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Электронный компонент: 2SC3380

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2SC3380
Silicon NPN Triple Diffused
Application
High frequency high voltage amplifier
High voltage switch
Outline
UPAK
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
4
1
2
3
2SC3380
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
1
1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value on the alumina ceramic board (12.5
20
0.7 mm)
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CEO
--
--
1
A
V
CE
= 250 V, R
BE
=
Collector to emitter saturation
voltage
V
CE(sat)
--
--
1.5
V
I
C
= 20 mA, I
B
= 2 mA
DC current transfer ratio
h
FE
30
--
200
V
CE
= 20 V, I
C
= 20 mA
Gain bandwidth product
f
T
--
80
--
MHz
V
CE
= 20 V, I
C
= 20 mA
Collector output capacitance
Cob
--
--
4
pF
V
CB
= 20 V, I
E
= 0, f = 1 MHz
Note:
Marking is "AS".
2SC3380
3
0
0.4
0.8
1.2
50
Ambient Temperature Ta (
C)
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
Maximum Collector Dissipation Curve
100
150
0
0.2
0.6
0.4
0.8
1.0
0.4
0.8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
1.2
1.6
2.0
I
B
= 0
2
A
4
8
9
10
12
14
0
10
30
20
40
50
0.2
0.4
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
V
CE
= 20 V
Ta = 25
C
10
30
100
1
3
10
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
30
100
Pulse
Ta = 25
C
V
CE
= 20 V
10 V
2SC3380
4
0.1
3
1.0
0.3
10
1
3
10
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
30
100
Pulse
I
C
= 10 I
B
Ta = 25
C
0
60
40
20
100
80
0.5
1.0
2
5
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
10
20
50
Pulse
V
CE
= 20 V
0.5
10
5
2
1.0
50
20
1
2
5
10
20
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
50
100
f = 1 MHz
I
E
= 0
4.5
0.1
1.8 Max
1.5
0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5
0.1
4.25 Max
0.8 Min
1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
UPAK
--
Conforms
0.050 g
Unit: mm