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Электронный компонент: HF08-CS2501

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HANBit
HF08-CS2501
URL :
www.hbe.co.kr
1
HANBit Electronics Co. Ltd
REV_02(August,2002)
PIN ASSIGNMENT


GENERAL DESCRIPTION
The HF08-CS2501 is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 80-pin, single-sided, FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Output enable (/OE) and
write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL -
compatible.
FEATURES
w
Access time : 75, 90 and 120ns
w
High-density 8MByte design
w
High-reliability, low-power design
w
Single + 5V
0.5V power supply
w
Easy memory expansion
w
All inputs and outputs are TTL-compatible
w
FR4-PCB design
w
Low profile 72-pin SIMM
w
Minimum 1,000,000 write/erase cycle
w
Sectors erase architecture
w
Sector group protection
w
Temporary sector group unprotection
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The used device is Am29F016B

OPTIONS MARKING
w
Timing
90ns access -90
w
Packages
80-pin SIMM M




PIN SYMBOL PIN
SYMBOL
PIN
SYMBOL
1
VSS
28
DQ14
55
A17
2
VCC
29
DQ13
56
A18
3
NC
30
DQ12
57
A19
4
A3
31
DQ11
58
A20
5
A2
32
DQ10
59
/CE1
6
A1
33
DQ9
60
/WE1
7
A0
34
DQ8
61
/OE1
8
DQ0
35
/CE0
62
VSS
9
DQ1
36
VCC
63
DQ24
10
DQ2
37
PD5
64
DQ25
11
DQ3
38
A11
65
DQ26
12
VSS
39
A12
66
DQ27
13
DQ4
40
A13
67
DQ28
14
DQ5
41
A14
68
DQ29
15
DQ6
42
A15
69
DQ30
16
DQ7
43
VSS
70
DQ31
17
/OE0
44
DQ16
71
NC
18
/WE0
45
DQ17
72
VCC
19
A4
46
DQ18
73
NC
20
A5
47
DQ19
74
NC
21
A6
48
DQ20
75
PD1
22
A7
49
DQ21
76
PD2
23
A8
50
DQ22
77
PD3
24
A9
51
DQ23
78
VSS
25
VSS
52
NC
79
PD4
26
A10
53
A16
80
VSS
27
DQ15
54
VSS
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 80pin-SIMM, 5V
Part No. HF08-CS2501
80-PIN SIMM
TOP VIEW
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
2
HANBit Electronics Co. Ltd
REV_02(August,2002)
DQ0 - DQ31
A0
A20
32
A0-20
/WE
/OE
DQ 0-7
/CE
U1
RY-BY
/Reset
A0-20
/WE
/OE
DQ 8-15
/CE
U2
RY-BY
/Reset
A0-20
/WE
/OE
DQ16-23
/CE
U3
RY-BY
/Reset
A0-20
/WE
/OE
DQ24-31
/CE
U4
RY-BY
/Reset
/WE0
/
WE0
/WE1
/WE1
/OE1
/CE0
RY-/BY1
/Reset
21
/OE0
/RY-BY0
FUNCTIONAL BLOCK DIAGRAM




































HANBit
HF08-CS2501
URL :
www.hbe.co.kr
3
HANBit Electronics Co. Ltd
REV_02(August,2002)
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Q
ACTIVE
WRITE or ERASE
X
L
L
D
ACTIVE
NOTE: X means don
'
t care

ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage with respect to ground all other pins
V
IN,OUT
-2.0V to +7.0V
Voltage with respect to ground Vcc
V
CC
-2.0V to +7.0V
Storage Temperature
T
STG
-65oC to +125oC
Operating Temperature
T
A
-55oC to +125oC
Power Dissipation
P
D
4W
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Vcc for
10% device Supply Voltages
Vcc
4.5V
5.5V
Ground
V
SS
0
0
0
DC AND OPERATING CHARACTERISTICS (0oC
TA
70 oC ; Vcc = 5V
0.5V )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, V
IN
= GND to Vcc
I
L1
1.0
A
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
I
L0
1.0
A
Output High Voltage
I
OH
= -2.5mA, Vcc = Vcc min
V
OH
2.4
V
Output Low Voltage
I
OL
= 12mA, Vcc =Vcc min
V
OL
0.45
V
Vcc Active Current for Read(1)
/CE
= V
IL
, /OE=V
IH
,
I
CC1
40
mA
Vcc Active Current for Program
or Erase(2)
/CE = V
IL
, /OE=V
IH
I
CC2
60
mA
Vcc Standby Current
/CE= V
IH
I
CC3
1.0
mA
Low Vcc Lock-Out Voltage
V
LKO
3.2
4.2
V
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
4
HANBit Electronics Co. Ltd
REV_02(August,2002)
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
TYP.
MAX.
UNIT
COMMENTS
Sector Erase Time
-
1
8
sec
Excludes 00H programming
prior to erasure
Byte Programming Time
-
7
300
s
Excludes system-level
overhead
Chip Programming Time
-
14.4
43.2
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
TEST SETUP
MIN
MAX
UNIT
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Notes : Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC STANDARD
DESCRIPTION
TEST SETUP
-75
-90
UNIT
t
AVAV
t
RC
Read Cycle Time
Min
70
90
ns
t
AVQV
t
ACC
Address to Output Delay
/CE = V
IL
/OE = V
IL
Max
70
90
ns
t
ELQV
t
CE
Chip Enable to Output Delay
/OE = V
IL
Max
70
90
ns
t
GLQV
t
OE
Chip Enable to Output Delay
Max
40
40
ns
t
EHQZ
t
DF
Chip Enable to Output High-Z
Max
20
20
ns
t
GHQZ
t
DF
Output Enable to Output High-Z
Max
20
20
ns
t
AXQX
t
QH
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
0
0
ns





