HANBiT HMD4M64D16E
URL:www.hbe.co.kr
- 1 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
GENERAL DESCRIPTION
The HMD4M64D16E is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16E consists of
sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOP
400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The HMD4M64D16E is a Dual In-line
Memory Module and is intended for mounting into 168 pin edge connector sockets
FEATURES PERFORMANCE RANGE
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Part Identification
HMD4M64D16E --- 4KCycles/64ms Ref, Gold Plate Lead
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High-density 32MByte design
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New JEDEC standard proposal without buffer
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CAS-before-RAS Refresh capability
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RAS-only and Hidden refresh capability
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Single +5
0.5V power supply
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Timing
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EDO mode operation. 50ns access -5
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LVTTL compatible inputs and outputs 60ns access -6
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FR4-PCB design
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Packages
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Access times : 50, 60ns 168-pin DIMM D
PIN NAMES
Pin Name
Function
Pin Name
Function
Pin Name
Function
A0-A11
Address Input (4k
ref)
/RAS0, /RAS2 Row Address Strobe
Vss
Ground
A0-A12
Address Input (8k
ref)
/CAS0 - /CAS7 Column
Address
Strobe
NC
No Connection
/WE0,/WE2
Read/Write Enable
SCL
Serial Clock
Vcc
Power (+5V)
/OE0,/OE2
Output Enable
DU
Don't use
SDA
Serial Address /Data
I/O
SA0
SA2
Address in EEPROM
CB0 - CB7
Check Bit
DQ0-DQ63
Data In/Out
SPEED
t
RAC
t
CAC
t
RC
t
HPC
-5
50ns
15ns
84ns
20ns
-6
60ns
17ns
104ns
25ns
32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin
Part No. HMD4M64D16E
HANBiT HMD4M64D16E
URL:www.hbe.co.kr
- 2 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
PIN
Symbol
PIN Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
Vss
29
/CAS1
57
DQ18
85
Vss
113
/CAS5
141
DQ50
2
DQ0
30
/RAS0
58
DQ19
86
DQ32
114
/RAS1
142
DQ51
3
DQ1
31
/OE0
59
Vcc
87
DQ33
115
NC
143
Vcc
4
DQ2
32
Vss
60
DQ20
88
DQ34
116
Vss
144
DQ52
5
DQ3
33
A0
61
NC
89
DQ35
117
A1
145
NC
6
Vcc
34
A2
62
NC
90
Vcc
118
A3
146
NC
7
DQ4
35
A4
63
NC
91
DQ36
119
A5
147
NC
8
DQ5
36
A6
64
Vss
92
DQ37
120
A7
148
Vss
9
DQ6
37
A8
65
DQ21
93
DQ38
121
A9
149
DQ53
10
DQ7
38
A10
66
DQ22
94
DQ39
122
A11
150
DQ54
11
DQ8
39
NC
67
DQ23
95
DQ40
123
NC
151
DQ55
12
Vss
40
Vcc
68
Vss
96
Vss
124
Vcc
152
Vss
13
DQ9
41
Vcc
69
DQ24
97
DQ41
125
NC
153
DQ56
14
DQ10
42
NC
70
DQ25
98
DQ42
126
NC
154
DQ57
15
DQ11
43
Vss
71
DQ26
99
DQ43
127
Vss
155
DQ58
16
DQ12
44
/OE2
72
DQ27
100
DQ44
128
NC
156
DQ59
17
DQ13
45
/RAS2
73
Vcc
101
DQ45
129
/RAS3
157
Vcc
18
Vcc
46
/CAS2
74
DQ28
102
Vcc
130
/CAS6
158
DQ60
19
DQ14
47
/CAS3
75
DQ29
103
DQ46
131
/CAS7
159
DQ61
20
DQ15
48
/WE2
76
DQ30
104
DQ47
132
NC
160
DQ62
21
NC
49
Vcc
77
DQ31
105
NC
133
Vcc
161
DQ63
22
NC
50
NC
78
Vss
106
NC
134
NC
162
Vss
23
Vss
51
NC
79
NC
107
Vss
135
NC
163
NC
24
NC
52
NC
80
NC
108
NC
136
NC
164
NC
25
NC
53
NC
81
NC
109
NC
137
NC
165
SA0
26
Vcc
54
Vss
82
SDA
110
Vcc
138
Vss
166
SA1
27
/WE0
55
DQ16
83
SCL
111
NC
139
DQ48
167
SA2
28
/CAS0
56
DQ17
84
Vcc
112
/CAS4
140
