2SJ221
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)
*
1
80
A
Body to drain diode reverse drain current
I
DR
20
A
Channel dissipation
Pch*
2
75
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at T
C
= 25
C
Electrical Characteristics (Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
20
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
16 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 80 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
R
DS(on)
--
0.12
0.16
I
D
= 10 A, V
GS
= 10 V*
1
resistance
--
0.16
0.22
I
D
= 10 A, V
GS
= 4 V*
1
Forward transfer admittance
|y
fs
|
7.5
12
--
S
I
D
= 10 A, V
DS
= 10 V*
1
Input capacitance
Ciss
--
1800
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
680
--
pF
f = 1 MHz
Reverse transfer capacitance
Crss
--
145
--
pF
Turn-on delay time
t
d(on)
--
15
--
ns
I
D
= 10 A, V
GS
= 10 V,
Rise time
t
r
--
115
--
ns
R
L
= 3
Turn-off delay time
t
d(off)
--
320
--
ns
Fall time
t
f
--
170
--
ns
Body to drain diode forward
voltage
V
DF
--
1.05
--
V
I
F
= 20 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
280
--
ns
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 50 A/
s
Note:
1. Pulse test
2SJ221
4
10
8
20
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
4
12
16
0
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20 A
10 A
I
D
= 5 A
Pulse Test
5
100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.1
Static Drain to Source on State
Resistance vs. Drain Current
3
1
0.3
0.1
0.03
0.01
0.005
0.3
1
3
10
30
Pulse Test
V
GS
= 4 V
10 V
1.0
40
160
Case Temperature T
C
(C)
Static Drain to Source on State Resistance
R
DS (on)
(
)
0.8
0.2
0
80
120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Case Temperature
40
I
D
= 20 A
5, 10 A
V
GS
= 4 V
V
GS
= 10 V
5, 10 A
20 A
Pulse Test
100
100
Drain Current I
D
(A)
Forward Transfer Admittance
yfs
(S)
Forward Transfer Admittance
vs. Drain Current
0.1
30
10
3
1
0.3
0.5
0.3
1
3
10
30
V
DS
= 10 V
Pulse Test
25C
75C
T
C
= 25C
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