ChipFind - документация

Электронный компонент: 2SJ246L

Скачать:  PDF   ZIP
Application
High speed power switching
Features
Low onresistance
High speed switching
Low drive current
4V gate drive device can be driven from
5V source.
Suitable for Switching regulator, DC DC
converter
1
2, 4
3
DPAK1
3
2
1
4
1 2
4
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
--------------------------------------------------------------------------------------
Drain to source voltage
V
DSS
30
V
--------------------------------------------------------------------------------------
Gate to source voltage
V
GSS
20
V
--------------------------------------------------------------------------------------
Drain current
I
D
7
A
--------------------------------------------------------------------------------------
Drain peak current
I
D(pulse)
*
28
A
--------------------------------------------------------------------------------------
Bodydrain diode reverse drain current
I
DR
7
A
--------------------------------------------------------------------------------------
Channel dissipation
Pch**
20
W
--------------------------------------------------------------------------------------
Channel temperature
Tch
150
C
--------------------------------------------------------------------------------------
Storage temperature
Tstg
55 to +150
C
--------------------------------------------------------------------------------------
*
PW
10 s, duty cycle
1 %
**
Value at Tc = 25 C
2SJ246
L
, 2SJ246
S
SILICON P-CHANNEL MOS FET
Table 2 Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
--------------------------------------------------------------------------------------
Drain to source breakdown
V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source breakdown
V
(BR)GSS
20
--
--
V
I
G
= 100 A, V
DS
= 0
voltage
--------------------------------------------------------------------------------------
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16 V, V
DS
= 0
--------------------------------------------------------------------------------------
Zero gate voltage drain current
I
DSS
--
--
100
A
V
DS
= 25 V, V
GS
= 0
--------------------------------------------------------------------------------------
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
V
DS
= 10 V, ID = 1 mA
--------------------------------------------------------------------------------------
Static drain to source on state
R
DS(on)
--
0.12
0.17
I
D
= 4 A
resistance
V
GS
= 10 V
------------------------------------------------
--
0.21
0.31
I
D
= 4 A
V
GS
= 4 V
--------------------------------------------------------------------------------------
Forward transfer admittance
|y
fs
|
3.0
5.0
--
S
V
DS
= 10 V
I
D
= 4 A
--------------------------------------------------------------------------------------
Input capacitance
Ciss
--
660
--
pF
V
DS
= 10 V
----------------------------------------------------------------
Output capacitance
Coss
--
465
--
pF
V
GS
= 0
----------------------------------------------------------------
Reverse transfer capacitance
Crss
--
180
--
pF
f = 1 MHz
--------------------------------------------------------------------------------------
Turnon delay time
t
d(on)
--
10
--
ns
V
GS
= 10 V
----------------------------------------------------------------
Rise time
t
r
--
55
--
ns
I
D
= 4 V
----------------------------------------------------------------
Turnoff delay time
t
d(off)
--
135
--
ns
R
L
= 7.5
----------------------------------------------------------------
Fall time
t
f
--
135
--
ns
--------------------------------------------------------------------------------------
Bodydrain diode forward
V
DF
--
1.2
--
V
I
F
= 7 A, V
GS
= 0
voltage
--------------------------------------------------------------------------------------
Bodydrain diode reverse
t
rr
--
90
--
s
IF = 7 A, V
GS
= 0,
recovery time
di
F
/ dt = 50 A / s
--------------------------------------------------------------------------------------
2SJ246 L , 2SJ246 S
40
30
20
10
0
50
100
150
200
Case Temperature Tc (C)
Power Dissipation Pch (W)
Power vs. Temperature Derating
50
30
10
3
1
0.3
0.1
0.3
1
3
10
30 50
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
DC Operation (Tc = 25C)
10s
100s
PW = 10ms (1 shot)
1 ms
Operation in this area is
limited by R
DS(on)
Ta = 25C
Maximum Safe Operation Area
10
8
6
4
2
0
2
4
6
8
10
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
3 V
V = 2.5 V
GS
3.5 V
Pulse test
4 V
5 V
10V
6 V
Typical Output Characteristics
10
8
6
4
2
0
1
2
3
4
5
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 10 V
DS
75C
Pulse test
25C
Tc = 25C
Typical Transfer Characteristics
2SJ246 L , 2SJ246 S
2.0
1.6
1.2
0.8
0.4
0
2
4
6
8
10
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
DS(on)
I = 5 A
D
Pulse test
V (V)
2 A
1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1
0.5
0.2
0.1
0.05
0.1
1
10
100
Drain Current I (A)
D
Static Drain to Source on State Resistance
R (on) ( )
DS
Pulse test
10 V
V = 4 V
GS
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
40
0
40
80
120
160
Case Temperature Tc (C)
R (on) ( )
DS
I = 5 A
D
Pulse test
0
Static Drain to Source on State Resistance
1 A
V = 4 V
GS
10 V
1 A, 2 A
5 A
2 A
Static Drain to Source on State
Resistance vs. Temperature
10
5
2
1
0.5
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
D
|y | (S)
fs
Pusle test
V = 10 V
DS
Tc = 25C
25C
75C
Forward Transfer Admittance
Forward Transfer Admittance vs.
Drain Current
2SJ246 L , 2SJ246 S
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I (A)
DR
Reverse Recovery Time t (ns)
di/dt = 50 A/s, Ta = 25C
V = 0, Pulse test
GS
Body to Drain Diode Reverse
Recovery Time
rr
10000
5000
2000
1000
500
200
100
0
10
20
30
40
50
Drain to Source Voltage V (V)
DS
Capacitance C (pF)
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
Typical Capacitance vs. Drain to
Source Voltage
0
20
40
60
80
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
V = 25 V
10 V
DD
0
4
8
12
16
20
100
V
GS
V
DS
I = 7 A
D
V = 10 V
25 V
DD
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
500
200
100
50
20
10
5
0.1 0.2
0.5
1
2
5
10
Drain Current I (A)
D
Switching Time t (ns)
V = 10 V, PW = 2 s,
V = 30 V, duty 1 %
GS
DD
td(on)
td(off)
tf
tr
Switching Characteristics
<
=
:
2SJ246 L , 2SJ246 S
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Pulse test
5 V
10 V
0
V = 0, 5 V
GS
Reverse Drain Current vs. Source to
Drain Voltage
2SJ246 L , 2SJ246 S
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
Pulse Width PW (s)
Normalized Transient Thermal Impedance
100 m
1
10
s (t)
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 6.25 C/W, Tc = 25 C

D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25C
Normal Transient Thermal Impedance vs. Pulse Width
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
t
t (on)
Vin
90%
90%
10%
10%
Vout
t (off)
Vout
Monitor
50
90%
10%
t
f
r
Switching Time Test Circuit Waveform
d
d
.
.
2SJ246 L , 2SJ246 S