ChipFind - документация

Электронный компонент: 2SC5828

Скачать:  PDF   ZIP
2SC5828
Silicon NPN Epitaxial
VHF/UHF Wide band amplifier
ADE2081465(Z)
Rev.0
Nov. 2001
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
1. Emitter
2. Base
3. Collector
1
3
2
Note: Marking is "WX".
2SC5828
Rev.0, Nov. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
5.5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
80
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to +150
C
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
0.1
A
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
1
A
V
CE
= 5.5 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
0.1
A
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
100
120
150
V
CE
= 1 V, I
C
= 5 mA
Collector output capacitance
C
ob
0.85
1.15
pF
V
CB
= 1 V, I
E
= 0,
f = 1 MHz
Gain bandwidth product
f
T
2.5
5.5
GHz
V
CE
= 1 V, I
C
= 5 mA
Power gain
PG
11
14
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.0
1.7
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
2SC5828
Rev.0, Nov. 2001, page 3 of 10
100
80
60
40
20
0
50
100
150
200
250
Collector Power Dissipation P
C
(mW)
Ambient Temperature Ta (
C)
Collector Power Dissipation Curve
20
16
12
8
4
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
200
100
0
0.1
1.0
10
100
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
I
B
= 20
A
40
A
60
A
80 A
100 A
120 A
140 A
160
A
V
CE
= 1 V
V
CE
= 1 V
2SC5828
Rev.0, Nov. 2001, page 4 of 10
2.0
1.6
1.2
0.8
0.4
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage V
CB
(V)
Re
v
erse
T
r
ansf
er Capacitance C
re
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance vs.
Collector to Base Voltage
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
S
21
P
a
r
ameter |S
21
|
2
(dB)
Gain Bandwidth Product vs.
Collector Current
S
21
Parameter vs. Collector Current
V
CE
= 1 V
f = 1 GHz
V
CE
= 1 V
f = 1 GHz
I
E
= 0
f = 1 MHz
Emitter ground
f = 1 MHz
2SC5828
Rev.0, Nov. 2001, page 5 of 10
20
16
12
8
4
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
P
o
w
er Gain PG (dB)
5
4
3
2
1
0
1
2
5
10
20
50
100
Collector Current I
C
(mA)
Noise Figure NF (dB)
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
V
CE
= 1 V
f = 900 MHz
V
CE
= 1 V
f = 900 MHz
2SC5828
Rev.0, Nov. 2001, page 6 of 10
Scale: 8 / div.
S
11
Parameter vs. Frequency
S21 Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
Scale: 0.06 / div.
S
12
Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
S
22
Parameter vs. Frequency
Test conditions: V
CE
= 1 V , Z
O
= 50
100 to 2000 MHz (100 MHz step)
(I
C
= 5 mA)
(I
C
= 20 mA)
.2
.4
.6
1
2
5
10
5
3
2
1.5
10
5
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
4
4
3 4
.8
0
30
30
60
90
120
150
180
60
90
120
150
0
30
30
60
90
120
150
180
60
90
120
150
.2
.4
.6
1
2
5
10
5
3
2
1.5
10
5
3
2
1.5
1
.8
.6
.4
.2
0
.2
.4
.6
.8
1
1.5
4
4
3 4
.8
2SC5828
Rev.0, Nov. 2001, page 7 of 10
S Parameter
(V
CE
= 1 V, I
C
= 5 mA, Z
O
= 50
)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.819
34.8
15.22
156.8
0.031
71.2
0.921
20.6
200
0.732
64.9
12.81
138.1
0.054
59.1
0.776
35.1
300
0.671
88.2
10.54
124.7
0.067
51.3
0.642
45.0
400
0.609
105.1
8.65
115.3
0.076
47.5
0.542
50.6
500
0.588
118.9
7.31
107.9
0.082
46.5
0.471
54.7
600
0.563
129.1
6.28
102.6
0.087
46.1
0.417
57.0
700
0.549
137.5
5.47
97.8
0.091
46.3
0.379
58.8
800
0.541
143.8
4.87
93.6
0.096
47.6
0.350
60.2
900
0.529
149.7
4.40
90.2
0.101
48.8
0.329
61.8
1000
0.537
154.8
4.01
86.9
0.106
50.3
0.312
62.9
1100
0.522
159.4
3.67
84.1
0.111
51.7
0.300
64.0
1200
0.530
163.0
3.38
81.1
0.117
53.1
0.290
65.5
1300
0.523
166.5
3.15
79.0
0.121
53.8
0.281
66.9
1400
0.526
169.7
2.94
76.7
0.126
55.5
0.275
68.1
1500
0.533
172.4
2.77
74.1
0.133
56.8
0.269
69.5
1600
0.521
175.8
2.61
72.2
0.139
57.7
0.268
71.0
1700
0.532
177.9
2.46
70.2
0.145
59.0
0.264
72.7
1800
0.520
179.5
2.35
67.9
0.152
60.1
0.263
74.3
1900
0.530
177.6
2.23
66.0
0.158
60.8
0.261
76.0
2000
0.533
175.9
2.14
63.9
0.167
61.5
0.261
77.9
2SC5828
Rev.0, Nov. 2001, page 8 of 10
(V
CE
= 1 V, I
C
= 20 mA, Z
O
= 50
)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.496
81.4
34.91
134.4
0.022
62.9
0.680
47.1
200
0.455
121.9
22.12
114.3
0.033
59.6
0.438
67.3
300
0.446
139.6
15.54
104.5
0.042
62.4
0.316
77.8
400
0.433
151.0
11.90
98.8
0.050
65.0
0.251
84.4
500
0.438
158.4
9.60
94.4
0.060
67.5
0.213
89.4
600
0.434
163.6
8.04
91.2
0.070
68.8
0.187
93.5
700
0.440
168.3
6.91
88.4
0.079
70.0
0.170
96.6
800
0.439
170.7
6.05
85.7
0.089
70.8
0.159
100.0
900
0.437
175.1
6.45
83.6
0.099
70.9
0.152
103.1
1000
0.446
176.6
4.92
81.6
0.109
71.4
0.147
105.3
1100
0.444
179.5
4.48
79.3
0.120
71.5
0.143
107.8
1200
0.447
179.3
4.10
77.1
0.130
71.5
0.142
110.2
1300
0.441
177.3
3.83
75.7
0.139
71.1
0.140
112.5
1400
0.450
175.1
3.56
74.0
0.149
71.0
0.140
114.4
1500
0.456
174.1
3.34
72.0
0.159
70.9
0.141
116.2
1600
0.446
171.8
3.14
70.5
0.169
70.5
0.143
117.8
1700
0.462
169.9
2.96
68.8
0.179
70.3
0.145
119.4
1800
0.447
168.8
2.81
67.2
0.190
69.6
0.148
121.2
1900
0.458
166.4
2.68
65.8
0.198
69.5
0.150
122.7
2000
0.468
166.7
2.55
64.1
0.210
68.6
0.153
124.4
2SC5828
Rev.0, Nov. 2001, page 9 of 10
Package Dimensions
0.9 0.1
1.4 0.05
1.2 0.05
0.8 0.1
3-0.2
+0.1
0.05
0.2
0.2 0.45
0.45
(0.1)
(0.1)
0.6 MAX
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MFPAK
--
--
0.0016 g
0.15
+0.1
0.05
As of July, 2001
Unit: mm
2SC5828
Rev.0, Nov. 2001, page 10 of 10
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://semiconductor.hitachi.com.sg
URL
http://www.hitachisemiconductor.com/
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Hitachi Europe GmbH
Electronic Components Group
Dornacher Strae 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 5.0
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.