GENERAL
Parameter
Description/Value
Unit
Spectral Response (See Fig. 1)
Wavelength of Maximum Response
Photo-
cathode
Input Window Material
MCP
A
Output Window Material
A
Phosphor Screen Material
A
Case Material
Lead Wire Cover
Weight (Approx.)
NOTE:
A
Please refer to "SELECTION GUIDE BY SUFFIX NUMBER".
Variety of options are available for any applications.
NOTE:
B
The maximum and recommended supply voltage are noted on
the test data sheet when the product is delivered.
Please refer to the test data sheet for these values.
nm
nm
--
mm
--
--
--
--
--
--
g
360 to 720
530
GaAsP (Cs)
18
Borosilicate Glass
Single Stage
Fiber Optic Plate
P-43
Poly Oxy Methylene (POM)
Teflon
80
Material
Minimum Effective Diameter
GaAsP PHOTOCATHODE (18 mm DIA.)
PROXIMITY FOCUSED
IMAGE INTENSIFIER
V8070U-64-G130
MAXIMUM RATINGS (Absolute Maximum Values)
Superior Sensitivity Imaging Device for Visible Region
GaAsP(Cs) Photocathode(Typ.) : QE...50 % at 530 nm and Low Noise
Parameter
Maximum Value Unit
Supply
Voltage
Tempera-
ture
780 to 830
710 to 1010
5100 to 6100
-55 to +65
-20 to +40
Ratings
750 to 800
500 to 1000
5000 to 6000
--
--
V dc
V dc
V dc
C
C
Photocathode-MCPin
B
MCPin-MCPout
B
MCPout-Phosphor Screen
B
Storage
Operating
Figure 1: Typical Spectral Response
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2000 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
FEATURES
q
Superior Sensitivity in Visible Region
Quantum Efficiency(Typ.)............50 % at 530 nm
q
High Resolution(Typ.)....................45 Lp/mm
q
Gating Operation..................5 ns (Gate width)
q
Low Noise/ EBI(Typ.)......................2
10
-14
W/cm
2
APPLICATIONS
q
Bio-imaging for Fluorescence/Luminescence
q
Shutter Cameras
q
Time Resolved Low-light-level Imaging
(with image sensors such as CCD, etc.)
Microscopes, Low-light-level TV, etc.
TII F0029
TII B0094EB
SELECTION GUIDE BY SUFFIX NUMBER
V8070 U - 64 - A B C D
A: Gate Operating
B: Stage of MCP
C: Phosphor screen
D: Output Window
A
Suffix No.
Gate Type
N
G
Non-Gate
Gateable (5ns)
Suffix No. Phosphor Screen
0
1
3
4
6
7
P-20
P-11
P-43
P-24
P-46
P-47
Suffix No.
Output Window
0
1
2
Fiber Optic Plate
Fiber Optic Plate
W/NESA*
Borosilicate Glass
* With Transparent Conductive
Coating
Suffix No.
Stage of MCP
1
2
3
1
2
3
C
D
B
PRELIMINARY DATA
SEPT. 2000
300
10
-1
10
0
10
1
10
2
10
3
400
500
WAVELENGTH (nm)
CA
THODE RADIANT
SENSITIVITY
(mA/W)
QUANTUM EFFICIENCY
(%)
600
700
800
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
PROXIMITY FOCUSED IMAGE INTENSIFIER V8070U-64-G130
Figure 2: Radiant Emittance Gain vs. Wavelength
Figure 4: Dimensional Outline (Unit: mm)
TII 1046E03
SEPT. 2000 SI
Printed in Japan (500)
CHARACTERISTICS
Parameter
Min.
Unit
Photocathode
Light Gain
EBI
Limiting Resolution
Response Time (Gate Width)
Luminous Sensitivity
Radiant
(Quantum Efficiency)
Luminous Gain
Radiant Emittance Gain at 530 nm
Luminous
Radiant at 530 nm
at 400 nm
at 500 nm
at 530 nm
at 600 nm
at 650 nm
400
--
--
--
--
--
1
10
4
--
--
--
40
5
700
80 (25)
202 (50)
214 (50)
210 (43)
160 (30)
2.2
10
4
1.4
10
4
8
10
-12
2
10
-14
45
--
A/lm
mA/W
(%)
(lm/m
2
)/ lx
(W/m
2
)/(W/m
2
)
lm/cm
2
W/cm
2
Lp/mm
ns
--
--
--
--
--
--
--
--
3
10
-11
--
--
--
Typ.
Max.
TII B0095EC
Figure 3: Typical Luminous Gain and EBI vs. MCP Voltage
TII B0096EC
EFFECTIVE
PHOTOCATHODE
DIAMETER
+0
0.3
BLACK
VIOLET
GREEN
RED
2.0 0.6
5.5 0.1
0.5 0.2
23.0 0.3
INPUT
WINDOW
PHOTOCATHODE
OUTPUT
WINDOW
LEAD
LENGTH
200 MIN.
LEAD (TEFLON COVER)
GREEN
VIOLET
BLACK
RED
--PHOTOCATHODE
--MCP-INPUT
--MCP-OUTPUT
--PHOSPHOR SCREEN
EFFECTIVE
PHOSPHOR SCREEN
DIAMETER
INPUT SIDE VIEW
OUTPUT SIDE VIEW
18 MIN.
45.0
19
21.8
18 MIN.
7
7
TII A0043EA
300
10
1
10
2
10
3
10
4
10
5
400
500
WAVELENGTH (nm)
RADIANT
EMITT
ANCE GAIN [(W/m
2
)/(W/m
2
)]
600
700
800
Photocathode and MCPin = 800 V dc
MCPin and MCPout = 900 V dc
MCPout and Phosphor Screen = 6000 V dc
10
1
500
600
700
800
900
MCP VOLTAGE (V)
LUMINOUS GAIN [(lm/m
2)
/lx]
10
-12
EBI (lm/cm
2
)
10
-11
10
-10
10
-9
10
-8
10
2
10
3
10
4
10
5
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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