2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
2SA1083, 2SA1084, 2SA1085
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SA1083
2SA1084
2SA1085
Unit
Collector to base voltage
V
CBO
60
90
120
V
Collector to emitter voltage
V
CEO
60
90
120
V
Emitter to base voltage
V
EBO
5
5
5
V
Collector current
I
C
100
100
100
mA
Emitter current
I
E
100
100
100
mA
Collector power dissipation
P
C
400
400
400
mW
Junction temperature
Tj
150
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
55 to +150
C
2SA1083, 2SA1084, 2SA1085
3
Electrical Characteristics (Ta = 25C)
2SA1083
2SA1084
2SA1085
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
60
--
--
90
--
--
120 --
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
60
--
--
90
--
--
120 --
--
V
I
C
= 1 mA,
R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.1
--
--
0.1
--
--
0.1
A
V
CB
= 50 V, I
E
= 0
Emitter cutoff current
I
EBO
--
--
0.1
--
--
0.1
--
--
0.1
A
V
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250
--
800
250
--
800
250
--
800
V
CE
= 12 V,
I
C
= 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
--
--
0.2
--
--
0.2
--
--
0.2
V
I
C
= 10 mA,
I
B
= 1 mA
Base to emitter voltage
V
BE
--
0.6
--
--
0.6 --
--
0.6 --
V
V
CE
= 12 V,
I
C
= 2 mA
Gain bandwidth product f
T
--
90
--
--
90
--
--
90
--
MHz V
CE
= 12 V,
I
C
= 2 mA
Collector output
capacitance
Cob
--
3.5
--
--
3.5
--
--
3.5
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Noise voltage reffered
to input
e
n
--
0.5
--
--
0.5
--
--
0.5
--
nV/
Hz
V
CE
= 6V,
I
C
= 10 mA,
f = 1 kHz,
R
g
= 0,
f = 1Hz
Note:
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h
FE
as follows.
D
E
250 to 500
400 to 800
2SA1083, 2SA1084, 2SA1085
4
Maximum Collector Dissipation Curve
600
400
200
0
50
100
Ambient Temperature Ta (
C)
Collector power dissipation P
C
(mW)
150
Typical Output Characteristics (1)
50
140
120
100
80
60
40
20
A
40
30
20
10
0
4
12
20
8
16
Collector to Emitter Voltage V
CE
(V)
Collector current I
C
(mA)
P
C
= 0.4 W
I
B
= 0
Typical Output Characteristics (2)
20
16
12
8
4
0
4
8
Collector to Emitter Voltage V
CE
(V)
I
B
= 0
5
A
10
15
20
25
30
35
40
12
16
20
Collector current I
C
(mA)
Typicaol Transfer Characteristics
10
5
2
1.0
0.5
0.2
0.1
0
0.4
0.8
0.2
0.6
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
V
CE
= 12 V
2SA1083, 2SA1084, 2SA1085
5
DC Current Transfer Ratio vs.
Collector Current
5,000
2,000
1,000
500
200
100
50
0.1
1.0
10
100
3
30
0.3
Collector Current I
C
(mA)
DC current teransfer ratio h
FE
V
CE
= 12 V
Pulse
Collector to Emitter Saturation
Voltage vs. Collector Current
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1
5
2
20
100
10
50
Collector Current I
C
(mA)
Collector to emitter saturation voltage
V
CE(sat)
(V)
I
C
= 10 I
B
Base to Emitter Saturation Voltage
vs. Collector Current
10
5
2
1.0
0.5
0.2
0.1
1
5
2
20
100
10
50
Collector Current I
C
(mA)
Base to emitter saturation voltage
V
BE(sat)
(V)
I
C
= 10 I
B
Gain Bandwidth Product vs.
Collector Current
2,000
1,000
500
200
100
50
20
1
5
20
100
2
10
50
Collector Current I
C
(mA)
Gain bandwidth product f
T
(MHz)
V
CE
= 12 V
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