2SD2122(L)/(S), 2SD2123(L)/(S)
2
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage
V
CBO
180
180
V
Collector to emitter voltage
V
CEO
120
160
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
1.5
1.5
A
Collector peak current
I
C(peak)
3
3
A
Collector power dissipation
P
C
*
1
18
18
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Note:
1. Value at T
C
= 25
C.
Electrical Characteristics (Ta = 25C)
2SD2122(L)/(S)
2SD2123(L)/(S)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
--
--
180
--
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
--
--
160
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
--
--
10
A
V
CB
= 160 V, I
E
= 0
DC current transfer ratio h
FE1
*
2
60
--
200
60
--
200
A
V
CE
= 5 V, I
C
= 150 mA*
1
h
FE2
30
--
--
30
--
--
V
CE
= 5 V, I
C
= 500 mA*
1
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1
--
--
1
V
I
C
= 500 mA,
I
B
= 50 mA*
1
Base to emitter voltage
V
BE
--
--
1.5
--
--
1.5
V
V
CE
= 5 V, I
C
= 150 mA*
1
Gain bandwidth product f
T
--
180
--
--
180
--
MHz
V
CE
= 5 V, I
C
= 150 mA*
1
Collector output
capacitance
Cob
--
14
--
--
14
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
Cautions
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Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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