2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
High breakdown voltage
V
CEO
= 300 V
Small Cob
Cob = 1.5 pF Typ.
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
2SC4702
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.1
A
V
CB
= 250 V, I
E
= 0
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.5
V
I
C
= 30 mA, I
B
= 3 mA
DC current transfer ratio
h
FE
60
--
150
V
CE
= 6 V, I
C
= 2 mA
Gain bandwidth product
f
T
--
80
--
MHz
V
CE
= 6 V, I
C
= 5 mA
Collector output capacitance
Cob
--
1.5
--
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Note:
Marking is "XV".
2SC4702
3
150
100
50
Ambient Temperature Ta (
C)
0
150
50
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
Typical Output Characteristics
Collector Current I
C
(mA)
0
20
40
60
80
100
Collector to Emitter Voltage V
CE
(V)
10
8
6
4
2
Pulse Test
I
B
= 10
A
20
30
40
50
80
100
60
Typical Transfer Characteristics
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
100
10
1.0
0.1
0.01
V
CE
= 6 V
Pulse Test
25
25
Ta = 75
C
1.0
0.8
0.6
0.4
0.2
0
DC Current Transfer Ratio vs.
Collector Current
Collector Current I
C
(mA)
0.1
1.0
10
100
1
10
100
1,000
DC Current Transfer Ratio h
FE
V
CE
= 6 V
Pulse Test
25
25
Ta = 75
C
2SC4702
4
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage
V
CE
(sat)
(V)
0.1
1.0
10
100
0.01
0.1
1.0
10
I
C
/I
B
= 10
Pulse Test
25
25
Ta = 75
C
Gain Bandwidth Product vs.
Collector Current
Collector Current I
C
(mA)
0.1
1.0
10
100
1
10
100
1,000
Gain Bandwidth Product f
T
(MHz)
V
CE
= 6 V
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
0.1
1.0
10
100
0.1
1.0
10
100
f = 1 MHz
I
E
= 0
0.16
0 0.1
+ 0.10
0.06
3 0.4
+ 0.10
0.05
0.95
0.95
1.9
0.2
2.95
0.2
2.8
+ 0.2 0.6
0.65
1.5
0.15
0.65
1.1
+ 0.2 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
--
Conforms
0.011 g
Unit: mm
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