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Электронный компонент: 2SH11

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Application
High speed power switching
Features
High speed switching
Low on saturation voltage
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Collector to emitter voltage
V
CES
600
V
--------------------------------------------------------------------------------------
Gate to emitter voltage
V
GES
20
V
--------------------------------------------------------------------------------------
Collector current
I
C
10
A
--------------------------------------------------------------------------------------
Collector peak current
ic(peak)
20
A
--------------------------------------------------------------------------------------
Collector dissipation
P
C
*
50
W
--------------------------------------------------------------------------------------
Channel temperature
T
j
150
C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
C
--------------------------------------------------------------------------------------
* Value at Tc = 25C
1
2
3
TO220AB
1
2
3
1. Gate
2. Collector
3. Emitter
1
2SH11
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE208274 (Z)
Table 2 Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
--------------------------------------------------------------------------------------
Collector to emitter breakdown
V
(BR)CES
600
--
--
V
I
C
= 100 A, V
GE
= 0
voltage
--------------------------------------------------------------------------------------
Zero gate voltage collector
I
CES
--
--
0.5
mA
V
CE
= 600 V, V
GE
= 0
current
--------------------------------------------------------------------------------------
Gate to emitter leak current
I
GES
--
--
1
A
V
GE
= 20 V, V
CE
= 0
--------------------------------------------------------------------------------------
Gate to emitter cutoff current
V
GE(off)
3.0
--
5.0
V
I
C
= 1 mA, VCE = 10 V
--------------------------------------------------------------------------------------
Collector to emitter saturation
V
CE(sat)
1
--
2.0
--
V
I
C
= 5 A, V
GE
= 15 V
voltage
--------------------------------------------------------------------------------------
Collector to emitter saturation
V
CE(sat)
2
--
2.6
3.3
V
I
C
= 10 A, V
GE
= 15 V
voltage
--------------------------------------------------------------------------------------
Input capacitance
Cies
--
1000
--
pF
V
CE
= 10 V, V
GE
= 0,
f = 1 MHz
--------------------------------------------------------------------------------------
Switching time
t
r
--
75 --
ns
IC = 10 A,
--------------------------------
t
on
--
150
--
RL = 30
,
--------------------------------
t
f
--
300
600
VGE = 15 V
--------------------------------
t
off
--
450
900
Rg = 50
--------------------------------------------------------------------------------------
2
2SH11
200
80
60
40
20
0
Collector Dissipation Pc (W)
50
100
150
Case Temperature Tc (C)
Power vs. Temperature Derating
0
200
400
600
800
100
10
1
0.01
0.1
Tc = 25 C
Collector Current I (A)
Collector to Emitter Voltage V (V)
CE
C
Reverse Bias SOA
20
16
12
8
4
0
4
2
6
8
10
Collector to Emitter Voltage V (V)
CE
Collector Current I (A)
C
V = 15 V
GE
12 V
10 V
8 V
6 V
Pulse Test
Ta = 25 C
Typical Output Characteristics
100
10
1
0.1
0.01
1
10
100
1000
Collector to Emitter Voltage V (V)
CE
C
Collector Current I (A)
Ta = 25 C
DC Operation
(Tc = 25 C)
1 ms
PW = 10 ms(1 shot)
100 s
Maximum Safe Operation Area
3
2SH11
20
16
12
8
4
Collector Current I (A)
C
0
4
8
12
16
20
Gate to Emitter Voltage V (V)
GE
Tc = 25 C
25 C
75 C
Pulse Test
V = 10 V
CE
Typical Transfer Characteristics
50
20
10
5
2
1
0.5
1
2
5
10
20
Collector Current I (A)
C
Collector to Emitter Saturation Voltage
V (V)
CE(sat)
Pulse Test
V = 15 V
GE
Tc =75 C
25 C
25 C
Collector to Emitter Saturation Voltage
vs. Collector Current
10000
1000
100
10
0
10
20
30
40
50
Collector to Emitter Voltage V (V)
CE
Capacitance C (pF)
Cies
Coes
Cres
V = 0
f = 1 MHz
GE
Typical Capacitance vs.
Collector to Emitter Voltage
10
8
6
4
2
Collector to Emitter Saturation Voltage
CE(sat)
0
4
8
12
16
20
Gate to Emitter Voltage V (V)
GE
I = 10 A
5 A
3 A
V (V)
C
Pulse Test
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
4
2SH11
500
400
300
200
100
0
16
24
32
40
Gate Charge Qg (nc)
Collector to Emitter Voltage V (V)
CE
20
16
12
8
4
0
Gate to Emitter Voltage V (V)
GE
V = 400 V
300 V
200 V
CC
V = 400 V
300 V
200 V
CC
V
CE
V
GE
I = 10 A
C
8
Dynamic Input Characteristics
1000
100
200
500
50
20
10
5
10
50
100
500
Gate Resistance Rg ( )
Switching Time t (ns)
tf
td(on)
tr
td(off)
C
L
GE
I = 10 A
R = 30
V = 15 V
Switching Characteristics
2000
1000
500
200
100
50
20
25
0
25
50
75
100
125
Case Temperature Tc (C)
Switching Time t (ns)
tf
td(off)
td(on)
tr
C
L
GE
I = 10 A
R = 30
V = 15 V
Rg = 50
Switching Characteristics
1000
100
200
500
50
20
10
0.2
1
2
10
20
Collector Current I (A)
C
Switching Time t (ns)
tf
td(on)
tr
td(off)
V = 300 V
V = 15 V
Rg = 50
Tc = 25 C
CC
GE
0.5
5
Switching Characteristics
5
2SH11
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m
1
10
s (t)
CM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 2.5 C/W, Tc = 25 C

D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
6
2SH11
11.5 max
9.8 max
7.6 min
4.8 max
1.5 max
0.5
2.7 max
1.5 max
0.76 0.1
2.5 0.5
5.1 0.5
6.3 min
15.3 max
12.7 min
1.27
3.0max
18.5 0.5
7.8 0.5
3.6
+ 0.1
0.08
f
Hitachi Code
EIAJ
JEDEC
TO220AB
SC46
--
TO220AB
Package Dimensions
Unit : mm
7
2SH11
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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5. This product is not designed to be radiation resistant.
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