2SD1504
Silicon NPN Epitaxial
Application
Low frequency amplifier, Muting
Outline
1. Emitter
2. Collector
3. Base
SPAK
1
2
3
2SD1504
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
5
V
Collector current
I
C
0.5
A
Collector peak current
ic
(peak)
1.0
A
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
--
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
A
V
CB
= 20 V, I
E
= 0
DC current transfer ratio
h
FE
*
1
250
--
1200
V
CE
= 1 V, I
C
= 150 mA*
2
Base to emitter voltage
V
BE
--
0.65
--
V
V
CE
= 1 V, I
C
= 150 mA
Collector to emitter saturation
voltage
V
CE(sat)
--
0.15
0.5
V
I
C
= 500 mA, I
B
= 50 mA*
2
V
CE(sat)
--
0.018
--
V
I
C
= 30 mA, I
B
= 3 mA
Gain bandwidth product
f
T
--
300
--
MHz
V
CE
= 1 V, I
C
= 50 mA
On resistance
r
on
--
0.5
--
I
B
= 2 mA
Notes: 1. The 2SD1504 is grouped by h
FE
as follows.
2. Pulse test
D
E
F
250 to 500
400 to 800
600 to 1200
2SD1504
3
150
100
50
Ambient Temperature Ta (
C)
0
300
200
100
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
2
8
6
10
4
Collecter to Emitter Voltage V
CE
(V)
0
10
8
6
4
2
Typical Output Characteristics
Collector Current I
C
(mA)
15.0
12.5
10.0
7.5
5.0
I
B
= 2.5
A
0.2
0.8
0.6
1.0
0.4
Collector to Emitter Voltage V
CE
(V)
0
100
80
60
40
20
Typical Output Characteristics
Collector Current I
C
(mA)
160
140
120
100
80
60
40
IB = 20
A
1.0
0.2
0.4
0.6
0.8
Base to Emitter Voltage V
BE
(V)
0
10
6
4
2
8
Typical Transfer Characteristics
Collector Current I
C
(mA)
V
CE
= 1 V
2SD1504
4
1000
100
10
300
30
3
Collector current I
C
(mA)
1
1,000
300
100
30
10
3
1
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio h
FE
V
CE
= 1 V
Pulse
3
10
1,000
300
100
1
30
Collector Current I
C
(mA)
1,000
300
100
30
10
3
1
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
V
BE(sut)
I
C
/I
B
= 10
Pulse
V
CE(sat)
2
20
200
10
100
50
5
Collector Current I
C
(mA)
1,000
500
200
100
50
20
10
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
V
CE
= 1 V
100
30
10
3
1
Collector to Base Voltage V
CB
(V)
100
30
10
3
1
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
I
E
= 0
2SD1504
5
10
0.3
3
1.0
0.1
Base Current I
B
(mA)
10
3
1.0
0.3
0.1
On Resistance vs. Base Current
On Resistance r
on
(
)
IN
OUT
f = 10 kHz
3 k
3 k
I
B
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