ChipFind - документация

Электронный компонент: 2SD476

Скачать:  PDF   ZIP
2SD476(K), 2SD476A(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB566(K) and 2SB566A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SD476(K)
2SD476A(K)
Unit
Collector to base voltage
V
CBO
70
70
V
Collector to emitter voltage
V
CEO
50
60
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
4
4
A
Collector peak current
I
C(peak)
8
8
A
Collector power dissipation
P
C
*
1
40
40
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Note:
1. Value at T
C
= 25
C
2SD476(K), 2SD476A(K)
2
Electrical Characteristics (Ta = 25C)
2SD476(K)
2SD476A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70
--
--
70
--
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50
--
--
60
--
--
V
I
C
= 50 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
1
--
--
1
A
V
CB
= 50 V, I
E
= 0
DC current transfer ratio h
FE1
60
--
200
60
--
200
V
CE
= 4 V, I
C
= 1 A
(Pulse test)
h
FE2
35
--
--
35
--
--
V
CE
= 4 V, I
C
= 0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1.0
--
--
1.0
V
I
C
= 2 A, I
B
= 0.2 A
Base to emitter
saturation voltage
V
BE(sat)
--
--
1.2
--
--
1.2
V
Gain bandwidth product f
T
--
7
--
--
7
--
MHz
V
CE
= 4 V, I
C
= 0.5 A
Turn on time
t
on
--
0.3
--
--
0.3
--
s
V
CC
= 10.5 V
Turn off time
t
off
--
3.0
--
--
3.0
--
s
I
C
= 10 I
B1
= 10 I
B2
=
Storage time
t
stg
--
2.5
--
--
2.5
--
s
0.5 A
Note:
1. The 2SD476(K) and 2SD476A(K) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
0
50
100
150
Case temperature T
C
(
C)
Collector power dissipation Pc (W)
20
60
40
Maximum Collector Dissipation Curve
0.1
0.2
0.5
1.0
2
5
10
(10 V, 4 A)
(20 V, 2 A)
(50 V, 0.22 A)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
1
2
5
10
20
50
100
Area of Safe Operation
DC
Operation
I
C
max
T
C
= 25
C
P
C
= 40 W
2SD476 K
2SD476A
(60 V, 0.15 A)
K
2SD476(K), 2SD476A(K)
3
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
0
2
4
6
8
10
Typical Output Characteristics
1
2
3
4
5
T
C
= 25
C
I
B
= 0
10 mA
20
50
60
70
80
90
30
40
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
Base to emitter voltage V
BE
(V)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector current I
C
(A)
Typical Transfer Characteristics
V
CE
= 4 V
T
C
= 75
C
25
C
25
C
5
10
20
50
200
500
1,000
100
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01 0.02
0.05 0.1 0.2
0.5 1.0
2
5
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 4 V
T
C
= 75
C
25
25
5
0.2
0.4
0.6
1.0
1.2
1.4
0.8
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE
(sat)
(V)
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2
5
Collector to Emitter Saturation Voltage
vs. Collector Current
l
C
= 10 l
B
T
C
= 75
C
25
25
0.5
0.1
2.54
0.5
0.76
0.1
14.0
0.5
15.0
0.3
2.79
0.2
18.5
0.5
7.8
0.5
10.16
0.2
2.54
0.5
1.26
0.15
4.44
0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
0.1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong)
: http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: