2SB562
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD468
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
2SB562
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
1.0
A
Collector peak current
i
C(peak)
1.5
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1.0
A
V
CB
= 20 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
85
--
240
V
CE
= 2 V,
I
C
= 0.5 A (Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
--
0.2
0.5
V
I
C
= 0.8 A,
I
B
= 0.08 A (Pulse test)
Base to emitter voltage
V
BE
--
0.8
1.0
V
V
CE
= 2 V,
I
C
= 0.5 A (Pulse test)
Gain bandwidth product
f
T
--
350
--
MHz
V
CE
= 2 V,
I
C
= 0.5 A (Pulse test)
Collector output capacitance
Cob
--
38
--
pF
V
CB
= 10 V, I
E
= 0
f = 1 MHz
Note:
1. The 2SB562 is grouped by h
FE
as follows.
B
C
85 to 170
120 to 240
2SB562
3
0
0.4
0.8
1.2
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(W)
Maximum Collector Dissipation Curve
100
150
0
800
600
400
200
1,000
0.4
0.8
1.2
1.6
2.0
Collector Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
1 mA
P
C
= 0.9 W
2
3
4
5
6
7
8
I
B
= 0
0
300
100
10
30
3
1
1,000
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
Ta = 75
C
V
CE
= 2 V
25
C
1
1,000
300
100
30
10
3,000
3
10
30
100
300
1,000
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.Collector Current
Ta = 75
C
V
CE
= 2 V
Pulse
25
C
2SB562
4
0
0.20
0.15
0.10
0.05
0.25
3
1
10
30
100 300 1,000
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
Pulse test
Ta = 75
C
25
C
0
0.8
0.6
0.4
0.2
1.0
3
1
10
30
100
Base Current I
B
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
vs. Base Current
I
C
= 500 mA
800 mA
Pulse test
100
50
30
10
300
1
3
10
30
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
0.60 Max
0.5
0.1
4.8
0.3
3.8
0.3
8.0
0.5
0.7
2.3 Max
10.1 Min
0.5
1.27
2.54
0.65
0.1
0.75 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
--
Conforms
0.35 g
Unit: mm
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