2SC1342
Silicon NPN Epitaxial Planar
Application
VHF amplifier, mixer
Local oscollator
Outline
1. Emitter
2. Collector
3. Base
TO-92 (2)
3
2
1
2SC1342
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
4
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.5
A
V
CB
= 10 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
35
--
200
V
CE
= 6 V, I
C
= 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
0.8
1.2
V
I
C
= 10 mA, I
B
= 1 mA
Collector output capacitance
Cob
--
1.1
1.5
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Base time constant
r
bb'
C
C
--
20
35
ps
V
CB
= 6 V, I
C
= 1 mA,
f = 31.8 MHz
Gain bandwidth product
f
T
150
320
--
MHz
V
CE
= 6 V, I
C
= 1 mA
Noise figure
NF
--
5.5
8.5
dB
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz, R
g
= 50
Reverse transfer capacitance
Cre
--
0.9
1.2
pF
V
CE
= 10 V, I
E
= 1 mA,
f = 1 MHz
Power gain
PG
13
17
--
dB
V
CE
= 6 V, I
C
= 1 mA,
f = 100 MHz, R
g
=
100
,
R
L
= 550
, Unneutralized
Note:
1. The 2SC1342 is grouped by h
FE
as follows.
A
B
C
35 to 70
60 to 120
100 to 200
2SC1342
3
150
100
50
Ambient Temperature Ta (
C)
0
150
100
50
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
4
12
20
8
16
Collector to Emitter Voltage V
CE
(V)
20
16
12
8
4
0
Typical Output Characteristics (1)
Collector Current I
C
(mA)
240
200
160
180
140
120
100
80
60
40
20
A
IB = 0
P
C
= 100 mW
4
12
20
8
16
Collector to Emitter Voltage V
CE
(V)
5
4
3
2
1
0
Typical Output Characteristics (2)
Collector Current I
C
(mA)
I
B
= 0
10
A
20
30
40
50
0.60
0.64
0.68
0.72
0.76
0.80
Base to Emitter Voltage V
BE
(V)
0
4
8
12
16
20
Typical Transfer Characteristics (1)
Collector Current I
C
(mA)
V
CE
= 6 V
2SC1342
4
0.60
0.64
0.68
0.72
0.76
0.80
Base to Emitter Voltage V
BE
(V)
0
1
2
3
4
5
Typical Transfer Characteristics (2)
Collector Current I
C
(mA)
V
CE
= 6 V
0.1
0.2
0.5
1.0
2
5
10
20
Collector Current I
C
(mA)
20
0
60
40
80
100
120
140
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
V
CE
= 6 V
0.1
0.2
0.5
1.0
2
5
10
20
Collector to Base Voltage V
CB
(V)
0.8
0.6
1.2
1.0
1.4
1.6
1.8
2.0
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
f = 1 MHz
I
E
= 0
0.1
0.2
0.5
1.0
2
5
10
20
Collector to Emitter Voltage V
CE
(V)
0.4
0
1.2
0.8
1.6
2.0
2.4
2.8
Reverse Transfer Capacitance vs.
Collector to Emitter Voltage
Reverse Transfer Capacitance C
re
(pF)
f = 1 MHz
I
E
= 1 mA
2SC1342
5
0.1
2
0.5
0.2
1.0
5
Emitter Current I
E
(mA)
0.2
0
0.4
0.6
0.8
1.0
Reverse Transfer Capacitance
vs. Emitter Current
Reverse Transfer Capacitance C
re
(pF)
V
CE
= 10 V
f = 1 MHz
0.1
0.5
0.2
1.0
20
10
5
2
Collector Current I
C
(mA)
0
50
100
150
200
250
300
350
400
450
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
V
CE
= 6 V
0.1
2
0.5
0.2
1.0
20
5
10
Collector to Emitter Voltage V
CE
(V)
6
0
4
2
8
10
12
14
Noise Figure vs. Collector to
Emitter Voltage
Noise Figure NF (dB)
I
C
= 1 mA
f = 100 MHz
R
g
= 50
0.1
2
0.5
0.2
1.0
5
10
Collector Current I
C
(mA)
6
0
4
2
8
10
12
Noise Figure vs. Collector Current
Noise Figure NF (dB)
V
CE
= 6 V
f = 100 MHz
R
g
= 50
Power Gain Test Circuit
IN
OUT
D.U.T.
