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Электронный компонент: 2SC5545

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2SC5545
Silicon NPN Epitaxial
VHF / UHF wide band amplifier
ADE-208-746 (Z)
1st. Edition
Jan. 1999
Features
Excellent inter modulation characteristic
High power gain and low noise figure ;
PG=16dB typ. , NF=1.1dB typ. at f=900MHz
Outline
MPAK-4
1
4
3
2
1. Collector
2. Emitter
3. Base
4. Emitter
Note: Marking is
"
ZS-
"
.
2SC5545
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
6
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
Pc
150
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
--
--
V
I
C
= 10
A , I
E
= 0
Collector cutoff current
I
CBO
--
--
1
A
V
CB
= 12V , I
E
= 0
Collector cutoff current
I
CEO
--
--
1
mA
V
CE
= 6V , R
BE
=
Emitter cutoff current
I
EBO
--
--
10
A
V
EB
= 1.5V , I
C
= 0
DC current transfer ratio
h
FE
80
120
160
V
V
CE
= 3V , I
C
= 20mA
Collector output capacitance
Cob
--
0.69
1.1
pF
V
CB
= 3V , I
E
= 0
f = 1MHz
Gain bandwidth product
f
T
10
12.6
--
GHz
V
CE
= 3V , I
C
= 20mA
Power gain
PG
14
16
--
dB
V
CE
= 3V, I
C
= 20mA
f = 900MHz
Noise figure
NF
--
1.1
2.0
dB
V
CE
= 3V, I
C
= 5mA
f = 900MHz
2SC5545
3
Main Characteristics
200
150
100
50
0
50
100
150
200
10
0.1
1
10
1
2
5
10
20
50
100
0
4
8
12
16
20
100
200
0
1
20
100
Collector Power Dissipation Pc (mW)
Ambient Temperature Ta (
C)
Maximum Collector Dissipation Curve
Collector to Base Voltage V (V)
CB
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I (mA)
C
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector Current I (mA)
C
Gain Bandwidth Product f (GHz)
T
Gain Bandwidth Product vs.
Collector Current
2
5
50
V = 3 V
CE
0.4
0.8
1.2
1.6
2.0
0
0.2
0.5
2
5
V = 3 V
CE
I = 0
f = 1MHz
E
2SC5545
4
1
5
10
50
100
10
1
10
100
3
5
0
1
20
100
Power Gain PG (dB)
Power Gain vs. Collector Current
S parameter |S | (dB)
Collector Current I (mA)
C
Noise Figure NF (dB)
Noise Figure vs. Collector Current
2
5
50
4
8
12
16
20
0
2
5
20
50
0
4
8
12
16
20
Collector Current I (mA)
C
2
20
V = 3 V
CE
f = 900MHz
4
2
1
V = 3 V
CE
f = 900MHz
21
21
2
S Parameter vs. Collector Current
21
V = 3 V
CE
f = 1GHz
Collector Current I (mA)
C
2SC5545
5
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 10 / div.
0
30
60
90
120
150
180
150
90
60
30
120
Scale: 0.04 / div.
0
30
60
90
120
150
180
150
90
60
30
120
10
5
4
3
2
1.5
1
.8
2
3
4
5
10
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Condition :
100 to 2000 MHz (100 MHz step)
C
CE
V = 3 V , I = 20 mA
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
Condition :
100 to 2000 MHz (100 MHz step)
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
CE
V = 3 V , I = 20 mA
CE
V = 3 V , I = 20 mA
CE
V = 3 V , I = 20 mA
C
C
C