2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
3
2
1
1. Emitter
2. Collector
3. Base
TO-92MOD
I
D
3
2
1
2SD1922
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
25
V
Emitter to base voltage
V
EBO
6
V
Collector current
I
C
0.8
A
Collector peak current
ic
(peak)
1.5
A
E to C diode forward current
I
D
0.8
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
25
--
35
V
I
C
= 1 mA, R
BE
=
Collector to emitter sustaining
voltage
V
CEO(sus)
25
--
35
V
I
C
= 0.8 A, R
BE
=
,
L = 20 mH
Emitter to base breakdown
voltage
V
(BR)EBO
6
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
0.2
A
V
CB
= 20 V, I
E
= 0
I
CEO
--
--
0.5
A
V
CE
= 20 V, R
BE
=
Emitter cutoff current
I
EBO
--
--
0.2
A
V
EB
= 5 V, I
C
= 0
DC current transfer ratio
h
FE
250
--
1200
V
CE
= 2 V, I
C
= 0.1 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
--
--
0.3
V
I
C
= 0.8 A, I
B
= 80 mA*
1
E to C diode forward voltage
V
D
--
--
1.1
V
I
D
= 0.8 A*
1
Note:
1. Pulse test
2SD1922
3
150
100
50
Ambient Temperature Ta (
C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(W)
1.0
0.3
30
10
100
3
0.1
Collector to Emitter Voltage V
CE
(V)
10
3
1.0
0.3
0.1
0.03
0.01
Area of Safe Operation
Collector Current I
C
(A)
i
C(peak)
1 ms
PW = 10 ms
DC Operation
I
C(max)
Ta = 25
C
1 Shot Pulse
1.0
10
0.3
3
0.1
Pulse Width P
W
(ms)
10
8
6
4
2
0
Diode Current I
D
(A)
Area of Safe Operation of Emitter to
Collector Diode
Ta = 25
C
1 Shot Pulse
10
6
4
8
2
Collector to Emitter Voltage V
CE
(V)
0
1.0
0.8
0.6
0.4
0.2
Typical Output Characteristics
Collector Current I
C
(A)
1.8 1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 mA
Ta = 25
I
B
= 0
2SD1922
4
0.8
1.6
2.0
0.4
1.2
Base to Emitter Voltage V
BE
(V)
0
1.0
0.8
0.6
0.4
0.2
Typical Transfer Characteristics
Collector Current I
C
(A)
V
CE
= 2 V
Ta = 25
C
Pulse
0.01
0.1
1.0
0.03
0.3
Collector Current I
C
(A)
3
1.0
0.3
0.1
0.03
0.01
0.003
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Saturation Voltage vs.Collector Current
I
C
= 10 I
B
Ta = 25
C
Pulse
V
CE(sat)
V
BE(sat)
0.001
1.0
0.01 0.03
0.1
0.003
0.3
Collector Current I
C
(A)
10,000
3,000
1,000
300
100
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs. Collector
Current
25
25
Ta = 75
C
V
CE
= 2 V
Pulse
0.4
0.8
1.2
1.6
2.0
E to C Diode Forward Voltage V
ECF
(V)
1.0
0.8
0.6
0.4
0.2
0
Diode Current I
D
(A)
Typical Characteristics of Emitter to
Collector Diode
Ta = 25
C
Pulse
2SD1922
5
3
0.3
10
1.0
30
Collector to Base Voltage V
CB
(V)
1,000
300
100
30
10
3
1
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
Ta = 25
C
f = 1MHz
I
E
= 0
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