R
L
= 550
Unit R :
C : F
300 p
f = 100 MHz
R
g
= 100
3 k
500
0.01
0.1
0.01
V
EE
V
CC
0.01
10 p
max
2SC1342
6
Small Signal y Parameters (V
CE
= 6V, I
C
= 1 mA, Emitter Common Ta = 25C)
Item
Symbol
f = 50 MHz
f = 100 MHz
f = 200 MHz
Unit
Input admittance
yie
1.8 + j5.5
4.3 + j9.9
11.5 + j15.25
mS
Reverse transfer admittance
yre
0.022 j0.26
0.04 j0.52
0.105 j0.96
Forward transfer admittance
yfe
34 j12
28 j19
15.5 j25
Output admittance
yoe
0.1 + j0.5
0.15 + j0.9
0.21 + j1.45
6
42
12
36
24
18
30
Input Conductance g
ie
(mS)
16
12
0
8
4
20
24
28
Input Admittance vs. Frequency
Input Suceptance b
ie
(mS)
y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
300
200
5 mA
3 mA
2 mA
70
100
f = 50 MHz
I
C
= 1 mA
0.4
0.8
1.2
1.6
2.0
0.3
0.25
0.2
0.15
0.1
0.05
0
Reverse Transfer Admittance vs. Frequency
Reverse Transfer Conductance g
re
(mS)
Reverse Transfer Suceptance b
re
(mS)
y
re
= g
re
+ jb
re
V
CE
= 6 V
70
100
200
3 2 1
300
I
C
= 5 mA
f = 50 MHz
20
0
20
40
60
80
100
Forward Transfer Admittance vs. Frequency
Forward Transfer Conductance g
fe
(mS)
y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
2
3
5
70
100
200
300
f = 50 MHz
I
C
= 1 mA
20
40
60
80
100
0
Forward Transfer Suceptance b
fe
(mS)
0.4
0.2
0.1
0.3
0.5
0.6
Output Conductance g
oe
(mS)
1.5
0
1.0
0.5
2.0
2.5
3.0
Output Admittance vs. Frequency
Output Suceptance b
oe
(mS)
y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
70
5
3
2
100
200
300
f = 50 MHz
I
C
= 1 mA
2SC1342
7
10
20
5
1
2
Collector to Emitter Voltage V
CE
(V)
1
20
10
5
2
Input Admittance vs. Collector
to Emitter Voltage
Input Admittance y
ie
(mS)
b
ie
g
ie
Y
ie
= g
ie
+ jb
ie
I
C
= 1 mA
f = 100 MHz
10
20
5
1
2
Collector to Emitter Voltage V
CE
(V)
0.01
0.05
0.1
0.2
0.5
1.0
0.02
Reverse Transfer Admittance vs.
Collector to Emitter Voltage
Reverse Transfer Admittance y
re
(mS)
b
re
g
re
Y
re
= g
re
+ jb
re
I
C
= 1 mA
f = 100 MHz
10
20
5
1
2
Collector to Emitter Voltage V
CE
(V)
5
100
50
20
10
Forward Transfer Admittance vs.
Collector to Emitter Voltage
Forward Transfer y
fe
(mS)
Y
fe
= g
fe
+ jb
fe
I
C
= 1 mA
f = 100 MHz
g
fe
b
fe
10
20
5
1
2
Collector to Emitter Voltage V
CE
(V)
0.1
2.0
1.0
0.5
0.2
Output Admittance vs. Collector to
Emitter Voltage
Output Admittance y
oe
(mS)
Y
oe
= g
oe
+ jb
oe
I
C
= 1 mA
f = 100 MHz
g
oe
b
oe
2SC1342
8
0.5
5
2
10
1.0
0.1
0.2
Collector Current I
C
(mA)
0.5
50
20
5
2
1.0
10
Input Admittance vs. Collector Current
Input Admittance y
ie
(mS)
Y
ie
= g
ie
+ jb
ie
V
CE
= 6 V
f = 100 MHz
g
ie
b
ie
1.0
2
5
10
0.5
0.1
0.2
Collector Current I
C
(mA)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
Reverse Transfer Admittance vs.
Collector Current
Reverse Transfer Admittance y
re
(mS)
Y
re
= g
re
+ jb
re
V
CE
= 6 V
f = 100 MHz
g
re
b
re
10
2
0.5
5
1.0
0.1
0.2
Collector Current I
C
(mA)
1
100
50
20
10
5
2
Forward Transfer Admittance vs.
Collector Current
Forward Transfer Admittance y
fe
(mS)
Y
fe
= g
fe
+ jb
fe
V
CE
= 6 V
f = 100 MHz
b
fe
g
fe
0.1
0.2
0.5
1.0
10
5
2
Collector Current I
C
(mA)
0.05
5
2
1.0
0.5
0.2
0.1
Output Admittance vs. Collector Current
Output Admittance y
oe
(mS)
Y
oe
= g
oe
+ jb
oe
V
CE
= 6 V
f = 100 MHz
g
oe
b
oe
0.60 Max
0.45
0.1
4.8
0.3
3.8
0.3
5.0
0.2
0.7
2.3 Max
12.7 Min
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Unit: mm
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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