2SJ130(L), 2SJ130(S)
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
300
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
1
A
Drain peak current
I
D(pulse)
2
A
Body to drain diode reverse drain current
I
DR
1
A
Channel dissipation
Pch*
1
20
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Note:
1. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
300
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
100
A
V
DS
= 240 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
4.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
6.0
8.5
I
D
= 0.5 A, V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
0.25
0.4
--
S
I
D
= 0.5 A, V
DS
= 20 V*
1
Input capacitance
Ciss
--
235
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
65
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
16
--
pF
Turn-on delay time
t
d(on)
--
10
--
ns
I
D
= 0.5 A, V
GS
= 10 V,
Rise time
t
r
--
25
--
ns
R
L
= 60
Turn-off delay time
t
d(off)
--
35
--
ns
Fall time
t
f
--
45
--
ns
Body to drain diode forward
voltage
V
DF
--
0.9
--
V
I
F
= 1 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
200
--
ns
I
F
= 1 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note:
1. Pulse test
2SJ130(L), 2SJ130(S)
4
20
8
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
16
4
4
12
16
0
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
I
D
= 2 A
Pulse Test
0.5 A
50
0.2
5
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
20
1.0
0.1
0.5
2
0.05
5
10
Static Drain to Source on State
Resistance vs. Drain Current
2
0.5
1.0
15 V
V
GS
= 10 V
Pulse Test
20
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
16
4
0
8
0
120
0
8
12
Static Drain to Source on State
Resistance vs. Temperature
I
D
= 2 A
V
GS
= 10 V
Pulse Test
40
1 A
0.5 A
5
0.05
2
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
2
0.2
0.02
0.1
0.5
0.05
0.5
1.0
Forward Transfer Admittance
vs. Drain Current
V
DS
= 20 V
Pulse Test
0.1
0.2
1.0
75C
25C
Ta = 25C
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
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