DQ49
168
Vcc
PIN ASSIGNMENT
HANBiT HMD4M64D16E
URL:www.hbe.co.kr
- 3 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
FUNCTIONAL BLOCK DIAGRAM
/CAS0
/RAS0
/OE0
/CAS1
/CAS2
/CAS3
/WE0
A0-A11
/CAS DQ0-3
/RAS
/OE
/W A0 -A11
U1
/CAS DQ4-7
/RAS
/OE
/W A0 -A11
U2
/CAS DQ8-11
/RAS
/OE
/W A0 -A11
U3
/CAS DQ12-15
/RAS
/OE
/W A0 -A11
U4
/CAS DQ16-19
/RAS
/OE
/W A0 -A11
U6
/CAS DQ20-23
/RAS
/OE
/W A0 -A11
U7
/CAS DQ24-27
/RAS
/OE
/W A0 -A11
U8
/CAS DQ28-31
/RAS
/OE
/W A0 -A11
U9
/CAS DQ32-35
/RAS
/OE
/W A0 -A11
U11
/CAS DQ36-39
/RAS
/OE
/W A0 -A11
U12
/CAS DQ40-43
/RAS
/OE
/W A0 -A11
U13
/CAS DQ44-47
/RAS
/OE
/W A0 -A11
U14
/CAS DQ48-51
/RAS
/OE
/W A0 -A11
U16
/CAS DQ52-55
/RAS
/OE
/W A0 -A11
U17
/CAS DQ56-59
/RAS
/OE
/W A0 -A11
U18
/CAS DQ60-63
/RAS
/OE
/W A0 -A11
U19
/CAS4
/RAS2
/OE2
/CAS5
/CAS6
/CAS7
/WE
Vcc
Vss
0.1uF or 0.22uF
Capacitor
To all DRAMs
DQ 0-63
HANBiT HMD4M64D16E
URL:www.hbe.co.kr
- 4 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
V
IN ,OUT
-0.5V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-0.5V to 4.6V
Power Dissipation
P
D
18W
Storage Temperature
T
STG
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
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Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to V
SS
, TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
Supply Voltage
Vcc
4.5
5..
5.5
V
Ground
Vss
0
0
0
V
Input High Voltage
V
IH
2.4
-
Vcc+1
V
Input Low Voltage
V
IL
-1.0
-
0.8
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
HMD4M72D18EG
(4K REF)
SYMBOL
SPEED
MIN
MAX
UNITS
-5
-
1980
mA
I
CC1
-6
1800
mA
I
CC2
Don't care
-
18
MA
-5
-
1980
mA
I
CC3
-6
1800
mA
-5
-
1620
mA
I
CC4
-6
1440
mA
I
CC5
Don't care
-
9
MA
-5
-
1980
mA
I
CC6
-6
1800
mA
Icc7
L
4500
A
Iccs
L
3600
A
I
CC1
: Operating Current * (/RAS , /CAS , Address cycling @t
RC
=min.)
I
CC2
: Standby Current ( /RAS=/CAS=V
IH
)
I
CC3
: /RAS Only Refresh Current * ( /CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
HANBiT HMD4M64D16E
URL:www.hbe.co.kr
- 5 -
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
I
CC4
: Fast Page Mode Current * (/RAS=V
IL
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
V
IN
4.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
V
OUT
3.3V
V
OH
: Output High Voltage Level (I
OH
= -2mA )
V
OL
: Output Low Voltage Level (I
OL
= 2mA )
* NOTE: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( T
A
=25
o
C, Vcc = 5V, f = 1Mz )
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input Capacitance (A0-A11)
C
IN1
-
20
pF
Input Capacitance (/W0,/W1,/OE0,/OE2)
C
IN2
-
20
pF
Input Capacitance (/RAS0,/RAS2)
C
IN3
-
73
pF
Input Capacitance (/CAS0-/CAS7)
C
IN4
-
20
pF
Input/Output Capacitance (DQ0-63)
C
DQ1
-
17
pF
AC CHARACTERISTICS
( 0
o
C
T
A
70oC , Vcc = 5V
10%, See notes 1,2.)
-5
-6
STANDARD OPERATION
SYMBOL
MIN
MAX
MIN
MAX
UNIT
Random read or write cycle time
t
RC
84
104
ns
Read-modify-write cycle time
t
RWC
116
140
ns
Access time from /RAS
t
RAC
50
60
ns
Access time from /CAS
t
CAC
13
15
ns
Access time from column address
t
AA
25
30
ns
/CAS to output in Low-Z
t
CLZ
3
3
ns
/OE to output in Low-Z
t
OLZ
3
3
ns
Output buffer turn-off delay from /CAS
t
OFF
3
13
3
13
ns
Transition time (rise and fall)
t
T
2
50
2
50
ns
/RAS precharge time
t
RP
30
40
ns
/RAS pulse width
t
RAS
50
10K
60
10K
ns
/RAS hold time
t
RSH
13
15
ns
/CAS hold time
t
CSH
38
45
ns
/CAS pulse width
t
CAS
8
10K
10
10K
ns
/RAS to /CAS delay time
t
RCD
20
37
20
45
ns
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