2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
High breakdown voltage
V
CBO
= 1500 V
High speed switching
t
f
= 0.2 sec (typ)
Isolated package
TO-3PFM (N)
Outline
1. Base
2. Collector
3. Emitter
TO-3PFM (N)
1
2
3
2SC5251
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1500
V
Collector to emitter voltage
V
CEO
800
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
12
A
Collector peak current
I
C(peak)
24
A
Collector power dissipation
P
C
*
1
50
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
800
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10 mA, I
C
= 0
Collector cutoff current
I
CES
--
--
500
A
V
CE
= 1500 V, R
BE
= 0
DC current transfer ratio
h
FE1
8
--
35
V
CE
= 5 V, I
C
= 1 A
DC current transfer ratio
h
FE2
5
--
9
V
CE
= 5 V, I
C
= 5 A
Collector to emitter saturation
voltage
V
CE(sat)
--
--
5
V
I
C
= 7 A, I
B
= 1.8 A
Base to emitter saturation
voltage
V
BE(sat)
--
--
1.5
V
I
C
= 7 A, I
B
= 1.8 A
Fall time
t
f
--
0.2
0.4
sec
I
CP
= 6 A, I
B1
= 1.5 A,
f
H
= 31.5 kHz
2SC5251
3
80
60
40
20
0
Collector Power Dissipation Pc (W)
50
100
150
200
Case Temperature Tc (
C)
Maximum Collector Power
Dissipation Curve
25
20
15
10
5
400
800
1200
1600
2000
Collector Current I (A)
C
Collector to Emitter Voltage V (V)
CE
0
Area of Safe Operation
(400 V, 24 A)
(600 V, 8 A)
(800 V, 3 A)
I = 1 A
L = 180
H
duty 1%
B2
(1500 V, 0.5mA)
<
10
5
0
5
10
Collector to Emitter Voltage V (V)
CE
Collector Current I (A)
C
Typical Output Characteristics
Pc = 50 W
B
I = 0
Tc = 25
C
2.0 A
1.8 A
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
0.2 A
2SC5251
4
0.1
0.2
0.5
1
2
5
10
1
5
2
10
20
50
100
DC Current Transfer Ratio h
FE
Collector Current I (A)
C
DC Current Transfer Ratio
vs. Collector Current
Tc = 25
C
25
C
75
C
V = 5 V
CE
0.1
0.2
0.5
1
2
5
10
0.05
Collector to Emitter Saturation Voltage
CE(sat)
V (V)
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
10
2
5
1
0.1
0.2
0.5
I / I = 4
C
B
Tc = 25
C
25
C
75
C
0.2
0.5
1
2
5
10
0.1
0.5
0.2
1
2
5
10
V (V)
BE(sat)
Base to Emitter Saturetion Voltage
Collector Current I (A)
C
Base to Emitter Saturation Voltage
vs. Collector Current
I / I = 4
C
B
Tc = 25
C
25
C
75
C
2SC5251
5
0.1
0.2
0.5
1
2
5
10
Base Current I (A)
B
10
5
0
Collector to Emitter Saturation Voltage
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
vs. Base Current
Tc = 25
C
6 A
8 A
I = 4 A
C
1.0
0.8
0.6
0.4
0.2
Fall Time t (
s)
f
Base Current I (A)
B1
0
Fall Time vs. Base Current
I = 6 A
f = 31.5 kHz
CP
H
0.4
0.8
1.2
1.6
2.0
10
8
6
4
2
Storage Time t (
s)
stg
Base Current I (A)
B1
0
Storage Time vs. Base Current
I = 6 A
f = 31.5 kHz
CP
H
0.4
0.8
1.2
1.6
2.0
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