2SC5225
Silicon NPN Epitaxial Transistor
ADE-208-393
1st. Edition
Application
Wide band video output amplifier for color CRT monitor.
High frequency high voltage amplifier.
High speed power switching.
Complementary pair with 2SA1960.
Features
High voltage large current operation.
V
CEO
= 80 V, I
C
= 300 mA
High f
T
.
f
T
= 1.4 GHz
Small output capacitance.
Cob = 3 pF
2SC5225
2
Outline
1. Emitter
2. Collector
3. Base
TO-92 (1)
3
2
1
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
80
V
Emitter to base voltage
V
EBO
3
V
Collector current
I
C
300
mA
Collector power dissipation
P
C
625
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
2SC5225
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
--
--
V
I
C
= 100
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
--
--
V
I
C
= 1 mA, R
BE
=
Collector to base cutoff current
I
CBO
--
--
1
A
V
CB
= 80 V, I
E
= 0
Emitter to base cutoff current
I
EBO
--
--
10
A
V
EB
= 3 V, I
C
= 0
DC current transfer ratio
h
FE
20
70
--
V
CE
= 5 V, I
C
= 50 mA
Pulse test
Gain bandwidth product
f
T
1.2
1.4
--
GHz
V
CE
= 10 V, I
C
= 50 mA
Emitter input capacitance
Cib
--
13
19
pF
V
EB
= 0, I
C
= 0, f = 1 MHz
Collector output capacitance
Cob
--
3
4
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
1000
800
600
400
200
0
50
100
150
200
Ambient Temperature Ta (
C)
Collector Power Dissipation Pc (mW)
Collector Power Dissipation Curve
100
1
2
5
10 20
50 100 200 500
10
20
50
V = 5V
CE
Collector Current I (mA)
C
DS Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
2SC5225
4
500
200
100
20
50
10
1
2
5
10 20
50 100 200 500
I / I = 10
C
B
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
V (mV)
CE(sat)
Collector Current I (mA)
C
500
200
100
20
50
10
2
5
1
0.2
0.5
0.1
0
0.2
0.4
0.6
0.8
1.0
V = 5V
CE
Collector Current I (mA)
C
Collector Current vs.
Base to Emitter Voltage
Base to Emitter Voltage V (V)
BE
10
2
5
1
0.5
1
2
5
10
20
50
I = 0
f = 1 MHz
E
Collector Output Capacitance Cob (pF)
Collector to Base Voltage V (V)
CB
Collector Output Capacitance vs.
Collector to Base Voltage
0.5
20
10
5
2
1
2
5
I = 0
f = 1 MHz
C
Emitter Input Capacitance Cib (pF)
Emitter to Base Voltage V (V)
EB
Emitter Input Capacitance vs.
Emitter to Base Voltage
2SC5225
5
1.5
1.0
0.5
0
1
2
5
10
20
50
100
V = 10 V
CE
V = 5 V
CE
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
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