2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
5
A
Collector peak current
I
C(peak)
10
A
Base current
I
B
2.5
A
Collector power dissipation
P
C
*
1
40
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C.
2SC2613
2
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
V
CEO(sus)
400
--
--
V
I
C
= 0.2 A, R
BE
=
,
L = 100 mH
V
CEX(sus)
400
--
--
V
I
C
= 5 A, I
B1
= I
B2
= 1 A
V
BE
= 5 V, L = 180
H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
7
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
100
A
V
CB
= 400 V, I
E
= 0
I
CEO
--
--
100
A
V
CE
= 350 V, R
BE
=
DC current transfer ratio
h
FE1
15
--
--
V
CE
= 5 V, I
C
= 2.5 A*
1
h
FE2
7
--
--
V
CE
= 5 V, I
C
= 5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.0
V
I
C
= 2.5 A, I
B
= 0.5 A*
1
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 2.5 A, I
B
= 0.5 A*
1
Turn on time
t
on
--
--
1.0
s
I
C
= 5 A, I
B1
= I
B2
= 1 A,
Storage time
t
stg
--
1.2
2.5
s
V
CC
150 V
Fall time
t
f
--
--
1.0
s
Note:
1. Pulse test.
0
Case Temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50
100
150
20
60
40
0.01
0.1
1.0
100
10
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
1
3
10
30
100
300
1,000
Area of Safe Operation
I
C
(max)
(Continuous)
i
C
(peak)
Ta = 25
C, 1 Shot
25
s
250
s
50
s
1 ms
PW = 10 ms
DC Operation
(T
C
= 25
C)
2SC2613
3
20
40
60
80
100
Case temperature T
C
(
C)
Collector Current derating rate (%)
0
50
100
150
Collector Current Derating Rate
IS/B Limit Area
0.01
0.03
0.1
0.3
1.0
3
10
Time t
Thermal resistance
j-c
(
C/W)
0.01
0.1
1.0
10 (s)
0.01
0.1
1.0
10 (ms)
Transient Thermal Resistance
10 ms10 s
10
s10 ms
T
C
= 25
C
0
2
4
6
8
10
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
100
200
300
400
500
325 V, 10 A
400 V, 5 A
450 V, 1.0 A
Reverse Bias Area of Safe Operation
I
B2
= 1.0 A
300
400
500
600
Base to emitter resistance R
BE
(
)
Collector to emitter voltage V
CER
(V)
100
1 k
10 k
100 k
1 M
Collector to Emitter Voltage
vs. Base to Emitter Resistance
I
C
= 1 mA
2SC2613
4
Collector to emitter Voltage V
CE
(V)
Collector Current I
C
(A)
0
Typical Output Characteristics
1
2
3
4
5
1
2
3
4
5
T
C
= 25
C
I
B
= 0
0.05 A
0.1
0.2
0.3
0.5
0.4
Base to emitter voltage V
BE
(V)
Collector Current I
C
(A)
0
0.4
0.8
1.2
1.6
2.0
1
2
3
4
5
Typical Transfer Characteristics
T
C
= 25
C
V
CE
= 5 V
1
3
10
30
100
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01 0.03
0.1
0.3
1.0
3
10
DC Current Transfer Ratio vs.
Collector Current
V
CE
= 5 V
T
C
= 25
C
25
C
75
C
0.01
0.03
0.1
0.3
1.0
3
10
2 A
1 A
Base current I
B
(A)
Collector to emitter saturation voltage
V
CE (sat)
0.01 0.03
0.1
0.3
1.0
3
10
Collector to Emitter Saturation
Voltage vs. Base Current
T
C
= 25
C
I
C
= 0.5 A
2SC2613
5
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
Base to emitter saturation voltage
V
BE (sat)
0.01 0.03
0.1
0.3
1.0
3
10
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
= 5 I
B
T
C
= 25
C
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
Switching time t (
s)
0.01 0.03
0.1
0.3
1.0
3
10
Switching Time vs. Collector Current
t
on
t
f
t
stg
I
C
= 5 I
B1
=
5 I
B2
V
CC
150 V
=
.
.
0.05
0.1
0.2
0.5
1.0
2
5
Case temperature T
C
(
C)
Switching time t (
s)
0
25
50
75
100
125
Switching Time vs. Case Temperature
t
on
t
f
t
stg
I
C
= 5 A
I
B1
=
I
B2
=1 A
R
L
= 30
V
CC
150 V
=
.
.
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