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for
detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
low dark current when operated in MPP (Multi Pinned-Phase) mode. Spectral response characteristics are very stable making high-precision
photometry possible.
A one-stage thermoelectric cooler is built into the package along with the CCD chip. The CCD operating temperature can be maintained at -10 C
when used at room temperature (25 C). The CCD chip and thermoelectric cooler are hermetically sealed in the package to prevent
condensation, so no dry air is required during cooling, allowing easy handling. S8844-0909 is identical performance and pin compatible with
S7171-0909. S8844-0909 has wider FOV (Field of View) than S7171-0909 because of window structure.
Features
l Number of active pixels: 512 512
l Greater than 90 % quantum efficiency at peak sensitivity
wavelength
l Wide spectral response range
l Low noise
l Wide dynamic range
l MPP operation
l Built-in one-stage thermoelectric cooler
Applications
l Scientific measurement
l Semiconductor inspection
l UV imaging
l Bio-photon observation
l DNA sequencer
I M A G E S E N S O R
CCD area image sensor
512 512 pixels, Back-thinned FFT-CCD
PRELIMINARY DATA
Nov. 2002
1
I Specifications
Type No.
Cooling
Number of total pixels
Number of active
pixels
Active area
[mm (H) mm (V)]
S8844-0909
One-stage
TE-cooled
532 520
512 512
12.288 12.288
I General ratings
Parameter
Specifications
Pixel size
24 (H) 24 (V) m
Number of active pixels
512 (H) 512 (V)
Vertical clock phase
2 phase
Horizontal clock phase
2 phase
Output circuit
One-stage MOSFET source follower
Package
24 pin ceramic DIP (refer to dimensional outlines)
Built-in cooler
One-stage
Window
AR coated sapphire glass *
1
*1: Windowless type is available on custom order.
CCD area image sensor
S8844-0909
2
I Absolute maximum ratings (Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Operating temperature
Topr
-50
-
+30
C
Storage temperature
Tstg
-50
-
+70
C
OD voltage
V
OD
-0.5
-
+25
V
RD voltage
V
RD
-0.5
-
+18
V
ISV voltage
V
ISV
-0.5
-
+18
V
ISH voltage
V
ISH
-0.5
-
+18
V
IGV voltage
V
IG1V
, V
IG2V
-10
-
+15
V
IGH voltage
V
IG1H
, V
IG2H
-10
-
+15
V
SG voltage
V
SG
-10
-
+15
V
OG voltage
V
OG
-10
-
+15
V
RG voltage
V
RG
-10
-
+15
V
TG voltage
V
TG
-10
-
+15
V
Vertical clock voltage
V
P1V
, V
P2V
-10
-
+15
V
Horizontal clock voltage
V
P1H
, V
P2H
-10
-
+15
V
I Operating conditions (MPP mode, Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
V
OD
18
20
22
V
Reset drain voltage
V
RD
11.5
12
12.5
V
Output gate voltage
V
OG
1
3
5
V
Substrate voltage
V
SS
-
0
-
V
Test point (vertical input source)
V
ISV
-
V
RD
-
V
Test point (horizontal input source)
V
ISH
-
V
RD
-
V
Test point (vertical input gate)
V
IG1V
, V
IG2V
-8
0
-
V
Test point (horizontal input gate)
V
IG1H
, V
IG2H
-8
0
-
V
High
V
P1VH
, V
P2VH
4
6
8
Vertical shift register clock voltage
Low
V
P1VL
, V
P2VL
-9
-8
-7
V
High
V
P1HH
, V
P2HH
4
6
8
Horizontal shift register clock voltage
Low
V
P1HL
, V
P2HL
-9
-8
-7
V
High
V
SGH
4
6
8
Summing gate voltage
Low
V
SGL
-9
-8
-7
V
High
V
RGH
4
6
8
Reset gate voltage
Low
V
RGL
-9
-8
-7
V
High
V
TGH
4
6
8
Transfer gate voltage
Low
V
TGL
-9
-8
-7
V
I Electrical characteristics (Ta=25 C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Signal output frequency
fc
-
-
1
MHz
Vertical shift register capacitance
C
P1V
, C
P2V
-
6,400
-
pF
Horizontal shift register capacitance
C
P1H
, C
P2H
-
120
-
pF
Summing gate capacitance
C
SG
-
7
-
pF
Reset gate capacitance
C
RG
-
7
-
pF
Transfer gate capacitance
C
TG
-
150
-
pF
Charge transfer efficiency *
2
CTE
0.99995
0.99999
-
-
DC output level *
3
Vout
12
15
18
V
Output impedance *
3
Zo
-
3
-
kW
Power consumption *
3
*
4
P
-
15
-
mW
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: The values depend on the load resistance. (V
OD
=20 V, Load resistance=22 kW)
*4: Power consumption of the on-chip amplifier.
