2SH31
4
Gate to Emitter Voltage V (V)
GE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
Collecot to Emitter Saturation Voltage
vs. Collector Current
Gate to Emitter Voltage V (V)
GE
Collector Current I (A)
C
Typical Transfer Characteristics
Capacitance C (pF)
Collector to Emitter Voltage V (V)
CE
Typical Capacitance vs.
Collecotor to Emitter Voltage
Collector Current I (A)
C
V (V)
CE(sat)
Collector to Emitter Saturation Voltage
5
4
3
2
1
0
4
8
12
16
20
100
80
60
40
20
0
4
8
12
16
20
50 A
25 A
I = 75 A
C
Tc = 75C
25C
25C
V = 10 V
Pulse Test
CE
Pulse Test
0
10
20
30
40
50
100000
10000
30000
3000
1000
100
300
50
V = 0
f = 1 MHz
GE
Cies
Coes
Cres
1
5
20
100
2
10
50
2
1
0.5
0.2
10
5
Tc = 75C
25C
25C
V = 15 V
Pulse Test
GE
2SH31
5
Gate Charge Qg (nc)
Collector to Emitter Voltage V (V)
CE
Gate to Emitter Voltage V (V)
GE
Dynamic Input Characteristics
Collector Current I (A)
C
Switching Time t (ns)
Switching Characteristics
Gate Resistance Rg ( )
Switching Time t (ns)
Switching Characteristics
Case Temperature Tc (C)
Switching Time t (ns)
Switching Characteristics
1000
800
600
400
200
0
20
16
12
8
4
80
160
240
320
400
0
1000
200
500
100
20
10
50
1
2
5
10
V = 200 V
300 V
400 V
CC
V = 400 V
300 V
200 V
CC
I = 75 A
C
V
CE
V
GE
20
50
100
t f
r
t
d(on)
t
d(off)
t
V = 300V, V = 15 V
Rg = 50 , Ta = 25C
CC
GE
10000
1000
3000
300
30
10
100
1000
200
500
100
20
10
50
25
50
75
100
125
t f
r
t
d(on)
t
d(off)
t
GE
I = 75 A, R = 4
V = 15 V, Rg = 50
C
L
1
3
10
30
100
300
1000
t f
r
t
d(on)
t
d(off)
t
GE
I = 75 A, R = 4
V = 15 V
C
L
2SH31
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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URL
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: http://www.hitachi.co.jp/Sicd/indx.htm
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