HANBit
HF08-CS2501
URL :
www.hbe.co.kr
5
HANBit Electronics Co. Ltd
REV_02(August,2002)
TEST SPECIFICATIONS
TEST CONDITION
ALL SPEED OPTIONS
UNIT
Output load
1TTL gate
Output load capacitance,
C
L
(Including jig capacitance)
100
pF
Input rise and full times
20
ns
Input pulse levels
0.45-2.4
V
Input timing measurement reference levels
0.8
V
Output timing measurement reference levels
2.0
V













Erase/Program Operations
PARAMETER
SYMBOLS
JEDEC
STANDARD
DESCRIPTION
-75
-90
UNIT
t
AVAV
t
WC
Write Cycle Time
Min
70
90
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
0
ns
t
OES
Output Enable Setup Time
Min
0
0
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
Min
0
0
ns
t
ELWL
t
CS
/CE Setup Time
Min
0
0
ns
t
WHEH
t
CH
/CE Hold Time
Min
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
40
45
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ
7
7
s
5.0V
Device
Under
Test
2.7k
Diodes = IN3064
or Equivalent
6.2k
IN3064
or Equivalent
C
L
Note : C
L
= 100pF including jig capacitance
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
6
HANBit Electronics Co. Ltd
REV_02(August,2002)
t
WHWH2
t
WHWH2
Sector Erase Operation (Note1)
Typ
1
1
sec
t
VCS
Vcc set up time
Min
50
50
s
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
u
Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
JEDEC
STANDARD
DESCRIPTION
-75
-90
UNIT
t
AVAV
t
WC
Write Cycle Time
Min
70
90
ns
t
AVWL
t
AS
Address Setup Time
Min
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
0
ns
t
OES
Output Enable Setup Time
Min
0
0
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
Min
0
0
ns
t
ELWL
t
CS
/CE Setup Time
Min
0
0
ns
t
WHEH
t
CH
/CE Hold Time
Min
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
40
45
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
20
20
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ
7
7
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note1)
Typ
1
1
sec
Notes :
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
7
HANBit Electronics Co. Ltd
REV_02(August,2002)
u
READ OPERATIONS TIMING
u
RESET TIMING

HANBit
HF08-CS2501
URL :
www.hbe.co.kr
8
HANBit Electronics Co. Ltd
REV_02(August,2002)
u
PROGRAM OPERATIONS TIMING
u
CHIP/SECTOR ERASE OPERATION TIMINGS


HANBit
HF08-CS2501
URL :
www.hbe.co.kr
9
HANBit Electronics Co. Ltd
REV_02(August,2002)
u
DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)

u
TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)









HANBit
HF08-CS2501
URL :
www.hbe.co.kr
10
HANBit Electronics Co. Ltd
REV_02(August,2002)
u
SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u
ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
11
HANBit Electronics Co. Ltd
REV_02(August,2002)
PACKAGE DIMENSIONS

<FRONT SIDE>
<REAR SIDE>


0.25 mm MAX
MIN
2.54 mm
1.27
(Solder & Gold Plating)
Gold: 1.04
0.10 mm
Solder: 0.914
0.10 mm
1.27(
0.08)
HANBit
HF08-CS2501
URL :
www.hbe.co.kr
12
HANBit Electronics Co. Ltd
REV_02(August,2002)
ORDERING INFORMATION








Part Number
Density
Org.
Package
Component
Number
Vcc
SPEED
HF08-CS2501
8MByte
2M
32bit
80Pin-SIMM
4EA
5.0V
90ns