CCD area image sensor
S8844-0909
3
*9: Spectral response with sapphire window is decreased by
the transmittance
I Spectral response (without window)
*9
I Spectral transmittance characteristic of window material
KMPDB0058EA
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
(Typ. Ta=25 C)
0
200
400
600
800
1000
1200
10
20
30
40
50
60
70
80
90
100
FRONT-SIDED
FRONT-SIDED
(UV COAT)
BACK-THINNED
0
10
100 200
WAVELENGTH (nm)
TRANSMITTANCE (%)
300 400 500 600 700 800 900 1000 1100 1200
20
30
40
50
60
70
80
90
100
(Typ. Ta=25 C)
AR COATED SAPPHIRE
KMPDB0226EA
I Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
-
Fw Sv
-
V
Vertical
150,000
300,000
-
Full well capacity
Horizontal
Fw
300,000
600,000
-
e
-
CCD node sensitivity
Sv
1.8
2.2
-
V/e
-
25 C
-
4,000
12,000
Dark current *
5
(MPP mode)
0 C
DS
-
200
600
e
-
/pixel/s
Readout noise *
6
Nr
-
8
16
e
-
rms
Line binning
18,750
75,000
-
-
Dynamic range *
7
Area scanning
DR
9,375
37,500
-
-
Photo response non-uniformity *
8
PRNU
-
3
10
%
Spectral response range
l
-
200 to 1100
-
nm
*5: Dark current nearly doubles for every 5 to 7 C increase in temperature.
*6: Operating frequency is 150 kHz.
*7: Dynamic Range (DR) = Full well/Readout noise
*8: Measured at half of the full well capacity.
Photo Response Non-Uniformity (PRNU) [%] =
Signal
peak)
to
(peak
noise
pattern
Fixed
100
CCD area image sensor
S8844-0909
I Device structure
23
22
21
20
14
15
24
1
2
12
11
8
9
3
4
5
512 SIGNAL OUT
4 BLANK
4 BLANK
THINNING
THINNING
1 2 3 4
2
3
4
5
V
H
8 BEVEL
4 BEVEL
512 SIGNAL OUT
13
10
V=512
H=512
5
4 BEVEL
4 BEVEL
I Dark current vs. temperature
KMPDC0075EA
-50
-40
-30
-20
0
-10
10
20
30
TEMPERATURE (C)
0.1
1
10
100
1000
10000
DARK CURRENT (e
-
/pixel/s)
(Typ.)
KMPDB0037EB
4
CCD area image sensor
S8844-0909
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..519 520
512 + 8 (BEVEL)
Tpwv
Tovr
Tpwr
D1
D2
D3
D4
D18
D19
D20
D5..D12, S1..S512, D13..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
1
2
3
KMPDC0119EA
I Timing chart
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Pulse width
Tpwv
6
-
-
s
P1V, P2V, TG
Rise and fall time
Tprv, Tpfv
*
10
200
-
-
ns
Pulse width
Tpwh
500
-
-
ns
Rise and fall time
Tprh, pfh
10
-
-
ns
P1H, P2H
Duty ratio
-
*
10
-
50
-
%
Pulse width
Tpws
500
-
-
ns
Rise and fall time
Tprs, Tpfs
10
-
-
ns
SG
Duty ratio
-
-
-
50
-
%
Pulse width
Tpwr
100
-
-
ns
RG
Rise and fall time
Tprr, Tpfr
-
5
-
-
ns
TG P1H
Overlap time
Tovr
-
3
-
-
s
*10: Symmetrical clock pulses should be overlapped at 50 % of maximum amplitude.
5
Area scanning 1 (low dark current mode)
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